scholarly journals Precision of fiducial marker alignment for correlative super‐resolution fluorescence and transmission electron microscopy

2021 ◽  
Vol 1 (1) ◽  
Author(s):  
Adeeba Fathima ◽  
César Augusto Quintana-Cataño ◽  
Christoph Heintze ◽  
Michael Schlierf
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Single Molecule ◽  
Fluorescent Proteins ◽  
Light And Electron Microscopy ◽  
Super Resolution ◽  
Specific Protein ◽  
Fiducial Markers ◽  
Transmission Electron ◽  
Microscopy Techniques

AbstractRecent advances in microscopy techniques enabled nanoscale discoveries in biology. In particular, electron microscopy reveals important cellular structures with nanometer resolution, yet it is hard, and sometimes impossible to resolve specific protein localizations. Super-resolution fluorescence microscopy techniques developed over the recent years allow for protein-specific localization with ~ 20 nm precision are overcoming this limitation, yet it remains challenging to place those in cells without a reference frame. Correlative light and electron microscopy (CLEM) approaches have been developed to place the fluorescence image in the context of a cellular structure. However, combining imaging methods such as super resolution microscopy and transmission electron microscopy necessitates a correlation using fiducial markers to locate the fluorescence on the structures visible in electron microscopy, with a measurable precision. Here, we investigated different fiducial markers for super-resolution CLEM (sCLEM) by evaluating their shape, intensity, stability and compatibility with photoactivatable fluorescent proteins as well as the electron density. We further carefully determined limitations of correlation accuracy. We found that spectrally-shifted FluoSpheres are well suited as fiducial markers for correlating single-molecule localization microscopy with transmission electron microscopy.

Dual responsive specifically labelled carbogenic fluorescent nanodots for super resolution and electron microscopy

Nanoscale ◽  
2019 ◽  
Vol 11 (14) ◽  
pp. 6561-6565 ◽  
Author(s):  
Navneet. C. Verma ◽  
Chethana Rao ◽  
Ashutosh Singh ◽  
Neha Garg ◽  
Chayan K. Nandi
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Single Molecule ◽  
Super Resolution ◽  
Dual Responsive ◽  
Stochastic Optical Reconstruction Microscopy ◽  
Transmission Electron ◽  
Optical Reconstruction

We introduce an orange emissive fluorescent nanodot for successful single molecule stochastic optical reconstruction microscopy (STORM), super resolution radial fluctuation (SRRF) microscopy and transmission electron microscopy (TEM).

Stress Relaxation Behavior of GH4169 Alloy

2020 ◽  
Vol 1013 ◽  
pp. 52-58
Author(s):  
Xu Dong Lu ◽  
Song Yi Shi ◽  
Bo Wen ◽  
Ya Wei Zhang ◽  
Jin Hui Du
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Stress Relaxation ◽  
Initial Stress ◽  
Relaxation Behavior ◽  
Stress Relaxation Behavior ◽  
Transmission Electron ◽  
Microscopy Techniques ◽  
The Relationship ◽  
Gh4169 Alloy

The relaxation properties of GH4169 alloy were studied contrastively at temperatures ranging from 600 oC to 700 °C and initial stress ranging from 550 MPa to 850 MPa. The relationship between the microstructure and relaxation behavior was evaluated using transmission electron microscopy techniques. It was found that the relaxation limit and relaxation stability of the alloy decreased obviously with the increase of temperature. Further investigations show that the relaxation behavior is mainly depend on both precipitate characteristics and its interaction with dislocations. The alloy with higher strength lever has more excellent stress relaxation stability, because of the inhibition of a large number subgrains on dislocations motion.

