Aligned carbon–hydrogen complexes in GaAs formed by the decomposition of trimethylgallium during metalorganic vapor phase epitaxy and atomic layer epitaxy

1997 ◽  
Vol 81 (11) ◽  
pp. 7255-7260 ◽  
Author(s):  
B. R. Davidson ◽  
R. C. Newman ◽  
H. Fushimi ◽  
K. Wada ◽  
H. Yokoyama ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Atomic Layer ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Atomic Layer Epitaxy

X-ray investigations of GaInN single quantum wells grown by atomic layer epitaxy and metalorganic vapor phase epitaxy

2014 ◽  
Vol 11 (3-4) ◽  
pp. 393-396
Author(s):  
Guangxu Ju ◽  
Yoshihiro Kato ◽  
Yoshio Honda ◽  
Masao Tabuchi ◽  
Yoshikazu Takeda ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Vapor Phase ◽  
Atomic Layer ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Atomic Layer Epitaxy ◽  
Single Quantum ◽  
X Ray

Selective Area Growth by Metal Organic Vapor Phase Epitaxy and Atomic Layer Epitaxy Using Ga2O3as a Novel Mask Layer

1999 ◽  
Vol 38 (Part 1, No. 3A) ◽  
pp. 1516-1520 ◽  
Author(s):  
Shingo Hirose ◽  
Akihiro Yoshida ◽  
Masaaki Yamaura ◽  
Kazuhiko Hara ◽  
Hiro Munekata
Keyword(s):  
Vapor Phase ◽  
Atomic Layer ◽  
Vapor Phase Epitaxy ◽  
Atomic Layer Epitaxy ◽  
Selective Area Growth ◽  
Organic Vapor ◽  
Mask Layer ◽  
Selective Area ◽  
Area Growth ◽  
Metal Organic
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