scholarly journals Optimized sub-wavelength grating mirror design for mid-infrared wavelength range

2010 ◽  
Vol 103 (4) ◽  
pp. 1139-1144 ◽  
Author(s):  
C. Chevallier ◽  
N. Fressengeas ◽  
F. Genty ◽  
J. Jacquet
Keyword(s):  
Wavelength Range ◽  
Mid Infrared ◽  
Infrared Wavelength ◽  
Sub Wavelength

scholarly journals Chiral plasmonic metasurface absorbers in the mid-infrared wavelength range

2020 ◽  
Vol 45 (19) ◽  
pp. 5372
Author(s):  
Md. Shamim Mahmud ◽  
Daniel Rosenmann ◽  
David A. Czaplewski ◽  
Jie Gao ◽  
Xiaodong Yang
Keyword(s):  
Wavelength Range ◽  
Mid Infrared ◽  
Infrared Wavelength

scholarly journals Optical modulation in Ge-rich SiGe waveguides in the mid-infrared wavelength range up to 11 µm

2020 ◽  
Vol 1 (1) ◽  
Author(s):  
Miguel Montesinos-Ballester ◽  
Vladyslav Vakarin ◽  
Joan Manel Ramirez ◽  
Qiankun Liu ◽  
Carlos Alonso-Ramos ◽  
...  
Keyword(s):  
Wavelength Range ◽  
Optical Modulation ◽  
Mid Infrared ◽  
Infrared Wavelength

A tunable liquid crystal Fabry-Perot hyperspectral imaging device in mid-infrared wavelength range

2013 ◽  
Author(s):  
Anbang Fu ◽  
Huaidong Zhang ◽  
Xinyu Zhang ◽  
Hongshi Sang ◽  
Tianyu Zhang ◽  
...  
Keyword(s):  
Liquid Crystal ◽  
Hyperspectral Imaging ◽  
Wavelength Range ◽  
Imaging Device ◽  
Mid Infrared ◽  
Infrared Wavelength ◽  
Fabry Perot

scholarly journals Comparative analysis of GaAs- and GaSb-based active regions emitting in the mid-infrared wavelength range

2015 ◽  
Vol 63 (3) ◽  
pp. 597-603
Author(s):  
Ł. Piskorski ◽  
L. Frasunkiewicz ◽  
R.P. Sarzała
Keyword(s):  
Active Region ◽  
Wavelength Range ◽  
Compressive Strain ◽  
Active Regions ◽  
High Gain ◽  
Mid Infrared ◽  
Infrared Wavelength ◽  
Laser Sources ◽  
Maximal Gain ◽  
Highly Strained

Abstract In the present paper the results of the computer analysis of the GaAs-based and GaSb-based active regions that can be applied in compact semiconductor laser sources of radiation at mid-infrared wavelengths are presented. Quantum well material contents and strain dependencies on the maximal gain are investigated. It is shown that above 3 μm the maximal gain obtained for GaInNAs/AlGaInAs active region is high only for thick, highly-strained GaInNAs QWs with N concentration higher than 2%. Much higher gain in this wavelength range can be obtained for GaInAsSb/AlGaAsSb active region, which offers relatively high gain even at 4.5 μm when the Sb content in GaInAsSb and compressive strain in this layer are equal to 50% and − 2%, respectively.

GaSb-based VCSELs emitting in the mid-infrared wavelength range (2–3μm) grown by MBE

2009 ◽  
Vol 311 (7) ◽  
pp. 1912-1916 ◽  
Author(s):  
L. Cerutti ◽  
A. Ducanchez ◽  
G. Narcy ◽  
P. Grech ◽  
G. Boissier ◽  
...  
Keyword(s):  
Wavelength Range ◽  
Mid Infrared ◽  
Infrared Wavelength

scholarly journals Silicon-on-Nitride Waveguide With Ultralow Dispersion Over an Octave-Spanning Mid-Infrared Wavelength Range

2012 ◽  
Vol 4 (1) ◽  
pp. 126-132 ◽  
Author(s):  
Yang Yue ◽  
Lin Zhang ◽  
Hao Huang ◽  
R. G. Beausoleil ◽  
A. E. Willner
Keyword(s):  
Wavelength Range ◽  
Mid Infrared ◽  
Infrared Wavelength
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