AC Equivalent Circuit Modeling

1997 ◽  
pp. 193-260 ◽  
Author(s):  
Robert W. Erickson
Keyword(s):  
Equivalent Circuit ◽  
Circuit Modeling ◽  
Equivalent Circuit Modeling

scholarly journals Equivalent Circuit Modeling of a Dual-Gate Graphene FET

Electronics ◽  
2020 ◽  
Vol 10 (1) ◽  
pp. 63
Author(s):  
Saima Hasan ◽  
Abbas Z. Kouzani ◽  
M A Parvez Mahmud
Keyword(s):  
Equivalent Circuit ◽  
Gate Voltage ◽  
Voltage Dependence ◽  
Drain Current ◽  
Bilayer Graphene ◽  
Circuit Modeling ◽  
Equivalent Circuit Modeling ◽  
Dual Gate ◽  
Source Voltage ◽  
Transit Frequency

This paper presents a simple and comprehensive model of a dual-gate graphene field effect transistor (FET). The quantum capacitance and surface potential dependence on the top-gate-to-source voltage were studied for monolayer and bilayer graphene channel by using equivalent circuit modeling. Additionally, the closed-form analytical equations for the drain current and drain-to-source voltage dependence on the drain current were investigated. The distribution of drain current with voltages in three regions (triode, unipolar saturation, and ambipolar) was plotted. The modeling results exhibited better output characteristics, transfer function, and transconductance behavior for GFET compared to FETs. The transconductance estimation as a function of gate voltage for different drain-to-source voltages depicted a proportional relationship; however, with the increase of gate voltage this value tended to decline. In the case of transit frequency response, a decrease in channel length resulted in an increase in transit frequency. The threshold voltage dependence on back-gate-source voltage for different dielectrics demonstrated an inverse relationship between the two. The analytical expressions and their implementation through graphical representation for a bilayer graphene channel will be extended to a multilayer channel in the future to improve the device performance.

A New GaN HEMT Equivalent Circuit Modeling Technique Based on X-Parameters

2016 ◽  
Vol 64 (9) ◽  
pp. 2758-2777 ◽  
Author(s):  
Riadh Essaadali ◽  
Anwar Jarndal ◽  
Ammar B. Kouki ◽  
Fadhel M. Ghannouchi
Keyword(s):  
Equivalent Circuit ◽  
Modeling Technique ◽  
Circuit Modeling ◽  
Gan Hemt ◽  
Equivalent Circuit Modeling

Modeling and Simulation of the New Thin Film Transformer Equivalent Circuit

2013 ◽  
Vol 785-786 ◽  
pp. 1273-1277
Author(s):  
Xiao Ping Hu ◽  
Liang Zheng ◽  
Ye Long Zhong ◽  
Li Yun Ye
Keyword(s):  
Thin Film ◽  
Modeling And Simulation ◽  
Equivalent Circuit ◽  
Circuit Modeling ◽  
Automatic Extraction ◽  
S Parameter ◽  
Equivalent Circuit Modeling ◽  
Equivalent Circuit Parameters ◽  
Simulation Results

We research the new thin film transformer equivalent circuit modeling, simulate and modify the traditional estimate formula of the transformer equivalent circuit parameters, in order to attain the automatic extraction of thin film transformer parameters. This paper used MATLAB and Agilent ADS on the thin film transformers for the S parameter simulation. The simulation results show the estimation has better accurate and universal, it also shows the effect of different number of turns and thin film materials on the properties of thin film transformer.

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