On adsorption of aluminium and methyl groups on silica for TMA/H2O process in atomic layer deposition of aluminium oxide nano layers

Ultra-thin aluminium oxide was grown on a rutile titanium dioxide surface by atomic layer deposition using trimethylaluminium and water precursors. XPS measurements were made during the growth process at near-ambient pressures.

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Surface and sub-surface reactions during low temperature aluminium oxide atomic layer deposition on fiber-forming polymers

Journal of Materials Chemistry ◽

10.1039/c0jm00355g ◽

2010 ◽

Vol 20 (20) ◽

pp. 4213 ◽

Cited By ~ 112

Author(s):

Joseph C. Spagnola ◽

Bo Gong ◽

Sara A. Arvidson ◽

Jesse S. Jur ◽

Saad A. Khan ◽

...

Keyword(s):

Low Temperature ◽

Atomic Layer Deposition ◽

Surface Reactions ◽

Aluminium Oxide ◽

Atomic Layer ◽

Layer Deposition

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Characterising aluminium oxide barrier layers on flexible substrates deposited by atomic layer deposition

Materials Research Innovations ◽

10.1179/1432891714z.000000000596 ◽

2014 ◽

Vol 18 (sup3) ◽

pp. S3-38-S3-41

Author(s):

R.-C. Chang ◽

H.-T. Hou ◽

F.-T. Tsai ◽

P.-S. Jhu

Keyword(s):

Atomic Layer Deposition ◽

Aluminium Oxide ◽

Atomic Layer ◽

Flexible Substrates ◽

Barrier Layers ◽

Layer Deposition ◽

Oxide Barrier

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Tribological study of hafnium dioxide and aluminium oxide films grown by atomic layer deposition on glass substrate

Thin Solid Films ◽

10.1016/j.tsf.2020.138191 ◽

2020 ◽

Vol 709 ◽

pp. 138191

Author(s):

R. Pietruszka ◽

B.S. Witkowski ◽

S. Zimowski ◽

T. Stapinski ◽

M. Godlewski

Keyword(s):

Atomic Layer Deposition ◽

Glass Substrate ◽

Oxide Films ◽

Aluminium Oxide ◽

Atomic Layer ◽

Hafnium Dioxide ◽

Tribological Study ◽

Layer Deposition

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Copper nanoparticles deposited inside the pores of anodized aluminium oxide using atomic layer deposition

Materials Science and Engineering C ◽

10.1016/j.msec.2003.09.139 ◽

2003 ◽

Vol 23 (6-8) ◽

pp. 823-826 ◽

Cited By ~ 32

Author(s):

A. Johansson ◽

T. Törndahl ◽

L.M. Ottosson ◽

M. Boman ◽

J.-O. Carlsson

Keyword(s):

Atomic Layer Deposition ◽

Copper Nanoparticles ◽

Aluminium Oxide ◽

Atomic Layer ◽

Layer Deposition

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Electrical Properties of Aluminium Oxide Films Grown by Atomic Layer Deposition on n-Type 4H-SiC

Materials Science Forum - Silicon Carbide and Related Materials 2004 ◽

10.4028/0-87849-963-6.705 ◽

2005 ◽

pp. 705-708

Author(s):

Marc Avice ◽

Ulrike Grossner ◽

Edouard V. Monakhov ◽

Joachim Grillenberger ◽

Ola Nilsen ◽

...

Keyword(s):

Electrical Properties ◽

Atomic Layer Deposition ◽

Oxide Films ◽

Aluminium Oxide ◽

Atomic Layer ◽

Layer Deposition

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MOCVD Compatible Atomic Layer Deposition Process of Al2O3 on SiC and Graphene/SiC Heterostructures

Materials Science Forum ◽

10.4028/www.scientific.net/msf.924.506 ◽

2018 ◽

Vol 924 ◽

pp. 506-510

Author(s):

Marco Eckstein ◽

Christian Koppka ◽

Sebastian Thiele ◽

Yan Mi ◽

Rui Xu ◽

...

Keyword(s):

Silicon Carbide ◽

Atomic Layer Deposition ◽

Aluminium Oxide ◽

Atomic Layer ◽

Deposition Process ◽

Oxide Layers ◽

Atomic Layer Deposition Process ◽

Layer Deposition ◽

High K ◽

Silicon Silicon

Aluminium oxide was deposited on silicon, silicon carbide and epitaxial graphene grown on silicon carbide by atomic layer deposition using a standard MOCVD equipment. The morphology and the electrical properties of the aluminium oxide layers on both substrates were determined and compared to aluminium oxide layers deposited with a standard atomic layer deposition equipment. The high-k material fabricated with the developed MOCVD process show comparable or better properties compared to the standard atomic layer deposition process.

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Interface engineering of graphene–silicon Schottky junction solar cells with an Al2O3 interfacial layer grown by atomic layer deposition

RSC Advances ◽

10.1039/c7ra13443f ◽

2018 ◽

Vol 8 (19) ◽

pp. 10593-10597 ◽

Cited By ~ 7

Author(s):

Aaesha Alnuaimi ◽

Ibraheem Almansouri ◽

Irfan Saadat ◽

Ammar Nayfeh

Keyword(s):

Solar Cells ◽

Atomic Layer Deposition ◽

Interfacial Layer ◽

Aluminium Oxide ◽

Atomic Layer ◽

Schottky Junction ◽

Interface Engineering ◽

Layer Deposition ◽

Improved Performance

One approach to improve Gr/Si SBSC performance is engineering the interface with an interfacial layer. We demonstrate the improved performance of Gr/Si SBSC upon engineering the interface with an aluminium oxide (Al2O3) layer grown by atomic layer deposition (ALD)..

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