Ion-implanted high microwave power indium phosphide transistors

IEEE Transactions on Microwave Theory and Techniques ◽

10.1109/22.32214 ◽

1989 ◽

Vol 37 (9) ◽

pp. 1321-1326 ◽

Author(s):

M.D. Biedenbender ◽

V.J. Kapoor ◽

L.J. Messick ◽

R. Nguyen

Keyword(s):

Indium Phosphide ◽

Microwave Power ◽

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Laser annealing of ion-implanted indium phosphide

10.1063/1.31733 ◽

1979 ◽

Author(s):

A. G. Cullis ◽

H. C. Webber ◽

D. S. Robertson

Keyword(s):

Indium Phosphide ◽

Laser Annealing ◽

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Diffusion of zinc into ion implanted iron doped indium phosphide

Microelectronics Reliability ◽

10.1016/0026-2714(84)90617-6 ◽

1984 ◽

Vol 24 (3) ◽

pp. 596

Keyword(s):

Indium Phosphide ◽

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Ultrafast carrier trapping in high energy ion implanted indium phosphide

12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002. ◽

10.1109/sim.2002.1242760 ◽

2005 ◽

Author(s):

C. Camody ◽

H. Boudinov ◽

H.H. Tan ◽

C. Jagadish ◽

L.V. Dao ◽

...

Keyword(s):

Indium Phosphide ◽

High Energy ◽

Carrier Trapping ◽

Ultrafast Carrier ◽

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The effect of implant temperature on the electrical characteristics of ion implanted indium phosphide

Solid-State Electronics ◽

10.1016/0038-1101(80)90059-3 ◽

1980 ◽

Vol 23 (9) ◽

pp. 943-948 ◽

Author(s):

J.P. Donnelly ◽

C.E. Hurwitz

Keyword(s):

Indium Phosphide ◽

Electrical Characteristics ◽

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ChemInform Abstract: ANODIC OXIDATION AND ELECTRICAL CARRIER CONCENTRATION PROFILES OF ION-IMPLANTED INDIUM PHOSPHIDE

Chemischer Informationsdienst ◽

10.1002/chin.197915015 ◽

1979 ◽

Vol 10 (15) ◽

Author(s):

J. P. LORENZO ◽

D. E. DAVIES ◽

T. G. RYAN

Keyword(s):

Indium Phosphide ◽

Carrier Concentration ◽

Anodic Oxidation ◽

Concentration Profiles ◽

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An optimal annealing technique for OHMIC contacts to ion-implanted in semi-insulating indium phosphide

Microelectronics Reliability ◽

10.1016/0026-2714(87)90430-6 ◽

1987 ◽

Vol 27 (5) ◽

pp. 942

Keyword(s):

Indium Phosphide ◽

Ohmic Contacts ◽

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Electrical and optical properties of MeV As and P ion implanted and annealed indium phosphide

2000 International Semiconducting and Insulating Materials Conference. SIMC-XI (Cat. No.00CH37046) ◽

10.1109/sim.2000.939214 ◽

2002 ◽

Author(s):

C. Carmody ◽

H. Boudinov ◽

H.H. Tan ◽

C. Jagadish ◽

M.J. Lederer ◽

...

Keyword(s):

Optical Properties ◽

Indium Phosphide ◽

Electrical And Optical Properties ◽

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Diffusion of zinc into ion implanted iron doped indium phosphide

Solid-State Electronics ◽

10.1016/0038-1101(83)90041-2 ◽

1983 ◽

Vol 26 (8) ◽

pp. 771-775 ◽

Author(s):

P.N. Favennec ◽

L. Henry ◽

M. Salvi ◽

A.M. Hubert ◽

G. Morillot

Keyword(s):

Indium Phosphide ◽

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noise in ion-implanted indium phosphide layers

Microelectronics Reliability ◽

10.1016/0026-2714(89)90313-2 ◽

1989 ◽

Vol 29 (5) ◽

pp. 899

Keyword(s):

Indium Phosphide ◽

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An optimal annealing technique for ohmic contacts to ion-implanted n-layers in semi-insulating indium phosphide

Solid-State Electronics ◽

10.1016/0038-1101(87)90180-8 ◽

1987 ◽

Vol 30 (3) ◽

pp. 253-258 ◽

Author(s):

K.P. Pande ◽

E. Martin ◽

D. Gutierrez ◽

O. Aina

Keyword(s):

Indium Phosphide ◽

Ohmic Contacts ◽

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