An optimal annealing technique for ohmic contacts to ion-implanted n-layers in semi-insulating indium phosphide

1987 ◽  
Vol 30 (3) ◽  
pp. 253-258 ◽  
Author(s):  
K.P. Pande ◽  
E. Martin ◽  
D. Gutierrez ◽  
O. Aina
Keyword(s):  
Indium Phosphide ◽  
Ohmic Contacts ◽  
Ion Implanted

Improved electrical characterization of Al–Ti ohmic contacts on p-type ion implanted 6H-SiC

2003 ◽  
Vol 18 (6) ◽  
pp. 554-559 ◽  
Author(s):  
F Moscatelli ◽  
A Scorzoni ◽  
A Poggi ◽  
G C Cardinali ◽  
R Nipoti
Keyword(s):  
Ohmic Contacts ◽  
Electrical Characterization ◽  
P Type ◽  
Ion Implanted

Ion-implanted high microwave power indium phosphide transistors

1989 ◽  
Vol 37 (9) ◽  
pp. 1321-1326 ◽  
Author(s):  
M.D. Biedenbender ◽  
V.J. Kapoor ◽  
L.J. Messick ◽  
R. Nguyen
Keyword(s):  
Indium Phosphide ◽  
Microwave Power ◽  
Ion Implanted

Laser annealing of ion-implanted indium phosphide

1979 ◽  
Author(s):  
A. G. Cullis ◽  
H. C. Webber ◽  
D. S. Robertson
Keyword(s):  
Indium Phosphide ◽  
Laser Annealing ◽  
Ion Implanted

Deep submicron AlGaN/GaN HEMTs with ion implanted source/drain regions and non-alloyed ohmic contacts

2007 ◽  
Vol 43 (25) ◽  
pp. 1466 ◽  
Author(s):  
Y. Pei ◽  
F. Recht ◽  
N. Fichtenbaum ◽  
S. Keller ◽  
S.P. DenBaars ◽  
...  
Keyword(s):  
Ohmic Contacts ◽  
Deep Submicron ◽  
Gan Hemts ◽  
Ion Implanted

Electrical characterization of TiC ohmic contacts to aluminum ion implanted 4H–silicon carbide

2000 ◽  
Vol 77 (10) ◽  
pp. 1478-1480 ◽  
Author(s):  
S.-K. Lee ◽  
C.-M. Zetterling ◽  
E. Danielsson ◽  
M. Östling ◽  
J.-P. Palmquist ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Ohmic Contacts ◽  
Electrical Characterization ◽  
Aluminum Ion ◽  
Ion Implanted

Ohmic contacts to lightly doped n and p indium phosphide surfaces

1981 ◽  
Vol 19 (3) ◽  
pp. 623-625 ◽  
Author(s):  
W. Tseng ◽  
A. Christou ◽  
H. Day ◽  
J. Davey ◽  
B. Wilkins
Keyword(s):  
Indium Phosphide ◽  
Ohmic Contacts
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