Influence of the Composition of the Radio-Frequency Sputtering Atmosphere on the Density of States and Interband Light Absorption in thin Y2O3 Films

Author(s):  
O. M. Bordun ◽  
B. O. Bordun ◽  
I. M. Kofliuk ◽  
I. Yo. Kukharskyy ◽  
I. I. Medvid
2021 ◽  
Vol 88 (6) ◽  
pp. 881-886
Author(s):  
O. M. Bordun ◽  
I. O. Bordun ◽  
I. M. Kofliuk ◽  
I. Yo. Kukharskyy ◽  
I. I. Medvid

The long-wavelength edge of the fundamental absorption band of thin Y2O3 films obtained by radiofrequency ion-plasma sputtering is investigated. The edge of interband absorption after annealing of the films in an atmosphere of argon, oxygen, or a mixture of these gases is shown to be approximated well by the Urbach empirical rule. Diffractograms of the obtained films were studied and a model of a heavily doped or defective semiconductor in the quasi-classical approximation was used to analyze the experimental results. This model allows determining the radius of the basic electronic state, the screening radius, and the rootmean-square potential depending on the sputtering atmosphere.


2011 ◽  
Vol 50 ◽  
pp. 01BF04 ◽  
Author(s):  
Ahmed Mohamed Ahmed Abd El-Razek Shamekh ◽  
Norio Tokuda ◽  
Takao Inokuma

1971 ◽  
Vol 21 (4-5) ◽  
pp. 558-562 ◽  
Author(s):  
R. Metselaar ◽  
P. Rem

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