Chemical-Mechanical Planarization of Semiconductor Materials

2004 ◽  
Keyword(s):  
Chemical Mechanical Planarization ◽  
Semiconductor Materials

Cathodoluminescence of Catalyst Crystallites

1982 ◽  
Vol 40 ◽  
pp. 664-665
Author(s):  
E.D. Boyes ◽  
P.L. Gai ◽  
D.B. Darby ◽  
C. Warwick
Keyword(s):  
Defect Density ◽  
Chemical Properties ◽  
Operating Conditions ◽  
Semiconductor Materials ◽  
Environmental Cell ◽  
High Resolution Structure ◽  
Commercially Important ◽  
Crystallographic Defects ◽  
Resolution Structure

The extended crystallographic defects introduced into some oxide catalysts under operating conditions may be a consequence and accommodation of the changes produced by the catalytic activity, rather than always being the origin of the reactivity. Operation without such defects has been established for the commercially important tellurium molybdate system. in addition it is clear that the point defect density and the electronic structure can both have a significant influence on the chemical properties and hence on the effectiveness (activity and selectivity) of the material as a catalyst. SEM/probe techniques more commonly applied to semiconductor materials, have been investigated to supplement the information obtained from in-situ environmental cell HVEM, ultra-high resolution structure imaging and more conventional AEM and EPMA chemical microanalysis.

Deriving ultrapure three-dimensional semiconductor materials under space vacuum conditions

2003 ◽  
Vol 8 (5-6) ◽  
pp. 30-32
Author(s):  
B.E. Paton ◽  
◽  
E.A. Asnis ◽  
S.P. Zabolotin ◽  
P.I. Baranskii ◽  
...  
Keyword(s):  
Three Dimensional ◽  
Semiconductor Materials ◽  
Space Vacuum

A Latent Issue of Via Resistance: Mechanism and Solution

2018 ◽  
Author(s):  
Wentao Qin ◽  
Scott Donaldson ◽  
Dan Rogers ◽  
Lahcen Boukhanfra ◽  
Julien Thiefain ◽  
...  
Keyword(s):  
Thermal Stress ◽  
Chemical Mechanical Planarization ◽  
Resistance Mechanism ◽  
Formation Enthalpy ◽  
Metal Line ◽  
Device Failure ◽  
Valence Electrons ◽  
Wafer Processing ◽  
Field Failure ◽  
And Tungsten

Abstract Many semiconductor products are manufactured with mature technologies involving the uses of aluminum (Al) lines and tungsten (W) vias. High resistances of the vias were sometimes observed only after electrical or thermal stress. A layer of Ti oxide was found on such a via. In the wafer processing, the post W chemical mechanical planarization (WCMP) cleaning left residual W oxide on the W plugs. Ti from the overlaying metal line spontaneously reduced the W oxide, through which Ti oxide formed. Compared with W oxide, the Ti oxide has a larger formation enthalpy, and the valence electrons of Ti are more tightly bound to the O ion cores. As a result, the Ti oxide is more resistive than the W oxide. Consequently, the die functioned well in the first test in the fab, but the via resistance increased significantly after a thermal stress, which led to device failure in the second test. The NH4OH concentration was therefore increased to more effectively remove residual W oxide, which solved the problem. The thermal stress had prevented the latent issue from becoming a more costly field failure.

A Proof for the Possibility of Ce-Oxide from CMP Residuals in Si-Wafers by Analytical TEM

2012 ◽  
Author(s):  
Wayne Zhao ◽  
Liem Do Thanh ◽  
Michael Gribelyuk ◽  
Mary-Ann Zaitz ◽  
Wing Lai
Keyword(s):  
Technology Development ◽  
Early Stage ◽  
Chemical Mechanical Planarization ◽  
Particle Cluster ◽  
Limited Region ◽  
Physical Evidence ◽  
Analytical Tem ◽  
Transmission Electron ◽  
Oxide Particles

Abstract Inclusion of cerium (Ce) oxide particles as an abrasive into chemical mechanical planarization (CMP) slurries has become popular for wafer fabs below the 45nm technology node due to better polishing quality and improved CMP selectivity. Transmission electron microscopy (TEM) has difficulties finding and identifying Ce-oxide residuals due to the limited region of analysis unless dedicated efforts to search for them are employed. This article presents a case study that proved the concept in which physical evidence of Ce-rich particles was directly identified by analytical TEM during a CMP tool qualification in the early stage of 20nm node technology development. This justifies the need to setup in-fab monitoring for trace amounts of CMP residuals in Si-based wafer foundries. The fact that Cr resided right above the Ce-O particle cluster, further proved that the Ce-O particles were from the wafer and not introduced during the sample preparation.

Investigation of Photoelectric Converters Based on Different Semiconductor Materials

2018 ◽  
Vol 10 (4) ◽  
pp. 04023-1-04023-6 ◽  
Author(s):  
Yu. V. Natarova ◽  
◽  
A. B. Galat ◽  
A. S. Gnatenko ◽  
◽  
...  
Keyword(s):  
Semiconductor Materials ◽  
Photoelectric Converters
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