Hybrid Phosphor Materials for Optoelectronic Application

Author(s):  
Jemy James ◽  
Sharin Maria Thomas ◽  
Ajeesh Kumar Somakumar ◽  
Blessy Joseph ◽  
Nandakumar Kalarikkal ◽  
...  
Author(s):  
Francisco Germán Mejía-Hernández ◽  
Oscar Javier Hernández-Ortíz ◽  
Francisco Misael Muñoz-Pérez ◽  
Armando Irving Martínez-Pérez ◽  
Rosa Angeles Vázquez-García ◽  
...  

2021 ◽  
Vol 127 (2) ◽  
Author(s):  
M. Karyaoui ◽  
D. Ben Jemia ◽  
M. Daoudi ◽  
A. Bardaoui ◽  
A. Boukhachem ◽  
...  

2019 ◽  
Vol 238 ◽  
pp. 309-312 ◽  
Author(s):  
Yicheng Wang ◽  
Honglai Li ◽  
Tiefeng Yang ◽  
Zixing Zou ◽  
Zhaoyang Qi ◽  
...  

2012 ◽  
Vol 584 ◽  
pp. 290-294 ◽  
Author(s):  
Jeyaprakash Pandiarajan ◽  
Natarajan Jeyakumaran ◽  
Natarajan Prithivikumaran

The promotion of silicon (Si) from being the key material for microelectronics to an interesting material for optoelectronic application is a consequence of the possibility to reduce its device dimensionally by a cheap and easy technique. In fact, electrochemical etching of Si under controlled conditions leads to the formation of nanocrystalline porous silicon (PS) where quantum confinement of photo excited carriers and surface species yield to a band gap opening and an increased radiative transition rate resulting in efficient light emission. In the present study, the nanostructured PS samples were prepared using anodic etching of p-type silicon. The effect of current density on structural and optical properties of PS, has been investigated. XRD studies confirm the presence of silicon nanocrystallites in the PS structure. By increasing the current density, the average estimated values of grain size are found to be decreased. SEM images indicate that the pores are surrounded by a thick columnar network of silicon walls. The observed PL spectra at room temperature for all the current densities confirm the formation of PS structures with nanocrystalline features. PL studies reveal that there is a prominent visible emission peak at 606 nm. The obtained variation of intensity in PL emission may be used for intensity varied light emitting diode applications. These studies confirm that the PS is a versatile material with potential for optoelectronics application.


2012 ◽  
Vol 4 (3) ◽  
pp. 1560-1564 ◽  
Author(s):  
Saikat Dutta ◽  
Astam K. Patra ◽  
Sudipta De ◽  
Asim Bhaumik ◽  
Basudeb Saha

1999 ◽  
Vol 559 ◽  
Author(s):  
F.M. Aliev ◽  
M. Kreuzer ◽  
Yu.P. Panarin

ABSTRACTNematic liquid crystal filled with Aerosil particles, a prospective composite material for optoelectronic application, has been investigated by static light scattering and Photon Correlation Spectroscopy (PCS). The Aerosil particles in filled nematic liquid crystals (FN) form a network structure with LC domains about 2500 Å in size with a random distribution of the director orientation of each domain.We found that the properties of 5CB are considerably affected by the network. The N-I phase transition in filled 5CB was found to be smeared out and depressed. PCS experiments show that two new relaxation processes appear in filled 5CB in addition to the director fluctuation process in bulk. The slow relaxation process, with a broad spectrum of relaxation times, is somewhat similar to the slow decay, which is observed in confined nematic liquid crystal.The middle frequency process was assigned to the director fluctuations in the surface layer formed at the particle-LC interface. The decay function describing this relaxation process is a stretched exponential (β ≍ 0.7). The temperature dependence of the relaxation times of the middle frequency obeys the Vogel-Rilcher law. Such a temperature dependence, accompanied by a broad spectrum of relaxation times suggests that the dynamics of the director fluctuations near the Aerosil particle-LC interface is glass-like.


2017 ◽  
Vol 5 (33) ◽  
pp. 8444-8453 ◽  
Author(s):  
Shun-Wen Cheng ◽  
Tzu-Tien Huang ◽  
Chia-Liang Tsai ◽  
Guey-Sheng Liou

Highly transparent polyhydroxyimide/TiO2 and ZrO2 hybrids films with high glass transition temperature and low thermal expansion coefficient for optoelectronic application.


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