Characterization of Silicon Oxide Films Deposited from a Permanent-Magnet Helicon Plasma Source

2011 ◽  
Vol 8 (8) ◽  
pp. 750-754 ◽  
Author(s):  
Der-Jun Jan ◽  
Chiang-Yao Tang ◽  
Chi-Fong Ai
Keyword(s):  
Permanent Magnet ◽  
Silicon Oxide ◽  
Oxide Films ◽  
Plasma Source ◽  
Helicon Plasma

scholarly journals Characterization of hydrogen plasma in a permanent ring magnet based helicon plasma source for negative ion source research

2019 ◽  
Vol 61 (6) ◽  
pp. 065003 ◽  
Author(s):  
A Pandey ◽  
Debrup Mukherjee ◽  
Dipshikha Borah ◽  
M Bandyopadhyay ◽  
Himanshu Tyagi ◽  
...  
Keyword(s):  
Hydrogen Plasma ◽  
Plasma Source ◽  
Ion Source ◽  
Negative Ion ◽  
Helicon Plasma ◽  
Ring Magnet

Development of a compact permanent magnet helicon plasma source for ion beam bioengineering

2011 ◽  
Vol 82 (10) ◽  
pp. 103503 ◽  
Author(s):  
P. Kerdtongmee ◽  
D. Srinoum ◽  
M. Nisoa
Keyword(s):  
Permanent Magnet ◽  
Ion Beam ◽  
Plasma Source ◽  
Helicon Plasma

Growth Rate and Characterization of Silicon Oxide Films Grown in  N 2 O  Atmosphere in a Rapid Thermal Processor

1994 ◽  
Vol 141 (1) ◽  
pp. 259-263 ◽  
Author(s):  
P. Lange ◽  
H. Bernt ◽  
E. Hartmannsgruber ◽  
F. Naumann
Keyword(s):  
Growth Rate ◽  
Silicon Oxide ◽  
Oxide Films

Plasma-assisted chemical vapor deposition and characterization of high quality silicon oxide films

1990 ◽  
Vol 193-194 ◽  
pp. 595-609 ◽  
Author(s):  
S.V Nguyen ◽  
D Dobuzinsky ◽  
D Dopp ◽  
R Gleason ◽  
M Gibson ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Silicon Oxide ◽  
Oxide Films ◽  
Chemical Vapor ◽  
High Quality

Development and characterization of a helicon plasma source

2018 ◽  
Vol 89 (8) ◽  
pp. 083508 ◽  
Author(s):  
N. Sharma ◽  
M. Chakraborty ◽  
N. K. Neog ◽  
M. Bandyopadhyay
Keyword(s):  
Plasma Source ◽  
Helicon Plasma

Structure and Bonding in Nitrided Oxide Films by Sims and Xps

1999 ◽  
Vol 567 ◽  
Author(s):  
S. W. Novak ◽  
J. R. Shallenberger ◽  
D. A. Cole ◽  
J.W. Marino
Keyword(s):  
Plasma Sample ◽  
Oxide Films ◽  
Plasma Source ◽  
Surface Oxide ◽  
Remote Plasma ◽  
Helicon Plasma ◽  
N Distribution ◽  
Gas Source ◽  
N Source ◽  
Structure And Bonding

ABSTRACTThe N distribution and bonding in five types of oxynitride films have been investigated using SIMS and XPS. Films were grown using N2O, NO-O2 and NH3 gas sources, a remote plasma N source and a Helicon plasma source. The SIMS measurements show different N distributions for each type of sample. XPS measurements show only N≡Si3 bonding in the gas source films, N≡Si3 and O-N-Si2 bonding in the remote plasma sample, and N≡Si3, O-N≡Si2, and O2≡N-Si bonding in the Helicon plasma sample. Angle-resolved XPS measurements show that the O2≡N-Si bonding is deepest in the sample whereas the O-N≡Si2 bonding is associated with a surface oxide.

Plasma-assisted deposition of thin silicon oxide films in a remote PECVD reactor and characterization of films produced under different conditions

Vacuum ◽  
2004 ◽  
Vol 75 (4) ◽  
pp. 307-312 ◽  
Author(s):  
F Hamelmann ◽  
A Aschentrup ◽  
A Brechling ◽  
U Heinzmann ◽  
A Gushterov ◽  
...  
Keyword(s):  
Silicon Oxide ◽  
Oxide Films ◽  
Thin Silicon

Growth and characterization of silicon oxide films formed in the presence of Si, SiC, and Si3N4

2016 ◽  
Vol 54 ◽  
pp. 20-28 ◽  
Author(s):  
Yaqiong Li ◽  
Lucas Nana Wiredu Damoah ◽  
Lifeng Zhang
Keyword(s):  
Silicon Oxide ◽  
Oxide Films
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