High-sensitivity hybrid PbSe/ITZO thin film-based phototransistor detecting from 2100 nm to 2500 nm near-infrared illumination

We report that high absorption PbSe colloidal quantum dots (QDs) having a peak absorbance beyond 2100 nm were synthesized and incorporated into InSnZnO (ITZO) channel layer-based thin film transistors (TFTs). It was intended that PbSe QDs with proportionally less photocurrent modulation can be remedied by semiconducting and low off-current ITZO-based TFT configuration. Multiple deposition scheme of PbSe QDs on ITZO metal oxide thin film gave rise to nearly linear increase of film thickness with acceptably uniform and smooth surface (less than 10 nm). Hybrid PbSe/ITZO thin film-based phototransistor exhibited the best performance of near infrared (NIR) detection in terms of response time, sensitivity and detectivity as high as 0.38 s, 3.91 and 4.55 × 107 Jones at room temperature, respectively. This is indebted mainly from the effective diffusion of photogenerated carrier from the PbSe surface to ITZO channel layer as well as from the conduction band alignment between them. Therefore, we believe that our hybrid PbSe/ITZO material platform can be widely used to be in favour of incorporation of solution-processed colloidal light absorbing material into the high-performance metal oxide thin film transistor configuration.

Microvalve with Trapezoid-Shaped Cross-Section for Deep Microchannels

Simple microfluidic systems for handling large particles such as three-dimensional (3D) cultured cells, microcapsules, and animalcules have contributed to the advancement of biology. However, obtaining a highly integrated microfluidic device for handling large particles is difficult because there are no suitable microvalves for deep microchannels. Therefore, this study proposes a microvalve with a trapezoid-shaped cross-section to close a deep microchannel. The proposed microvalve can close a 350 μm deep microchannel, which is suitable for handling hundreds of micrometer-scale particles. A double-inclined lithography process was used to fabricate the trapezoid-shaped cross-section. The microvalve was fabricated by bonding three polydimethylsiloxane layers: a trapezoid-shaped liquid channel layer, a membrane, and a pneumatic channel layer. The pneumatic balloon, consisting of the membrane and the pneumatic channel, was located beneath a trapezoid-shaped cross-section microchannel. The valve was operated by the application of pneumatic pressure to the pneumatic channel. We experimentally confirmed that the expansion of the pneumatic balloon could close the 350 μm deep microchannel.

Effective modulation of spin accumulation using a ferromagnetic/nonmagnetic bilayer spin channel

A lateral spin valve consisting of highly spin-polarized CoFeAl electrodes with a CoFeAl/Cu bilayer spin channel has been developed. Despite a large spin absorption into the CoFeAl capping channel layer, an efficient spin injection and detection using the CoFeAl electrodes enable us to observe a clear spin valve signal. We demonstrate that the nonlocal spin accumulation signal is significantly modulated depending on the relative angle of the magnetizations between the spin injector and absorber. The observed modulation phenomena is explained by the longitudinal and transverse spin absorption effects into the CoFeAl channel layer with the spin resistance model.

A Novel Step–Doped Channel AlGaN/GaN HEMTs with Improved Breakdown Performance

The AlGaN/GaN high electron mobility transistor with a step–doped channel (SDC–HEMT) is first proposed in this paper. The potential distribution and the electric field (E–field) distribution of the device are explored by the numerical approach and analytical approach simultaneously. By introducing extra dopants to the channel layer, the E–field distribution along the AlGaN/GaN heterojunction interface is reshaped, resulting in an improved breakdown characteristic. An optimized doping concentration gradient of channel layer of 2 × 1016 cm−3/step is proposed and verified by simulations. The breakdown voltage (BV) of the optimized SDC–HEMT reaches 1486 V with a 59.8% improvement compared with conventional AlGaN/GaN HEMT. In addition, the average E–field in the region between gate and drain improves from 1.5 to 2.5 MV/cm. Based on the equivalent potential method (EPM), an analytical model of the E–field and potential distribution is presented. The veracity and effectiveness of the proposed methodology is verified by the good agreement between the simulated and modeled results.

