Improved efficiency in green polymer light-emitting diodes with air-stable electrodes

1994 ◽  
Vol 23 (5) ◽  
pp. 453-458 ◽  
Author(s):  
C. Zhang ◽  
S. Hoger ◽  
K. Pakbaz ◽  
F. Wudl ◽  
A. J. Heeger
2008 ◽  
Vol 158 (21-24) ◽  
pp. 785-789 ◽  
Author(s):  
Min Ju Cho ◽  
Myung Hee Kim ◽  
Kyu Nam Kim ◽  
Jung-Il Jin ◽  
Young Min Kim ◽  
...  

2006 ◽  
Vol 100 (3) ◽  
pp. 034506 ◽  
Author(s):  
J. Li ◽  
T. Sano ◽  
Y. Hirayama ◽  
T. Tomita ◽  
H. Fujii ◽  
...  

2015 ◽  
Vol 15 (10) ◽  
pp. 7693-7698
Author(s):  
Byung Min Park ◽  
Gi Ppeum Kim ◽  
Sae Chan Mun ◽  
Ho Jung Chang

The green polymer light emitting diodes (PLEDs) were fabricated using the solution precursor synthesis method. To improve the device’s electrical and optical properties, gold (Au) nanoparticles (NPs) were added to the hole injection layer (HIL) with poly(3,4-ethylene-dioxythiophene): poly(styrenesulfolnate) (PEDOT:PSS) organic material. The green PLED devices with a structure of glass/ITO/PEDOT:PSS+Au NPs/PVK:Ir(ppy)3/TPBi/LiF/Al were prepared by conventional spin-coating and thermal evaporation methods. Various concentrations of Au NPs were doped to the HILs to optimize the device’s light emitting characteristic. The effects of Au NPs concentrations on the properties of PLEDs were investigated. The doping concentrations of Au NPs were changed ranging from 0.0 to 1.0 vol%. At the optimized Au NPs concentration of 0.5 vol%, we also studied the effects of various film layers with and without Au NPs on the properties of PLEDs. The maximum luminance and external quantum efficiency of the devices were found to be 20430 cd/m2 and 7.49%, respectively.


2003 ◽  
Vol 83 (23) ◽  
pp. 4695-4697 ◽  
Author(s):  
Qianfei Xu ◽  
Jianyong Ouyang ◽  
Yang Yang ◽  
Takayuki Ito ◽  
Junji Kido

2000 ◽  
Vol 660 ◽  
Author(s):  
Thomas M. Brown ◽  
Ian S. Millard ◽  
David J. Lacey ◽  
Jeremy H. Burroughes ◽  
Richard H. Friend ◽  
...  

ABSTRACTThe semiconducting-polymer/injecting-electrode heterojunction plays a crucial part in the operation of organic solid state devices. In polymer light-emitting diodes (LEDs), a common fundamental structure employed is Indium-Tin-Oxide/Polymer/Al. However, in order to fabricate efficient devices, alterations to this basic structure have to be carried out. The insertion of thin layers, between the electrodes and the emitting polymer, has been shown to greatly enhance LED performance, although the physical mechanisms underlying this effect remain unclear. Here, we use electro-absorption measurements of the built-in potential to monitor shifts in the barrier height at the electrode/polymer interface. We demonstrate that the main advantage brought about by inter-layers, such as poly(ethylenedioxythiophene)/poly(styrene sulphonic acid) (PEDOT:PSS) at the anode and Ca, LiF and CsF at the cathode, is a marked reduction of the barrier to carrier injection. The electro- absorption results also correlate with the electroluminescent characteristics of the LEDs.


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