Physical and Electrical Characterisation of 3C-SiC and 4H-SiC for Power Semiconductor Device Applications

2014 ◽  
pp. 929-932
Author(s):  
M. R. Jennings ◽  
C. A. Fisher ◽  
S. M. Thomas ◽  
Y. Sharma ◽  
D. Walker ◽  
...  
Keyword(s):  
Semiconductor Device ◽  
Power Semiconductor Device ◽  
Power Semiconductor ◽  
Device Applications

Clustered insulated gate bipolar transistor: a new power semiconductor device

2001 ◽  
Vol 148 (2) ◽  
pp. 75 ◽  
Author(s):  
M. Sweet ◽  
O. Spulber ◽  
J.V. Subhas Chandra Bose ◽  
L. Ngwendson ◽  
K.V. Vershinin ◽  
...  
Keyword(s):  
Semiconductor Device ◽  
Bipolar Transistor ◽  
Power Semiconductor Device ◽  
Power Semiconductor ◽  
Insulated Gate Bipolar Transistor

Development of New Complex Machining Technology for Single Crystal Silicon Carbide Polishing

2016 ◽  
Vol 10 (5) ◽  
pp. 786-793
Author(s):  
Tsuneo Kurita ◽  
◽  
Koji Miyake ◽  
Kenji Kawata ◽  
Kiwamu Ashida ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Single Crystal ◽  
Semiconductor Device ◽  
Single Crystal Silicon ◽  
High Hardness ◽  
Electrochemical Technique ◽  
Crystal Silicon ◽  
Abrasive Particles ◽  
Power Semiconductor ◽  
Device Applications

Single-crystal, silicon carbide (SiC) wafers surpass silicon in terms of voltage resistance and heat resistance, and show promise for use in power semiconductor device applications. The aim of this research is to develop a complex machining technology for SiC, which is known to be difficult to process owing to its high hardness. This paper proposes a complex machining method based on converting SiC into a material with a relatively low hardness, and then polishing it using abrasive particles with a higher hardness. The proposed polishing method uses either a photodissociation or an electrochemical technique to reduce the hardness of SiC. The effectiveness of the combined technique is experimentally demonstrated. In addition, a method is proposed for monitoring the processing state by measuring the electric current.

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