Composition and bandgap control of AlxGa1−xN films synthesized by plasma-assisted pulsed laser deposition
2015 ◽
Vol 3
(20)
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pp. 5307-5315
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Keyword(s):
Ternary AlxGa1−xN films with different Al compositions were synthesized on sapphire and Si substrates by pulsed laser co-ablation of a polycrystalline GaAs target and a metallic Al target in nitrogen plasma generated by electron cyclotron resonance discharge of N2 gas.
1999 ◽
Vol 350
(1-2)
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pp. 101-105
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2003 ◽
Vol 42
(Part 1, No. 9B)
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pp. 6019-6022
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2003 ◽
Vol 20
(3)
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pp. 386-388
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2002 ◽
Vol 11
(9)
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pp. 1623-1628
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2008 ◽
Vol 26
(3)
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pp. 380-384
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2002 ◽
2006 ◽
Vol 24
(3)
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pp. 413-417
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2009 ◽
Vol 11
(4)
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pp. 477-480
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