Effects of Oxygen Content on Operational Characteristics and Stability of High-Mobility IGTO Thin-Film Transistors during Channel Layer Deposition

In this study, we investigated the effects of oxygen content on the transfer characteristics and stability of high-mobility indium-gallium-tin oxide (IGTO) thin-film transistors (TFTs) during channel layer deposition. The IGTO thin films were deposited through direct current sputtering at different ambient oxygen percentages of 10%, 20%, 30%, 40%, and 50%. The experimental results indicate that the drain currents were hardly modulated by the gate-to-source voltage in the IGTO TFT prepared at 10% ambient oxygen. However, as the oxygen content increased from 20% to 50%, the transfer curves shifted to the positive direction with a decrease in field-effect mobility (μFE). The IGTO TFTs exhibited deteriorated positive bias stress (PBS) stability as the oxygen content increased. However, the stabilities of the IGTO TFTs under negative bias illumination stress (NBIS) improved with an increase in the ambient oxygen percentage during the channel layer deposition. Furthermore, to understand the mechanism of the observed phenomena, we performed X-ray photoelectron spectroscopy (XPS) analysis of the IGTO thin films prepared at different oxygen percentages. The XPS results demonstrate that the deteriorated PBS stability and enhanced NBIS stability of the IGTO TFTs prepared at higher oxygen percentages were mainly ascribed to the larger amount of oxygen interstitials resulting from the excess oxygen and the smaller number of oxygen vacancies within the IGTO, respectively. The obtained results suggest that the oxygen percentages of 30% in the sputtering ambient is the most suitable oxygen percentage for optimizing the electrical properties (μFE = 24.2 cm2/V·s, subthreshold swing = 0.43 V/dec, and threshold voltage = −2.2 V) and adequate PBS and NBIS stabilities of IGTO TFTs.

Presence of interplate channel layer controls of slip during and after the 2011 Tohoku-Oki earthquake through the frictional characteristics

There are significant differences between the middle and southern segments of the Japan Trench in terms of the seismic and aseismic slips on the plate interface and seismic velocity structures. Although the large coseismic slip of the 2011 Tohoku-Oki earthquake was limited to the middle segment, the observed negative residual gravity anomaly area in the southern segment corresponds to the postseismic slip area of the Tohoku-Oki earthquake. A density distribution model can explain the different slip behaviours of the two segments by considering their structural differences. The model indicates that the plate interface in the south was covered with a thick channel layer, as indicated by seismic survey imaging, and this layer resulted in a residual gravity anomaly. Numerical simulations which assumed evident frictional heterogeneity caused by the layer in the south efficiently reproduced M9 earthquakes recurring only in the middle, followed by evident postseismic slips in the south. This study proposes that although the layer makes the megathrust less compliant to seismic slip, it promotes aseismic slips following the growth of seismic slips on the fault in an adjacent region.

A Facile and Rapid Route to Self-Digitization of Samples into a High Density Microwell Array for Digital Bioassays

ABSTRACTDigital bioassays are powerful methods to detect rare analytes from complex mixtures and study the temporal processes of individual entities within biological systems. In digital bioassays, a crucial first step is the discretization of samples into a large number of identical independent partitions. Here, we developed a rapid and facile sample partitioning method for versatile digital bioassays. This method is based on a detachable self-digitization (DSD) chip which couples a reversible assembly configuration and a predegassing-based self-pumping mechanism to achieve an easy, fast and large-scale sample partitioning. The DSD chip consists of a channel layer used for loading sample and a microwell layer used for holding the sample partitions. Benefitting from its detachability, the chip avoids a lengthy oil flushing process used to remove the excess sample in loading channels and can compartmentalize a sample into more than 100,000 wells of picoliter volume with densities up to 14,000 wells/cm2 in less than 30 s. We also demonstrated the utility of the proposed method by applying it to digital PCR and digital microbial assays.

Influence of Active Channel Layer Thickness on SnO2 Thin-Film Transistor Performance

Sol-gel processed SnO2 thin-film transistors (TFTs) were fabricated on SiO2/p+ Si substrates. The SnO2 active channel layer was deposited by the sol-gel spin coating method. Precursor concentration influenced the film thickness and surface roughness. As the concentration of the precursor was increased, the deposited films were thicker and smoother. The device performance was influenced by the thickness and roughness of the SnO2 active channel layer. Decreased precursor concentration resulted in a fabricated device with lower field-effect mobility, larger subthreshold swing (SS), and increased threshold voltage (Vth), originating from the lower free carrier concentration and increase in trap sites. The fabricated SnO2 TFTs, with an optimized 0.030 M precursor, had a field-effect mobility of 9.38 cm2/Vs, an SS of 1.99, an Ion/Ioff value of ~4.0 × 107, and showed enhancement mode operation and positive Vth, equal to 9.83 V.