Atomistic simulations for the effects of stacking fault energy on defect formations by displacement cascades in FCC metals under Poisson’s deformation

2019 ◽  
Vol 54 (16) ◽  
pp. 11096-11110 ◽  
Author(s):  
Sho Hayakawa ◽  
Taira Okita ◽  
Mitsuhiro Itakura ◽  
Tomoya Kawabata ◽  
Katsuyuki Suzuki
Keyword(s):  
Stacking Fault ◽  
Stacking Fault Energy ◽  
Atomistic Simulations ◽  
Fcc Metals ◽  
Displacement Cascades

Grain Refinement of High-Purity FCC Metals Using Equal-Channel Angular Pressing

2007 ◽  
Vol 558-559 ◽  
pp. 1273-1278 ◽  
Author(s):  
Z. Horita ◽  
Kaoru Kishikawa ◽  
Keiichi Kimura ◽  
Kohei Tatsumi ◽  
Terence G. Langdon
Keyword(s):  
Equal Channel Angular Pressing ◽  
High Purity ◽  
Stacking Fault ◽  
Stacking Fault Energy ◽  
Grain Refining ◽  
Fcc Metals ◽  
Angular Pressing ◽  
The Difference ◽  
Pure Cu ◽  
Very High

Equal-channel angular pressing (ECAP) is a valuable technique for refining grain sizes to the submicrometer or the nanometer range. This study explores the reason for the difference in the grain refining behavior between pure Al and pure Cu. First, very high purity levels were adopted in order to minimize any effects of impurities: 99.999% for Al and 99.99999% for Cu. Second, high purity (99.999%) Au was also used in order to examine the effect of stacking fault energy. All three pure metals were subjected to ECAP and microstructural observations and hardness measurements were undertaken with respect to the number of ECAP passes. It is concluded that the stacking fault energy plays an important role and accounts for the difference in the grain refining behavior in the ECAP process.

Calculations of stacking fault energy for fcc metals and their alloys based on an improved embedded-atom method

1995 ◽  
Vol 96 (10) ◽  
pp. 729-734 ◽  
Author(s):  
Xiliang Nie ◽  
Renhui Wang ◽  
Yiying Ye ◽  
Yumei Zhou ◽  
Dingsheng Wang
Keyword(s):  
Stacking Fault ◽  
Stacking Fault Energy ◽  
Embedded Atom Method ◽  
Fcc Metals ◽  
Embedded Atom

Molecular Dynamics Simulations to Evaluate the Effect of the Difference in Material Properties on Irradiation-Induced Defect Formation Under Applied Strain

2012 ◽  
Author(s):  
Toshihiro Horinouchi ◽  
Satoshi Miyashiro ◽  
Mitsuhiro Itakura ◽  
Taira Okita
Keyword(s):  
Molecular Dynamics ◽  
Defect Formation ◽  
Stacking Fault ◽  
Applied Strain ◽  
Stacking Fault Energy ◽  
Cascade Process ◽  
Defect Production ◽  
Fcc Metals ◽  
The Difference ◽  
Dynamics Simulations

The influence of applied strain on the defect production rate during a cascade process was evaluated for several FCC metals with different Stacking Fault Energy by the method of molecular dynamics. It was found that applied strain increases the number of surviving defects, which is caused by the enhanced formation of larger clusters. It was also found that the number of defects is almost independent of Stacking Fault Energy even under applied strain.

Screw dislocation–spherical void interactions in fcc metals and their dependence on stacking fault energy

2019 ◽  
Vol 54 (17) ◽  
pp. 11509-11525 ◽  
Author(s):  
Sho Hayakawa ◽  
Kohei Doihara ◽  
Taira Okita ◽  
Mitsuhiro Itakura ◽  
Masaatsu Aichi ◽  
...  
Keyword(s):  
Screw Dislocation ◽  
Stacking Fault ◽  
Stacking Fault Energy ◽  
Spherical Void ◽  
Fcc Metals
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