Two-step MOVPE growth for planar InP/InGaAs/InP pin-FET combinations with locally diffused buffer layer

1991 ◽  
Vol 107 (1-4) ◽  
pp. 840-844
Author(s):  
G. Ebbinghaus ◽  
R. Strzoda ◽  
T. Scherg ◽  
H. Albrecht ◽  
R. Penz ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Movpe Growth

MOVPE growth of thick homogeneous InGaN directly on sapphire substrate using AlN buffer layer

1997 ◽  
Vol 41 (2) ◽  
pp. 145-147 ◽  
Author(s):  
Masaya Shimizu ◽  
Yasutoshi Kawaguchi ◽  
Kazumasa Hiramatsu ◽  
Nobuhiko Sawaki
Keyword(s):  
Buffer Layer ◽  
Sapphire Substrate ◽  
Movpe Growth ◽  
Aln Buffer

Low-temperature MOVPE growth of ZnO thin films by using a buffer layer

2006 ◽  
Vol 252 (16) ◽  
pp. 5926-5929 ◽  
Author(s):  
W.Z. Xu ◽  
Z.Z. Ye ◽  
L. Jiang ◽  
Y.J. Zeng ◽  
L.P. Zhu ◽  
...  
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Buffer Layer ◽  
Zno Thin Films ◽  
Movpe Growth

MOVPE growth of GaAs on Ge substrates by inserting a thin low temperature buffer layer

2006 ◽  
Vol 41 (2) ◽  
pp. 111-116 ◽  
Author(s):  
S. Scholz ◽  
J. Bauer ◽  
G. Leibiger ◽  
H. Herrnberger ◽  
D. Hirsch ◽  
...  
Keyword(s):  
Low Temperature ◽  
Buffer Layer ◽  
Movpe Growth

MOVPE growth of GaN on Si substrate with 3C-SiC buffer layer

2014 ◽  
Vol 53 (5S1) ◽  
pp. 05FL09 ◽  
Author(s):  
Masayoshi Katagiri ◽  
Hao Fang ◽  
Hideto Miyake ◽  
Kazumasa Hiramatsu ◽  
Hidehiko Oku ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Si Substrate ◽  
Movpe Growth ◽  
Gan On Si

MOVPE growth of InAsN films on GaAs(001) substrates with an InAs buffer layer

2006 ◽  
Vol 243 (7) ◽  
pp. 1411-1415 ◽  
Author(s):  
S. Kuboya ◽  
F. Nakajima ◽  
R. Katayama ◽  
K. Onabe
Keyword(s):  
Buffer Layer ◽  
Movpe Growth

In-Situ Study of NiO Growth on Textured Nickel Tape Using Environmental Scanning Electron Microscope (ESEM) and Hot Stage

2001 ◽  
Vol 7 (S2) ◽  
pp. 1276-1277
Author(s):  
Y. Akin ◽  
R.E. Goddard ◽  
W. Sigmund ◽  
Y.S. Hascicek
Keyword(s):  
Buffer Layer ◽  
Lattice Mismatch ◽  
Sol Gel ◽  
Surface Oxidation ◽  
Dip Coating ◽  
Buffer Layers ◽  
Superconducting Film ◽  
Environmental Scanning ◽  
Cold Rolling And Annealing

Deposition of highly textured ReBa2Cu3O7−δ (RBCO) films on metallic substrates requires a buffer layer to prevent chemical reactions, reduce lattice mismatch between metallic substrate and superconducting film layer, and to prevent diffusion of metal atoms into the superconductor film. Nickel tapes are bi-axially textured by cold rolling and annealing at appropriate temperature (RABiTS) for epitaxial growth of YBa2Cu3O7−δ (YBCO) films. As buffer layers, several oxide thin films and then YBCO were coated on bi-axially textured nickel tapes by dip coating sol-gel process. Biaxially oriented NiO on the cube-textured nickel tape by a process named Surface-Oxidation- Epitaxy (SEO) has been introduced as an alternative buffer layer. in this work we have studied in situ growth of nickel oxide by ESEM and hot stage.Representative cold rolled nickel tape (99.999%) was annealed in an electric furnace under 4% hydrogen-96% argon gas mixture at 1050°C to get bi-axially textured nickel tape.

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