scholarly journals Composition and bandgap control of AlxGa1−xN films synthesized by plasma-assisted pulsed laser deposition

2015 ◽  
Vol 3 (20) ◽  
pp. 5307-5315 ◽  
Author(s):  
Hua Cai ◽  
Peipei Liang ◽  
René Hübner ◽  
Shengqiang Zhou ◽  
Yanli Li ◽  
...  

Ternary AlxGa1−xN films with different Al compositions were synthesized on sapphire and Si substrates by pulsed laser co-ablation of a polycrystalline GaAs target and a metallic Al target in nitrogen plasma generated by electron cyclotron resonance discharge of N2 gas.

2003 ◽  
Vol 42 (Part 1, No. 9B) ◽  
pp. 6019-6022 ◽  
Author(s):  
Takashi Arai ◽  
Shigeo Ito ◽  
Kazuo Ishikawa ◽  
Kiyoshi Nakamura

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