Structure and Bonding in Nitrided Oxide Films by Sims and Xps
Keyword(s):
N Source
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ABSTRACTThe N distribution and bonding in five types of oxynitride films have been investigated using SIMS and XPS. Films were grown using N2O, NO-O2 and NH3 gas sources, a remote plasma N source and a Helicon plasma source. The SIMS measurements show different N distributions for each type of sample. XPS measurements show only N≡Si3 bonding in the gas source films, N≡Si3 and O-N-Si2 bonding in the remote plasma sample, and N≡Si3, O-N≡Si2, and O2≡N-Si bonding in the Helicon plasma sample. Angle-resolved XPS measurements show that the O2≡N-Si bonding is deepest in the sample whereas the O-N≡Si2 bonding is associated with a surface oxide.
2011 ◽
Vol 8
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pp. 750-754
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1963 ◽
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pp. 4377-4382
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2018 ◽
Vol 89
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pp. 103504
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1996 ◽
Vol 143
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pp. 2990-2995
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2010 ◽
Vol 81
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pp. 075106
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