The Starting Members of the Series Pr4n+2(C2)nBr5n+5 (n = 1, 2, 3)

2009 ◽  
Vol 64 (8) ◽  
pp. 922-928 ◽  
Author(s):  
Manuel Christian Schaloske ◽  
Hansjürgen Mattausch ◽  
Viola Duppel ◽  
Lorenz Kienle ◽  
Arndt Simon
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Single Crystals ◽  
Lattice Parameters ◽  
Space Group ◽  
X Ray ◽  
Transmission Electron ◽  
General Series ◽  
Microscopy Techniques

The compounds Pr6(C2)Br10, Pr10(C2)2Br15 and Pr14(C2)3Br20 were prepared from PrBr3 and the appropriate amounts of Pr and C and characterized by X-ray structure analyses of single crystals. All three compounds crystallize in space group P1 with lattice parameters a = 7.571(2), b = 9.004(2), c = 9.062(2) Å ,α = 108.57(3), β = 97.77(3), γ = 106.28(3)◦ for Pr6(C2)Br10; a = 9.098(2), b = 10.127(2), c = 10.965(2) A° , α = 70.38(3), β = 66.31(3), γ = 70.84(3)◦ for Pr10(C2)2Br15; a = 9.054(2), b = 10.935(2), c = 13.352(3) Å , α = 86.27(3), β = 72.57(3), γ = 66.88(3)◦ for Pr14(C2)3Br20. They are members of a general series Ln4n+2(C2)nBr5n+5 and isostructural with the corresponding iodides known for Ln = La, Ce, Pr. Pr6(C2)Br10 was further characterized via transmission electron microscopy techniques

The Creation and Annealing of Heavy Ion Damage in Silicon

1987 ◽  
Vol 93 ◽  
Author(s):  
L. M. Howe ◽  
M. H. Rainville
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Spatial Distribution ◽  
High Resolution ◽  
Heavy Ion ◽  
High Energy ◽  
Transmission Electron ◽  
Ion Damage ◽  
Deposited Energy ◽  
Microscopy Techniques

ABSTRACTHigh resolution transmission electron microscopy techniques have been used to obtain information on the contrast, spatial distribution, size and annealing behaviour of the damaged regions produced within individual collision cascades by heavy ion (As, Sb and Bi) bombardment (10–120 KeV) of silicon with 1.0 × 1011 – 6.0 × 1011 ions cm−2. The fraction of the theoretical cascade volume occupied by a heavily damaged region steadily increased as the average deposited energy density within the cascade increased. At high energy densities, the visible damage produced in the main cascade consisted of a single, isolated damaged region. With decreasing values of (i.e. increasing ion implant energies), there was an increasing tendency for multiple damaged regions to be produced within the main cascade.

Role of Electron Microscopy in Semiconductor Electronic Defects Analysis

1985 ◽  
Vol 46 ◽  
Author(s):  
P. M. Petroff
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Transmission Electron ◽  
Semiconductor Electronic ◽  
Scanning Transmission ◽  
Electronic Defect ◽  
Defects Analysis ◽  
Microscopy Techniques ◽  
Electronic Defects

AbstractA review of the Transmission Electron Microscopy and Scanning Transmission Electron Microscopy techniques used for electronic defect identification is presented. The structural, chemical and STEM based spectroscopy methods for electronic defect analysis are discussed along with selected examples.

scholarly journals Elastic distortion determining conduction in BiFeO3 phase boundaries

RSC Advances ◽  
2020 ◽  
Vol 10 (47) ◽  
pp. 27954-27960
Author(s):  
Kristina M. Holsgrove ◽  
Martial Duchamp ◽  
M. Sergio Moreno ◽  
Nicolas Bernier ◽  
Aaron B. Naden ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Scanning Transmission Electron Microscopy ◽  
Mixed Phase ◽  
Phase Boundaries ◽  
Conducting Phase ◽  
Transmission Electron ◽  
Scanning Transmission ◽  
Elastic Distortion ◽  
Microscopy Techniques

The localized crystallography of conducting and non-conducting phase boundaries in mixed-phase BiFeO3 is directly compared using scanning transmission electron microscopy techniques.

An improved and simplified protocol to combine Golgi-Cox staining with immunofluorescence and transmission electron microscopy techniques

2021 ◽  
Vol 142 ◽  
pp. 104922
Author(s):  
Matteo Pedrazzoli ◽  
Manuela Medelin ◽  
Federica Marchiotto ◽  
Barbara Cisterna ◽  
Manuela Malatesta ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Transmission Electron ◽  
Microscopy Techniques
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