Negative temperature dependence of the activation energy for impurity diffusion in metals

1970 ◽  
Vol 2 (2) ◽  
pp. K85-K88 ◽  
Author(s):  
A. J. Mortlock
Keyword(s):  
Activation Energy ◽  
Temperature Dependence ◽  
Negative Temperature ◽  
Impurity Diffusion

Diffusion in Cu(Al) Solid Solution

2008 ◽  
Vol 279 ◽  
pp. 63-69 ◽  
Author(s):  
A. Laik ◽  
K. Bhanumurthy ◽  
G.B. Kale
Keyword(s):  
Activation Energy ◽  
Solid Solution ◽  
Temperature Dependence ◽  
Bulk Diffusion ◽  
Impurity Diffusion ◽  
Solid Solution Phase ◽  
Temperature Range ◽  
State Diffusion ◽  
Pure Cu ◽  
Interdiffusion Coefficients

The solid state diffusion characteristics in the Cu(Al) solid solution phase, was investigated in the temperature range of 1023–1223 K using single phase bulk diffusion couples between pure Cu/Cu- 10 at.% Al. The interdiffusion coefficients, D, were calculated using Boltzmann–Matano method and Hall’s method from the concentration profiles of the couples that were determined using EPMA. The interdiffusion coefficients (D) calculated ranges between 1.39 X 10−14 and 3.97 X 10−13 m2/s in the temperature range of 1023 to 1223 K. The composition and temperature dependence of D were established. The activation energy for interdiffusion varies from 123.1 to 134.2 kJ/mol in the concentration range 1 at. % ≤ CAl ≤ 9 at. %. The impurity diffusion coefficient of Al in Cu is determined by extrapolating the interdiffusion coeffficient values to infinite dilution of the alloy i.e CAl →0 and its temperature dependence was also established. The activation energy for impurity diffusion of Al in Cu was found to be 137.1 kJ/mol.

Tracer Impurity Diffusion in Liquid Metals: In in Gallium and Ga in Indium

1974 ◽  
Vol 29 (6) ◽  
pp. 893-896 ◽  
Author(s):  
P. E. Eriksson ◽  
S. J. Larsson ◽  
A. Lodding
Keyword(s):  
Activation Energy ◽  
Temperature Dependence ◽  
Effective Activation Energy ◽  
Liquid Metals ◽  
Recent Model ◽  
Impurity Diffusion ◽  
Linear Temperature Dependence ◽  
Effective Activation ◽  
Linear Temperature ◽  
Arrhenius Parameters

Diffusion measurements have been made for 114In in Ga between 20° and 455 °C, and for 72Ga in In between the m.p. and 380 °C. Linear plots of D vs T describe the results about equally well as Arrhenius representations. The Arrhenius parameters are D0 = 2.1 · 10-4 cm2/S, Q = 1.64 kcal/mol for In in Ga, D0 = 2.4 · 10-4 cm2/S, Q = 1.93 kcal/mol for Ga in In. Ga diffuses faster than In in both matrices. The effective activation energy of Ga is much higher than that of In in the lighter solvent, but the opposite is the case in In. Simple electrostatic screening arguments cannot be applied to the latter results. A recent model, predicting a nearly linear temperature dependence of D, appears somewhat better applicable.

scholarly journals Computational study on the mechanism and kinetics for the reaction between HO2 and n-propyl peroxy radical

RSC Advances ◽  
2019 ◽  
Vol 9 (69) ◽  
pp. 40437-40444
Author(s):  
Zhenli Yang ◽  
Xiaoxiao Lin ◽  
Jiacheng Zhou ◽  
Mingfeng Hu ◽  
Yanbo Gai ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Temperature Regime ◽  
Computational Study ◽  
Peroxy Radical ◽  
Negative Temperature ◽  
Mechanism And Kinetics ◽  
Lower Temperature

The negative temperature dependence for the HO2 + n-C3H7O2 reaction in lower temperature regime.

Negative Temperature-Dependence of Stress-Induced R→B19′ Transformation in Nanocrystalline NiTi Alloy

2021 ◽  
Author(s):  
Taotao Wang ◽  
Xiangxiang Rao ◽  
Daqiang Jiang ◽  
Yang Ren ◽  
Lishan Cui ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Niti Alloy ◽  
Negative Temperature

P+ implanted 6H-SiC n+-i-p diodes: evidence for a post-implantation-annealing dependent defect activation

2014 ◽  
Vol 1693 ◽  
Author(s):  
R. Nipoti ◽  
M. Puzzanghera ◽  
F. Moscatelli
Keyword(s):  
Activation Energy ◽  
Temperature Dependence ◽  
Ideality Factor ◽  
Low Voltage ◽  
Reverse Current ◽  
Forward Current ◽  
Current Region ◽  
Recombination Centers ◽  
Energy Dependent ◽  
Post Implantation

ABSTRACTTwo n+-i-p 6H-SiC diode families with P+ ion implanted emitter have been processed with all identical steps except the post implantation annealing: 1300°C/20min without C-cap has been compared with 1950°C/10min with C-cap. The analysis of the temperature dependence of the reverse current at low voltage (-100V) in the temperature range 27-290°C shows the dominance of a periphery current which is due to generation centers with number and activation energy dependent on the post implantation annealing process. The analysis of the temperature dependence of the forward current shows two ideality factor n region, one with n = 1.9/2 at low voltage and the other one with 1 < n < 2 without passing through 1 for increasing voltages. For both the diode families the current with n = 1.9/2 is a periphery current due to recombination centers with a thermal activation energy near the 6H-SiC mid gap. In the forward current region of 1 < n < 2, the two diode families show different ideality factor values which could be attributed to a different post implantation annealing defect activation.

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