7219. Formation of cubic boron nitride films by arc-like plasma-enhanced ion plating method

Vacuum ◽  
1991 ◽  
Vol 42 (8-9) ◽  
pp. 572
Keyword(s):  
Boron Nitride ◽  
Cubic Boron Nitride ◽  
Ion Plating ◽  
Plating Method ◽  
Boron Nitride Films

Optical properties of cubic boron nitride films made by a reactive ion plating method

1993 ◽  
Vol 226 (1) ◽  
pp. 82-86 ◽  
Author(s):  
Masao Murakawa ◽  
Shuichi Watanabe ◽  
Shojiro Miyake
Keyword(s):  
Optical Properties ◽  
Boron Nitride ◽  
Cubic Boron Nitride ◽  
Ion Plating ◽  
Plating Method ◽  
Boron Nitride Films

X-RAY SPECTROSCOPIC ANALYSIS OF BORON-NITRIDE CLUSTERS DEPOSITED BY ION-PLATING METHOD

1996 ◽  
Vol 03 (01) ◽  
pp. 1051-1057 ◽  
Author(s):  
H. KOHZUKI ◽  
M. MOTOYAMA ◽  
T. KANEYOSHI ◽  
Y. KOWADA ◽  
J. KAWAI ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Emission Spectrum ◽  
Cubic Boron Nitride ◽  
Emission Spectra ◽  
Satellite Peak ◽  
X Ray ◽  
Ion Plating ◽  
Hartree Fock ◽  
Plating Method ◽  
Diffraction Patterns

Cubic boron-nitride (c-BN) films were deposited on a silicon substrate by varying the deposition time, using a reactive ion-plating method. In order to investigate the growth mechanism of c-BN films, these c-BN films were characterized by x-ray emission spectra of boron (B K x-ray emission spectra), infrared absorption spectra, selected area diffraction patterns, and TEM microstructures. It was found that the BN film with sp2 bonding formed initially on the substrate and subsequently c-BN film formed. The c-BN film was composed of fine crystallites with a size of about 10 nm and with random orientation. In the case of the B K x-ray emission spectrum from the BN film with sp 2 bonding, the intensity of the satellite peak at the short-wavelength side was extremely stronger than that of sp 2-bonded BN-like turbostratic or hexagonal BN. As a result of calculation of the B K x-ray emission spectrum of BN using the discrete variational Hartree-Fock-Slater (DV-Xα) method, it was found that the satellite peak intensity increased with formation of the fine BN cluster having two-coordinated boron (which has a dangling bond) and with decreasing size of the cluster. Therefore, it is considered that the BN film with sp 2 bonding was composed of the very fine BN cluster having two-coordinated borons, and became the precursor of c-BN film at the interface between the substrate and c-BN film.

Investigation of Preparing Cubic Boron Nitride Films by Magnetron Arc-Discharge Plasma Ion Plating

1998 ◽  
Vol 15 (3) ◽  
pp. 230-231 ◽  
Author(s):  
Yong-nian Zhao ◽  
Zhi He ◽  
Bo Wang ◽  
Yan-chun Tao ◽  
Guang-tian Zou
Keyword(s):  
Boron Nitride ◽  
Discharge Plasma ◽  
Arc Discharge ◽  
Cubic Boron Nitride ◽  
Ion Plating ◽  
Boron Nitride Films

scholarly journals Nucleation and Growth of Cubic Boron Nitride Films Produced by Ion-Assisted Pulsed Laser Deposition

1993 ◽  
Vol 316 ◽  
Author(s):  
T. A. Friedmann ◽  
D. L. Medlin ◽  
P. B. Mirkarimi ◽  
K. F. McCarty ◽  
E. J. Klaus ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Growth Parameters ◽  
Cubic Boron Nitride ◽  
Ion Source ◽  
Growth Time ◽  
Grain Sizes ◽  
Selected Area Electron Diffraction ◽  
Transmission Electron ◽  
Parametric Studies ◽  
Boron Nitride Films

ABSTRACTWe are studying the boron nitride system by using a pulsed excimer laser to ablate from hexagonal BN (hBN) targets to form cubic BN (cBN) films. We are depositing BN films on heated (25 - 800°C) Si (100) surfaces and are using a broad-beam ion source operated with Ar and N2 source gasses to produce BN films with a high percentage of sp3-bonded cBN. In order to understand and optimize the growth and nucleation of cBN films, parametric studies of the growth parameters have been performed. The best films to date show >85% sp3-bonded BN as determined from Fourier-transform infrared (FTIR) reflection spectroscopy. High resolution transmission electron microscopy (TEM) and selected area electron diffraction confirm the presence of cBN in these samples. The films are polycrystalline and show grain sizes up to 30- 40 nm. We find from both the FTIR and TEM analyses that the cBN content in these films evolves with growth time. Initially, the films are deposited as hBN and the cBN nucleates on this hBN underlayer. Importantly, the position of the cBN IR phonon also changes with growth time. Initially this mode appears near 1130 cm-1 and the position decreases with growth time to a constant value of 1085 cm-1. Since in bulk cBN this IR mode appears at 1065 cm-1, a large compressive stress induced by the ion bombardment is suggested. In addition, we report on the variation in cBN percentage with temperature.

scholarly journals Preparation of cubic boron nitride films by radio frequency sputtering

2006 ◽  
Vol 55 (10) ◽  
pp. 5441
Author(s):  
Tian Ling ◽  
Ding Yi ◽  
Chen Hao ◽  
Liu Jun-Kai ◽  
Deng Jin-Xiang ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Radio Frequency ◽  
Cubic Boron Nitride ◽  
Radio Frequency Sputtering ◽  
Boron Nitride Films

Growth process of cubic boron nitride films in bias sputter deposition

1997 ◽  
Vol 295 (1-2) ◽  
pp. 137-141 ◽  
Author(s):  
Yukiko Yamada ◽  
Yoshinao Tatebayashi ◽  
Osamu Tsuda ◽  
Toyonobu Yoshida
Keyword(s):  
Boron Nitride ◽  
Growth Process ◽  
Cubic Boron Nitride ◽  
Sputter Deposition ◽  
Boron Nitride Films
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