Formation of CN x thin films by reactive pulsed laser deposition assisted by electron cyclotron resonance microwave discharge

2001 ◽  
Vol 73 (5) ◽  
pp. 605-608 ◽  
Author(s):  
W. Shi ◽  
J.D. Wu ◽  
J. Sun ◽  
H. Ling ◽  
Z.F. Ying ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Microwave Discharge ◽  
Pulsed Laser ◽  
Electron Cyclotron ◽  
Laser Deposition ◽  
Resonance Microwave

Electron Cyclotron Resonance Plasma-assisted Reactive Pulsed Laser Deposition of Compound Films

2002 ◽  
Vol 17 (7) ◽  
pp. 1692-1697 ◽  
Author(s):  
J. Sun ◽  
J. D. Wu ◽  
H. Ling ◽  
W. Shi ◽  
Z. F. Ying ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Pulsed Laser ◽  
Electron Cyclotron ◽  
Laser Deposition ◽  
Electron Cyclotron Resonance Plasma ◽  
Low Temperature Preparation ◽  
Resonance Plasma

A novel method was developed for low-temperature preparation of thin films. Pulsed laser ablation was combined with electron cyclotron resonance microwave discharge, constituting a novel hybrid film preparation method called electron cyclotron resonance plasma–assisted reactive pulsed laser deposition. We demonstrated the feasibility of the method by preparing compound films of silicon nitride, silicon dioxide, and aluminum nitride from elemental starting materials. The mechanisms responsible for efficient compound formation and film growth are discussed, together with characterization of the prepared films, analysis of the plasma composition, and comparison of the films prepared with and without assistance of the plasma. The unique features of the method make it suitable for one-step preparation of compound thin films at low temperatures.

Growth of KNbO3Films by Electron-Cyclotron-Resonance-Assisted Pulsed Laser Deposition

2003 ◽  
Vol 42 (Part 1, No. 9B) ◽  
pp. 6019-6022 ◽  
Author(s):  
Takashi Arai ◽  
Shigeo Ito ◽  
Kazuo Ishikawa ◽  
Kiyoshi Nakamura
Keyword(s):  
Pulsed Laser Deposition ◽  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Pulsed Laser ◽  
Electron Cyclotron ◽  
Laser Deposition

scholarly journals Composition and bandgap control of AlxGa1−xN films synthesized by plasma-assisted pulsed laser deposition

2015 ◽  
Vol 3 (20) ◽  
pp. 5307-5315 ◽  
Author(s):  
Hua Cai ◽  
Peipei Liang ◽  
René Hübner ◽  
Shengqiang Zhou ◽  
Yanli Li ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Pulsed Laser ◽  
Nitrogen Plasma ◽  
Electron Cyclotron ◽  
Laser Deposition ◽  
Si Substrates

Ternary AlxGa1−xN films with different Al compositions were synthesized on sapphire and Si substrates by pulsed laser co-ablation of a polycrystalline GaAs target and a metallic Al target in nitrogen plasma generated by electron cyclotron resonance discharge of N2 gas.

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