Annealing effects of ZnO films deposited on (0001) Al2O3 and (111) Si substrate by RF sputtering and GaN layer grown on ZnO films used as buffer layer by MOCVD

2003 ◽  
Vol 0 (7) ◽  
pp. 2111-2115
Author(s):  
S.-R. Jeon ◽  
M.-A. Yu ◽  
S. K. Shim ◽  
G. M. Yang ◽  
S. J. Son
Keyword(s):  
Buffer Layer ◽  
Rf Sputtering ◽  
Zno Films ◽  
Si Substrate ◽  
Annealing Effects

Effect of LaNiO3 Buffer Layer on the Electrical and Optical Properties of Nonpolar ZnO Film Deposited on (100) Si Substrate

2019 ◽  
Vol 793 ◽  
pp. 29-34
Author(s):  
Quan Liang Zhao ◽  
Tian Yu Sheng ◽  
Lei Pang ◽  
Jie Jian Di ◽  
Guang Ping He ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Buffer Layers ◽  
Zno Films ◽  
Band Edge Emission ◽  
X Ray Diffraction ◽  
Zno Film ◽  
Si Substrate ◽  
Radio Frequency Sputtering ◽  
Silicon Based ◽  
Current Behavior

Nonpolar ZnO films are deposited on (100) Si substrate using LaNiO3 conducting buffer layer by radio frequency sputtering. X-ray diffraction results show that ZnO films are (110) and (002) orientation with and without LaNiO3 buffer layer. The current behavior of ZnO/LaNiO3 heterojunction exhibits ohmic conduction which is different from the diode-like rectification current behavior of ZnO film using insulated buffer layers. The photoluminescence properties indicate that the (110)-oriented nonpolar ZnO film has better band-edge emission than that of (002)-oriented polar ZnO film. It is suggested that LaNiO3 buffer layer can be used to deposit silicon-based ZnO film with well ohmic contact electrode in optoelectronic devices.

ZnO:Ag film growth on Si substrate with ZnO buffer layer by rf sputtering

2011 ◽  
Vol 257 (8) ◽  
pp. 3463-3467 ◽  
Author(s):  
Li Duan ◽  
Xiaochen Yu ◽  
Lei Ni ◽  
Zhuo Wang
Keyword(s):  
Buffer Layer ◽  
Film Growth ◽  
Rf Sputtering ◽  
Si Substrate ◽  
Zno Buffer Layer

Effect of ZnO buffer layer prepared by rf sputtering on heteroepitaxial growth of high-quality ZnO films

Vacuum ◽  
2004 ◽  
Vol 74 (3-4) ◽  
pp. 601-605 ◽  
Author(s):  
D. Sato ◽  
Y. Kashiwaba ◽  
K. Haga ◽  
H. Watanabe ◽  
B.P. Zhang ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Rf Sputtering ◽  
Zno Films ◽  
Heteroepitaxial Growth ◽  
High Quality ◽  
Zno Buffer Layer

Heteroepitaxial Growth of 3C-SiC on Si (111) Substrate Using AlN as a Buffer Layer

2008 ◽  
Vol 600-603 ◽  
pp. 251-254 ◽  
Author(s):  
Yong Mei Zhao ◽  
Guo Sheng Sun ◽  
Xing Fang Liu ◽  
Jia Ye Li ◽  
Wan Shun Zhao ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Chemical Vapor ◽  
Heteroepitaxial Growth ◽  
Si Substrate ◽  
Si Substrates ◽  
Good Crystallinity ◽  
Aln Film ◽  
Pressure Chemical ◽  
Aln Buffer ◽  
Sic Film

Using AlN as a buffer layer, 3C-SiC film has been grown on Si substrate by low pressure chemical vapor deposition (LPCVD). Firstly growth of AlN thin films on Si substrates under varied V/III ratios at 1100oC was investigated and the (002) preferred orientational growth with good crystallinity was obtained at the V/III ratio of 10000. Annealing at 1300oC indicated the surface morphology and crystallinity stability of AlN film. Secondly the 3C-SiC film was grown on Si substrate with AlN buffer layer. Compared to that without AlN buffer layer, the crystal quality of the 3C-SiC film was improved on the AlN/Si substrate, characterized by X-ray diffraction (XRD) and Raman measurements.

Effects of the Sputtering Time of AlN Buffer Layer on the Quality of ZnO Thin Films

2014 ◽  
Vol 881-883 ◽  
pp. 1117-1121 ◽  
Author(s):  
Xiang Min Zhao
Keyword(s):  
Thin Films ◽  
Buffer Layer ◽  
Rf Magnetron Sputtering ◽  
Buffer Layers ◽  
Zno Thin Films ◽  
Zno Films ◽  
Si Substrates ◽  
Atomic Force ◽  
Structure Morphology ◽  
Aln Buffer

ZnO thin films with different thickness (the sputtering time of AlN buffer layers was 0 min, 30 min,60 min, and 90 min, respectively) were prepared on Si substrates using radio frequency (RF) magnetron sputtering system.X-ray diffraction (XRD), atomic force microscope (AFM), Hall measurements setup (Hall) were used to analyze the structure, morphology and electrical properties of ZnO films.The results show that growth are still preferred (002) orientation of ZnO thin films with different sputtering time of AlN buffer layer,and for the better growth of ZnO films, the optimal sputtering time is 60 min.

Effect of Si substrate on ethanol gas sensing properties of ZnO films

2011 ◽  
Vol 519 (18) ◽  
pp. 6151-6154 ◽  
Author(s):  
Xiaoyan Zhou ◽  
Qingzhong Xue ◽  
Ming Ma ◽  
Jianpeng Li
Keyword(s):  
Gas Sensing ◽  
Zno Films ◽  
Si Substrate ◽  
Sensing Properties ◽  
Gas Sensing Properties

MOCVD growth of ZnO films on Si(111) substrate using a thin AlN buffer layer

2005 ◽  
Vol 284 (3-4) ◽  
pp. 459-463 ◽  
Author(s):  
L. Wang ◽  
Y. Pu ◽  
Y.F. Chen ◽  
C.L. Mo ◽  
W.Q. Fang ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Zno Films ◽  
Mocvd Growth ◽  
Aln Buffer
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