X-ray investigations of GaInN single quantum wells grown by atomic layer epitaxy and metalorganic vapor phase epitaxy

2014 ◽  
Vol 11 (3-4) ◽  
pp. 393-396
Author(s):  
Guangxu Ju ◽  
Yoshihiro Kato ◽  
Yoshio Honda ◽  
Masao Tabuchi ◽  
Yoshikazu Takeda ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Vapor Phase ◽  
Atomic Layer ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Atomic Layer Epitaxy ◽  
Single Quantum ◽  
X Ray

Effect on GaN/Al0.17Ga0.83N and Al0.05Ga0.95N/Al0.17Ga0.83N Quantum Wells by Isoelectronic In-Doping during Metalorganic Vapor Phase Epitaxy

2000 ◽  
Vol 39 (Part 2, No. 2B) ◽  
pp. L143-L145 ◽  
Author(s):  
Michihiko Kariya ◽  
Shugo Nitta ◽  
Masayoshi Kosaki ◽  
Yohei Yukawa ◽  
Shigeo Yamaguchi ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
In Doping

Selective Area Growth by Metal Organic Vapor Phase Epitaxy and Atomic Layer Epitaxy Using Ga2O3as a Novel Mask Layer

1999 ◽  
Vol 38 (Part 1, No. 3A) ◽  
pp. 1516-1520 ◽  
Author(s):  
Shingo Hirose ◽  
Akihiro Yoshida ◽  
Masaaki Yamaura ◽  
Kazuhiko Hara ◽  
Hiro Munekata
Keyword(s):  
Vapor Phase ◽  
Atomic Layer ◽  
Vapor Phase Epitaxy ◽  
Atomic Layer Epitaxy ◽  
Selective Area Growth ◽  
Organic Vapor ◽  
Mask Layer ◽  
Selective Area ◽  
Area Growth ◽  
Metal Organic

Suppression of metastable-phase inclusion in N-polar (0001¯) InGaN/GaN multiple quantum wells grown by metalorganic vapor phase epitaxy

2015 ◽  
Vol 106 (22) ◽  
pp. 222102 ◽  
Author(s):  
Kanako Shojiki ◽  
Jung-Hun Choi ◽  
Takuya Iwabuchi ◽  
Noritaka Usami ◽  
Tomoyuki Tanikawa ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Vapor Phase ◽  
Metastable Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Phase Inclusion
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