Impact of Rapid Thermal Oxidation at Ultrahigh-Temperatures on Oxygen Precipitation Behavior in Czochralski-Silicon Crystals II

2014 ◽  
Vol 3 (9) ◽  
pp. P114-P115 ◽  
Author(s):  
K. Araki ◽  
S. Maeda ◽  
H. Sudo ◽  
T. Aoki ◽  
K. Izunome
Keyword(s):  
Thermal Oxidation ◽  
Precipitation Behavior ◽  
Czochralski Silicon ◽  
Rapid Thermal Oxidation ◽  
Silicon Crystals ◽  
Oxygen Precipitation

Oxygen Precipitation in Conventional and Nitrogen Co-Doped Heavily Arsenic-Doped Czochralski Silicon Crystals: Oswald Ripening

2009 ◽  
Vol 156-158 ◽  
pp. 275-278
Author(s):  
Xiang Yang Ma ◽  
Yan Feng ◽  
Yu Heng Zeng ◽  
De Ren Yang
Keyword(s):  
High Temperature ◽  
Low Temperature ◽  
Czochralski Silicon ◽  
Silicon Crystals ◽  
Oxygen Precipitation ◽  
High Temperature Anneal ◽  
Oxygen Precipitates ◽  
Co Doped ◽  
Oswald Ripening

Oxygen precipitation (OP) behaviors in conventional and nitrogen co-doped heavily arsenic-doped Czocharalski silicon crystals subjected to low-high two-step anneals of 650 oC/8 h + 1000 oC/4-256 h have been comparatively investigated. Due to the nitrogen enhanced nucleation of OP during the low temperature anneal, much higher density of oxygen precipitates generated in the nitrogen co-doped specimens. With the extension of high temperature anneal, Oswald ripening of OP in the nitrogen co-doped specimens preceded that in the conventional ones. Moreover, due to the Oswald ripening effect, the oxygen precipitates in the conventional specimens became larger with a wider range of sizes. While, the sizes of oxygen precipitates in the nitrogen co-doped specimens distributed in a much narrower range with respect to the conventional ones.

Oxygen precipitation behavior in heavily arsenic doped silicon crystals

2017 ◽  
Vol 457 ◽  
pp. 325-330 ◽  
Author(s):  
Stephan Haringer ◽  
Daniela Gambaro ◽  
Maria Porrini
Keyword(s):  
Precipitation Behavior ◽  
Silicon Crystals ◽  
Oxygen Precipitation ◽  
Doped Silicon

Enhancement of oxygen precipitation in quenched Czochralski silicon crystals

1989 ◽  
Vol 66 (8) ◽  
pp. 3958-3960 ◽  
Author(s):  
Akito Hara ◽  
Tetsuo Fukuda ◽  
Toru Miyabo ◽  
Iesada Hirai
Keyword(s):  
Czochralski Silicon ◽  
Silicon Crystals ◽  
Oxygen Precipitation

Influence of Grown-in Hydrogen on Thermal Donor Formation and Oxygen Precipitation in Czochralski Silicon Crystals

1994 ◽  
Vol 33 (Part 1, No. 10) ◽  
pp. 5577-5584 ◽  
Author(s):  
Akito Hara ◽  
Masaaki Koizuka ◽  
Masaki Aoki ◽  
Tetsuo Fukuda ◽  
Hiroshi Yamada-Kaneta ◽  
...  
Keyword(s):  
Czochralski Silicon ◽  
Thermal Donor ◽  
Silicon Crystals ◽  
Oxygen Precipitation ◽  
Donor Formation
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