Nanoscale characterization of the silicon dioxide-silicon carbide interface using elemental mapping by energy-filtered transmission electron microscopy

2003 ◽  
Vol 32 (5) ◽  
pp. 464-469 ◽  
Author(s):  
K. -C. Chang ◽  
J. Bentley ◽  
L. M. Porter
Metals ◽  
2018 ◽  
Vol 8 (10) ◽  
pp. 749 ◽  
Author(s):  
Jun Wu ◽  
Roumen Petrov ◽  
Sebastian Kölling ◽  
Paul Koenraad ◽  
Loic Malet ◽  
...  

Micro- to nano-scale characterization of the microstructures in the white etching layer (WEL), observed in a Dutch R260 Mn grade rail steel, was performed via various techniques. Retained austenite in the WEL was identified via electron backscatter diffraction (EBSD), automatic crystallographic orientation mapping in transmission electron microscopy (ACOM-TEM), and X-ray diffraction (XRD). EBSD and ACOM-TEM methods were used to quantify grains (size range: 50 nm–4 μm) in the WEL. Transmission electron microscopy (TEM) was used to identify complex heterogeneous microstructural morphologies in the WEL: Nano-twinning substructure with high dislocation density in the WEL close to the rail surface and untransformed cementite and dislocations in the WEL close to the pearlite matrix. Furthermore, atom probe tomography (APT) revealed a heterogeneous through-thickness distribution of alloying elements in the WEL. Accordingly, the WEL is considered a multi-layered martensitic microstructure. These findings are supported by the temperature calculations from the shape analysis of the manganese profile from APT measurements, related to manganese diffusion. The deformation characteristics of the WEL and the pearlite beneath the WEL are discussed based on the EBSD measurements. The role of deformation in the martensitic phase transformation for WEL formation is discussed.


2010 ◽  
Vol 645-648 ◽  
pp. 379-382
Author(s):  
Bralee Chayasombat ◽  
Y. Kimata ◽  
T. Kato ◽  
Tomoharu Tokunaga ◽  
Katsuhiro Sasaki ◽  
...  

Microstructures of switch-back epitaxy cubic silicon carbide (3C-SiC) before and after Al ion implantation were investigated by transmission electron microscopy (TEM). Stacking faults aligned along the {111} were observed in 3C-SiC. A surface bulge was observed in some regions and planar defects were observed under the bulge region. After ion implantation of 3C-SiC, defects were observed to be distributed up to a depth approximately 500 nm from the surface.


2010 ◽  
Vol 645-648 ◽  
pp. 175-178 ◽  
Author(s):  
Remigijus Vasiliauskas ◽  
Maya Marinova ◽  
Mikael Syväjärvi ◽  
Alkyoni Mantzari ◽  
Ariadne Andreadou ◽  
...  

Epitaxial growth of cubic silicon carbide on 6H-SiC substrates, and 6H-SiC substrates with (111) 3C-SiC buffer layer, deposited by vapour liquid solid mechanism, was compared. The morphological details of the grown layers were studied by optical microscopy and their microstructure by transmission electron microscopy. The influence of the substrate on the nucleation of 3C-SiC, the initial homoepitaxial 6H-SiC nucleation before 3C-SiC as well as the formation of defects, are discussed.


2016 ◽  
Vol 120 (8) ◽  
pp. 085301 ◽  
Author(s):  
Sahar Hihath ◽  
Melissa K. Santala ◽  
Geoffrey Campbell ◽  
Klaus van Benthem

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