On the characterization of sulfur species on sulfide mineral surfaces by X-ray photoelectron spectroscopy and Raman spectroscopy

1994 ◽  
Vol 370 (1-2) ◽  
pp. 295-296 ◽  
Author(s):  
A.N. Buckley ◽  
R. Woods
1992 ◽  
Vol 293 ◽  
Author(s):  
B.V.R. Chowdari ◽  
K.L. Tan ◽  
W.T. Chia

AbstractThe conductivity of the Li2O:P2O5:MO3 (M = Cr2, Mo, W) glasses increases as P2O5 is progressively substituted by MO3 and as the Li2O content increases. Amongst the glass compositions studied, the 0.50Li2O:0.20P2O5:0.30WO3 glass has the highest conductivity at 25°C of 2. 1×10−6 ×−1 cm−1. The glass transition temperature of the glasses increases initially with network former substitution, reaches a maximum at around MO3/P2O5 = 1, and decreases with further substitution. X-ray photoelectron spectroscopy reveals the presence of M ions in more than one oxidation state and oxygen species such as P=O, P-O-P, P-O, M-O-M, M-O and P-O-M. Raman spectroscopy shows that the Li2O:P2O5:MoO3 and Li2O:P2O5:WO3 glasses consist of PO4, MoO4 (WO4) and MoO6 (WO6) polyhedra while the Li2O:P2O5:Cr2O3 glasses consist of the PO4 and CrO6 polyhedra only. The phosphate groups are preferentially modified by Li2O in comparison with the tungstate, molybdate and chromate groups. The increasing number of non-bridging oxygen atoms per phosphate group may be related to the increasing conductivity with the progressive substitution of MO3 for P2O5.


2009 ◽  
Vol 71-73 ◽  
pp. 485-488 ◽  
Author(s):  
Keiko Sasaki ◽  
Koichiro Takatsugi ◽  
Tsuyoshi Hirajima ◽  
Naofumi Kozai ◽  
Toshihiko Ohnuki ◽  
...  

Acidithiobacillus ferrooxidans was acclimatized to 1000 mg/L arsenic(V) and then used for the bioleaching of enargite (Cu3AsS4) at pH 2. Secondary minerals formed during the bioleaching of enargite were characterized by X-ray diffraction, FT- infrared spectroscopy, Raman spectroscopy and X-ray photoelectron spectroscopy. Oxidative dissolution of enargite resulted in the formation of elemental sulfur, arsenate and oxidized sulfur species including jarosites and possibly also schwertmannite at pH 2.


2003 ◽  
Vol 107 (41) ◽  
pp. 11475-11484 ◽  
Author(s):  
Benjaram M. Reddy ◽  
Ataullah Khan ◽  
Yusuke Yamada ◽  
Tetsuhiko Kobayashi ◽  
Stéphane Loridant ◽  
...  

1992 ◽  
Vol 270 ◽  
Author(s):  
Haojie Yuan ◽  
R. Stanley Williams

ABSTRACTThin films of pure germanium-carbon alloys (GexC1−x with x ≈ 0.0, 0.2, 0.4, 0.5, 0.6, 0.8, 1.0) have been grown on Si(100) and A12O3 (0001) substrates by pulsed laser ablation in a high vacuum chamber. The films were analyzed by x-ray θ-2θ diffraction (XRD), x-ray photoelectron spectroscopy (XPS), Auger electron spectroscopy (AES), conductivity measurements and optical absorption spectroscopy. The analyses of these new materials showed that films of all compositions were amorphous, free of contamination and uniform in composition. By changing the film composition, the optical band gap of these semiconducting films was varied from 0.00eV to 0.85eV for x = 0.0 to 1.0 respectively. According to the AES results, the carbon atoms in the Ge-C alloy thin film samples has a bonding configuration that is a mixture of sp2 and sp3 hybridizations.


2014 ◽  
Vol 34 (3) ◽  
pp. 841-849 ◽  
Author(s):  
M. Kanuchova ◽  
L. Kozakova ◽  
M. Drabova ◽  
M. Sisol ◽  
A. Estokova ◽  
...  

2003 ◽  
Vol 18 (5) ◽  
pp. 1123-1130 ◽  
Author(s):  
V. Oliveira ◽  
R. Vilar

This paper aims to contribute to the understanding of column formation mechanisms in Al2O3–TiC ceramics micromachined using excimer lasers. Chemical and structural characterization of columns grown in Al2O3–TiC composite processed with 200 KrF laser pulses at 10 J/cm2 was carried out by scanning electron microscopy, transmission electron microscopy, x-ray photoelectron spectroscopy, and x-ray diffraction analysis. Fully developed columns consist of a core of unprocessed material surrounded by an outer layer of Al2TiO5, formed in oxidizing conditions, and an inner layer, formed in reducing conditions, composed of TiC and Al3Ti or an AlTi solid solution. Possible mechanisms of column formation are discussed.


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