Grain Segmentation in Atomic Force Microscopy for Thin-Film Deposition Quality Control

2019 ◽  
pp. 385-394
Author(s):  
Nicolò Lanza ◽  
Alessandro Romeo ◽  
Marco Cristani ◽  
Francesco Setti
Keyword(s):  
Thin Film ◽  
Atomic Force Microscopy ◽  
Quality Control ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Force Microscopy ◽  
Atomic Force

Atomic force microscopy studies of ZnS films grown on (100) GaAs by the successive ionic layer adsorption and reaction method

1998 ◽  
Vol 13 (6) ◽  
pp. 1688-1692 ◽  
Author(s):  
Mika P. Valkonen ◽  
Seppo Lindroos ◽  
Tapio Kanniainen ◽  
Markku Leskelä ◽  
Roland Resch ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Force Microscopy ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Force Microscopy ◽  
Atomic Force ◽  
Layer Adsorption ◽  
Silar Technique ◽  
Ionic Layer

In this study zinc sulfide thin films were grown by the successive ionic layer adsorption and reaction (SILAR) technique on (100) GaAs substrates from aqueous precursor solutions. The atomic force microscopy (AFM) method was used to study the growth of the films up to a thickness of 180 nm. The ZnS thin films on (100) GaAs were smooth with an rms roughness of 0.2–1.9 nm depending on the film thickness. After the GaAs surface was covered with ZnS, the growth appeared to be nearly layerwise. In addition, in situ AFM studies were carried out to analyze the dissolution of (100) GaAs in water, which is a process competing with the thin film deposition by the SILAR.

A HfO2 Thin Film Resistive Switch Based on Conducting Atomic Force Microscopy

2011 ◽  
Vol 14 (8) ◽  
pp. H311 ◽  
Author(s):  
J. Y. Son ◽  
D.-Y. Kim ◽  
H. Kim ◽  
W. J. Maeng ◽  
Y.-S. Shin ◽  
...  
Keyword(s):  
Thin Film ◽  
Atomic Force Microscopy ◽  
Resistive Switch ◽  
Force Microscopy ◽  
Atomic Force

Effect of ultra-thin Cu underlayer on the magnetic properties of Ni80Fe50 / Fe50Mn50 films

1999 ◽  
Vol 562 ◽  
Author(s):  
C. Liu ◽  
L. Shen ◽  
H. Jiang ◽  
D. Yang ◽  
G. Wu ◽  
...  
Keyword(s):  
Thin Film ◽  
Atomic Force Microscopy ◽  
Exchange Bias ◽  
Film Material ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Maximum Value ◽  
Film Roughness

ABSTRACTThe Ni80Fe20/Fe50Mn50,thin film system exhibits exchange bias behavior. Here a systematic study of the effect of atomic-scale thin film roughness on coercivity and exchange bias is presented. Cu (t) / Ta (100 Å) / Ni80Fe20 (100 Å) / Fe50Mno50 (200 Å) / Ta (200 Å) with variable thickness, t, of the Cu underlayer were DC sputtered on Si (100) substrates. The Cu underlayer defines the initial roughness that is transferred to the film material since the film grows conformal to the initial morphology. Atomic Force Microscopy and X-ray diffraction were used to study the morphology and texture of the films. Morphological characterization is then correlated with magnetometer measurements. Atomic Force Microscopy shows that the root mean square value of the film roughness exhibits a maximum of 2.5 Å at t = 2.4 Å. X-ray diffraction spectra show the films are polycrystalline with fcc (111) texture and the Fe50Mn50 (111) peak intensity decreases monotonically with increasing Cu thickness, t. Without a Cu underlayer, the values of the coercivity and loop shift are, Hc = 12 Oe and Hp = 56 Oe, respectively. Both the coercivity and loop shift change with Cu underlayer thickness. The coercivity reaches a maximum value of Hc= 36 Oe at t = 4 Å. The loop shift exhibits an initial increase with t, reaches a maximum value of HP = 107 Oe at t = 2.4 Å, followed by a decrease with greater Cu thickness. These results show that a tiny increase in the film roughness has a huge effect on the exchange bias magnitude.

Scratching properties of nickel-iron thin film and silicon using atomic force microscopy

2009 ◽  
Vol 106 (4) ◽  
pp. 044314 ◽  
Author(s):  
Ampere A. Tseng ◽  
Jun-ichi Shirakashi ◽  
Shinya Nishimura ◽  
Kazuya Miyashita ◽  
Andrea Notargiacomo
Keyword(s):  
Thin Film ◽  
Atomic Force Microscopy ◽  
Nickel Iron ◽  
Force Microscopy ◽  
Atomic Force
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