Magnetic and structural properties of Fe films deposited by ion-beam sputtering with a high-energy assisted process

1996 ◽  
Vol 281-282 ◽  
pp. 484-487 ◽  
Author(s):  
S. Iwatsubo ◽  
T. Takahashi ◽  
M. Naoe
2021 ◽  
Vol 527 ◽  
pp. 167786
Author(s):  
V.G. Kostishin ◽  
A.Yu. Mironovich ◽  
R.I. Shakirzyanov ◽  
I.M. Isaev ◽  
A.V. Timofeev ◽  
...  

2013 ◽  
Author(s):  
Hideshi Muto ◽  
Yukimitsu Ohshiro ◽  
Katsunori Kawasaki ◽  
Michihiro Oyaizu ◽  
Toshiyuki Hattori

Optik ◽  
2019 ◽  
Vol 181 ◽  
pp. 695-702
Author(s):  
Shida Li ◽  
Huasong Liu ◽  
Yugang Jiang ◽  
Jiahuan He ◽  
Lishuan Wang ◽  
...  

1986 ◽  
Vol 70 ◽  
Author(s):  
H. Windischmann ◽  
R. W. Collins ◽  
J. M. Cavese

ABSTRACTFilms of a-Si:H were deposited by dual ion beam sputtering using a new configuration in which both the argon and hydrogen beam sources are directed at the silicon target. This geometry also permits independent control of the hydrogen and argon energy and particle flux. Infrared absorption mealurents show that even for high hydrogen concentrations, the 2000 cm-1 Si-H stretching band is dominant. This result is in contrast with the more conventional configuration in which the H soyrce is directed at the substrate, resulting in films with dominant 2100 cm-1 mode. This suggests that the precursors resulting in H-incorporation are different for the two configurations. In fact, IR reflectance and SIMS analysis of the silicon sputtering target reveal hydrogen is incorporated, peaking at about 30 Å below the target surface. A strong increase in the photo and dark dc conductivity occurs as the hydrogen ion enery is reduced below 30 eV, suggesting the importance of preventing high energy back-scattered H ion bombardment of thS film. At a H ion energy of 8eV, the values are 2x10-5 (AM1) and 2x10-9 (ohm-cm-1), respectively. Spectroscopic ellipsometry measurements of films reveal a Si-Si bond packing greater than that of low Hcontent a-Si prepared by LPCVD even up to H contents as high as 24%. Above 25% a microstructural transition is observed, verified by SEM, resulting in an increase in the density of voids, (which appears to be responsible for a sudden drop in the hydrogen-induced compressive stress) and accompanied by a shift in the dominant stretching mode energy.


2020 ◽  
Vol 20 (3) ◽  
pp. 280-288
Author(s):  
S. P. Glushko

Introduction. Obtaining high-quality thin metal films is important for advances in the technologies of applying antifriction and wear-resistant coatings on cutting tools or parts of friction couples. Various techniques of physical film deposition are applied using technologies of cathode (ion), magnetron and ion beam assisted sputtering. The work objective is to analyze, compare and determine the feasibility of techniques for the physical deposition of thin metal films when applying antifriction and wear-resistant coatings on cutting tools or parts of friction couples. Materials and Methods. Technologies of cathode (ionic), magnetron and ion-beam sputtering are considered. Schematic diagrams, conditions and parameters of the considered processes are presented. Results. An advanced technology for the deposition of thin films, alloying and hardening of the surfaces of metal parts is magnetron sputtering. Continuous wave (cw) magnetrons are used to apply coatings of complex composition or multilayer coatings on flat substrates. Ion beam sputtering is considered a slow sputtering of the target surface by bombardment with a high-energy ion beam and deposition on the substrate surface. Under the ion implantation, the surface of metals is doped with recoil atoms, which receive high energy from accelerated ions and move a few nanometers deeper. This enables to obtain ultra-thin doped layers. Low temperature of ion implantation, the possibility of sufficiently accurate control of the depth and the impurity distribution profile, create the prerequisites for the process automation. Wear tracks are more acidified under the same wear conditions on implanted steel compared to non-implanted steel. The nonequilibrium process under ion implantation causes the formation of such alloys in the surface layers that cannot be obtained under normal conditions due to diffusion of components or limited solubility. Ion implantation makes it possible to obtain alloys of a certain composition in the surface layer. Surface properties can be optimized without reference to the bulk properties of the material. Implantation is possible at low temperatures without a noticeable change in the size of the product.Discussion and Conclusion. Cathode (ion), magnetron and ion-beam sputtering have common advantages: due to the relatively low temperature, the substrate does not overheat; it is possible to obtain uniform coatings; the chemical composition of the deposited coatings is accurately reproduced. The rest of the advantages and disadvantages of the considered methods are individual. The results can be used to create thin films through alternating magnetron and then ionbeam deposition processes, which enables to obtain films uniformly modified in depth. This is important in the production of parts of friction couples and cutting tools to improve their quality.


1985 ◽  
Vol 58 ◽  
Author(s):  
N. Terada ◽  
M. Naoe

Magnetic thin films (Co-Ta, Co-Zr and pure iron films) have been deposited by means of dual ion beam sputtering and the effect of bombardment of high energy ions onto growing surface on their structure and properties has been investigated. The bombardment of argon ions with proper kinetic energy has the effects as follows;I. suppression of growth of crystallites, II. improvement of structural ordering in micro-scale and III. improvement of structural uniformity in macro-scale. Therefore, the films deposited with the proper bombardment are composed of fine crystallites with good atomic ordering. This causes an increase of 4лMs and reduction of Hc of the films;Co-Zr:4лMs=16 kG, Hc<0.6 Oe, Co-Ta:4лMs=15 kG,Hc<0.3 Oe and iron films:4лMs=21 kG,Hc=l Oe.


2000 ◽  
Vol 62 (17) ◽  
pp. 11709-11718 ◽  
Author(s):  
S. Colis ◽  
A. Dinia ◽  
C. Mény ◽  
P. Panissod ◽  
C. Ulhaq-Bouillet ◽  
...  

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