InAs/Ga0.47In0.53As quantum wells: A new III‐V materials system for light emission in the mid‐infrared wavelength range

1992 ◽  
Vol 61 (23) ◽  
pp. 2808-2810 ◽  
Author(s):  
Eric Tournié ◽  
Klaus H. Ploog ◽  
Claude Alibert
2020 ◽  
Vol 45 (19) ◽  
pp. 5372
Author(s):  
Md. Shamim Mahmud ◽  
Daniel Rosenmann ◽  
David A. Czaplewski ◽  
Jie Gao ◽  
Xiaodong Yang

2007 ◽  
Vol 06 (03n04) ◽  
pp. 241-244 ◽  
Author(s):  
D. A. FIRSOV ◽  
L. E. VOROBJEV ◽  
M. A. BARZILOVICH ◽  
V. YU. PANEVIN ◽  
I. V. MIKHAYLOV ◽  
...  

Optical phenomena in quantum dot and quantum well nanostructures aimed at the development of mid-infrared lasers based on intraband electron transitions are investigated in the conditions of interband optical pumping. Evolution of photoluminescence spectra and interband light absorption with intensity of interband optical excitation is investigated in InAs / GaAs quantum dot structures. Optically induced intersubband mid-infrared light absorption is studied in undoped tunnel-coupled GaAs / AlGaAs quantum wells. The stabilization of the electron concentration at the ground level of tunnel-coupled quantum wells under increasing pumping level is established.


2020 ◽  
Vol 1 (1) ◽  
Author(s):  
Miguel Montesinos-Ballester ◽  
Vladyslav Vakarin ◽  
Joan Manel Ramirez ◽  
Qiankun Liu ◽  
Carlos Alonso-Ramos ◽  
...  

2013 ◽  
Author(s):  
Anbang Fu ◽  
Huaidong Zhang ◽  
Xinyu Zhang ◽  
Hongshi Sang ◽  
Tianyu Zhang ◽  
...  

2015 ◽  
Vol 63 (3) ◽  
pp. 597-603
Author(s):  
Ł. Piskorski ◽  
L. Frasunkiewicz ◽  
R.P. Sarzała

Abstract In the present paper the results of the computer analysis of the GaAs-based and GaSb-based active regions that can be applied in compact semiconductor laser sources of radiation at mid-infrared wavelengths are presented. Quantum well material contents and strain dependencies on the maximal gain are investigated. It is shown that above 3 μm the maximal gain obtained for GaInNAs/AlGaInAs active region is high only for thick, highly-strained GaInNAs QWs with N concentration higher than 2%. Much higher gain in this wavelength range can be obtained for GaInAsSb/AlGaAsSb active region, which offers relatively high gain even at 4.5 μm when the Sb content in GaInAsSb and compressive strain in this layer are equal to 50% and − 2%, respectively.


2010 ◽  
Vol 103 (4) ◽  
pp. 1139-1144 ◽  
Author(s):  
C. Chevallier ◽  
N. Fressengeas ◽  
F. Genty ◽  
J. Jacquet

2009 ◽  
Vol 311 (7) ◽  
pp. 1912-1916 ◽  
Author(s):  
L. Cerutti ◽  
A. Ducanchez ◽  
G. Narcy ◽  
P. Grech ◽  
G. Boissier ◽  
...  

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