Characterization of cubic boron nitride films grown by mass separated ion beam deposition

1995 ◽  
Vol 106 (1-4) ◽  
pp. 153-158 ◽  
Author(s):  
H. Hofsäss ◽  
C. Ronning ◽  
U. Griesmeier ◽  
M. Gross ◽  
S. Reinke ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Ion Beam ◽  
Cubic Boron Nitride ◽  
Ion Beam Deposition ◽  
Boron Nitride Films ◽  
Beam Deposition

Characterization of cubic boron nitride films grown by mass separated ion beam deposition

1996 ◽  
pp. 153-158
Author(s):  
H. Hofsäss ◽  
C. Ronning ◽  
U. Griesmeier ◽  
M. Gross ◽  
S. Reinke ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Ion Beam ◽  
Cubic Boron Nitride ◽  
Ion Beam Deposition ◽  
Boron Nitride Films ◽  
Beam Deposition

Cubic boron nitride films grown by low energy B+ and N+ ion beam deposition

1995 ◽  
Vol 67 (1) ◽  
pp. 46-48 ◽  
Author(s):  
H. Hofsäss ◽  
C. Ronning ◽  
U. Griesmeier ◽  
M. Gross ◽  
S. Reinke ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Ion Beam ◽  
Cubic Boron Nitride ◽  
Low Energy ◽  
Ion Beam Deposition ◽  
Boron Nitride Films ◽  
Beam Deposition

Synthesis of Boron Nitride Film by Ion Beam Deposition

1991 ◽  
Vol 223 ◽  
Author(s):  
Z. Xia ◽  
G. L. Zhang ◽  
W. L. Lin
Keyword(s):  
Boron Nitride ◽  
Photoelectron Spectroscopy ◽  
Ion Beam ◽  
Cubic Boron Nitride ◽  
Nitride Film ◽  
Ion Beam Deposition ◽  
Nitrogen Ions ◽  
Argon Ions ◽  
Beam Deposition ◽  
Good Agreement

ABSTRACTThin films of cubic boron nitride (c-BN) together with hexagonal one (h-BN) have been prepared by using the ion beam deposition method (IBD). Boron was deposited onto silicon wafers by a sputtering beam of 600 eV argon ions, and the growing films were simultaneously irradiated by nitrogen ions at 200 eV. The films were subsequently characterized by infrared absorption (IR) spectroscopy, X-ray photoelectron spectroscopy (XPS) and microhardness measurements. The IR spectra show the evidence of BN layer formation by the absorption peaks at about 1350, 1120 and 810 cm−1, which are in good agreement with those of bulk BN.

Stress relaxation and optical characterization of TiO2 and SiO2 films grown by dual ion beam deposition

2008 ◽  
Vol 516 (23) ◽  
pp. 8604-8608 ◽  
Author(s):  
C. Bundesmann ◽  
I.-M. Eichentopf ◽  
S. Mändl ◽  
H. Neumann
Keyword(s):  
Stress Relaxation ◽  
Ion Beam ◽  
Optical Characterization ◽  
Sio2 Films ◽  
Ion Beam Deposition ◽  
Beam Deposition

scholarly journals Growth and Characterization of NbTiN Films Synthesized by Reactive Bias Target Ion Beam Deposition (RBTIBD)

2019 ◽  
Vol 29 (5) ◽  
pp. 1-5 ◽  
Author(s):  
Michael E. Cyberey ◽  
Tannaz Farrahi ◽  
Michael Eller ◽  
Jiwei Lu ◽  
Robert M. Weikle ◽  
...  
Keyword(s):  
Ion Beam ◽  
Ion Beam Deposition ◽  
Beam Deposition

Fabrication of Epitaxial Silicides thin films by Combining Low-Energy Ion Beam Deposition and Silicon Molecular Beam Epitaxy

1995 ◽  
Vol 402 ◽  
Author(s):  
H. Shibatal ◽  
Y. Makital ◽  
H. Katsumata ◽  
S. Kimura ◽  
N. Kobayashil ◽  
...  
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Ion Beam ◽  
Low Energy ◽  
Knudsen Cell ◽  
Ion Beam Deposition ◽  
Deposited Films ◽  
Beam Deposition

AbstractWe have developed successfully the combined ion beam and molecular beam epitaxy (CIBMBE) system with a newly designed Knudsen cell for Si effusion. The CIBMBE system was applied to the epitaxial growth of Sil., Cx alloy thin films on Si using low-energy ( 100 – 300 eV ) C+ ion beam. Preliminary results on the characterization of the deposited films suggest high potential and reliability of the new Knudsen cell for Si effusion, as well as high ability of the CIBMBE method to produce thermally non-equilibrium materials. In addition, they indicate that the value of x decreases with increasing IC, which suggests that the selective sputtering for deposited C atoms by incident C+ ion beams takes place during CIBMBE processing. Precipitates of β-SiC were also found to be formed in the deposited films, whose amount was observed to increase with increasing IC.

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