Oxygen incorporation and precipitation behavior in heavily boron-doped Czochralski silicon crystals

1995 ◽  
Vol 147 (1-2) ◽  
pp. 55-63 ◽  
Author(s):  
Kwang Su Choe
Keyword(s):  
Precipitation Behavior ◽  
Czochralski Silicon ◽  
Oxygen Incorporation ◽  
Silicon Crystals ◽  
Boron Doped

Oxygen concentration in Czochralski silicon crystals depending on silicon monoxide evaporation from boron doped silicon melts

1998 ◽  
Vol 192 (1-2) ◽  
pp. 117-124 ◽  
Author(s):  
Susumu Maeda ◽  
Keisei Abe ◽  
Masaki Kato ◽  
Hideo Nakanishi ◽  
Keigo Hoshikawa ◽  
...  
Keyword(s):  
Oxygen Concentration ◽  
Silicon Monoxide ◽  
Czochralski Silicon ◽  
Silicon Crystals ◽  
Boron Doped ◽  
Doped Silicon

Evolution of flow pattern defects in boron-doped 〈100〉 Czochralski silicon crystals during secco etching procedure

2004 ◽  
Vol 269 (2-4) ◽  
pp. 310-316 ◽  
Author(s):  
Jianfeng Zhang ◽  
Caichi Liu ◽  
Qigang Zhou ◽  
Jing Wang ◽  
Qiuyan Hao ◽  
...  
Keyword(s):  
Flow Pattern ◽  
Czochralski Silicon ◽  
Silicon Crystals ◽  
Boron Doped

Oxygen Precipitation in Conventional and Nitrogen Co-Doped Heavily Arsenic-Doped Czochralski Silicon Crystals: Oswald Ripening

2009 ◽  
Vol 156-158 ◽  
pp. 275-278
Author(s):  
Xiang Yang Ma ◽  
Yan Feng ◽  
Yu Heng Zeng ◽  
De Ren Yang
Keyword(s):  
High Temperature ◽  
Low Temperature ◽  
Czochralski Silicon ◽  
Silicon Crystals ◽  
Oxygen Precipitation ◽  
High Temperature Anneal ◽  
Oxygen Precipitates ◽  
Co Doped ◽  
Oswald Ripening

Oxygen precipitation (OP) behaviors in conventional and nitrogen co-doped heavily arsenic-doped Czocharalski silicon crystals subjected to low-high two-step anneals of 650 oC/8 h + 1000 oC/4-256 h have been comparatively investigated. Due to the nitrogen enhanced nucleation of OP during the low temperature anneal, much higher density of oxygen precipitates generated in the nitrogen co-doped specimens. With the extension of high temperature anneal, Oswald ripening of OP in the nitrogen co-doped specimens preceded that in the conventional ones. Moreover, due to the Oswald ripening effect, the oxygen precipitates in the conventional specimens became larger with a wider range of sizes. While, the sizes of oxygen precipitates in the nitrogen co-doped specimens distributed in a much narrower range with respect to the conventional ones.

Oxygen precipitation behavior in heavily arsenic doped silicon crystals

2017 ◽  
Vol 457 ◽  
pp. 325-330 ◽  
Author(s):  
Stephan Haringer ◽  
Daniela Gambaro ◽  
Maria Porrini
Keyword(s):  
Precipitation Behavior ◽  
Silicon Crystals ◽  
Oxygen Precipitation ◽  
Doped Silicon

Oxygen‐induced recombination centers in as‐grown Czochralski silicon crystals

1983 ◽  
Vol 43 (3) ◽  
pp. 241-243 ◽  
Author(s):  
K. Nauka ◽  
H. C. Gatos ◽  
J. Lagowski
Keyword(s):  
Czochralski Silicon ◽  
Silicon Crystals ◽  
Recombination Centers
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