Characterization of immobilized urease membrane on silicon nitride layer

1988 ◽  
Vol 43 (3) ◽  
pp. 293-301 ◽  
Author(s):  
Eiichi Tamiya ◽  
Masao Gotoh ◽  
Tomoko Matsui ◽  
Masayuki Tanaka ◽  
Isao Karube
Keyword(s):  
Silicon Nitride ◽  
Nitride Layer ◽  
Silicon Nitride Layer

scholarly journals Characterization of stress transmission from silicon nitride layer to transistor channel

2011 ◽  
Vol 326 ◽  
pp. 012058
Author(s):  
R Thomas ◽  
D Benoit ◽  
L Clement ◽  
P Morin ◽  
D Cooper ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Nitride Layer ◽  
Transistor Channel ◽  
Silicon Nitride Layer ◽  
Stress Transmission

Studies on a Novel Qualification Method of Silicon Nitride Layer

2016 ◽  
Author(s):  
Younan Hua ◽  
Bingsheng Khoo ◽  
Henry Leong ◽  
Yixin Chen ◽  
Eason Chan ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Silicon Substrate ◽  
Nitride Layer ◽  
Passivation Layer ◽  
Wafer Fabrication ◽  
Wafer Surface ◽  
Si3n4 Layer ◽  
Silicon Nitride Layer ◽  
Passivation Layers ◽  
Pinhole Test

Abstract In wafer fabrication, a silicon nitride (Si3N4) layer is widely used as passivation layer. To qualify the passivation layers, traditionally chemical recipe PAE (H3PO4+ HNO3) is used to conduct passivation pinhole test. However, it is very challenging for us to identify any pinholes in the Si3N4 layer with different layers underneath. For example, in this study, the wafer surface is Si3N4 layer and the underneath layer is silicon substrate. The traditional receipt of PAE cannot be used for passivation qualification. In this paper, we will report a new recipe using KOH solution to identify the pinhole in the Si3N4 passivation layer.

Lateral growth of Ge nanocrystals in a thin Ge-rich silicon nitride layer

2013 ◽  
Vol 383 ◽  
pp. 36-42 ◽  
Author(s):  
Sammy Lee ◽  
Shujuan Huang ◽  
Gavin Conibeer ◽  
Martin Green
Keyword(s):  
Silicon Nitride ◽  
Nitride Layer ◽  
Lateral Growth ◽  
Silicon Nitride Layer ◽  
Ge Nanocrystals

Swift Heavy Ion Beam-induced Recrystallisation of Buried Silicon Nitride Layer

2009 ◽  
Vol 59 (4) ◽  
pp. 351-355 ◽  
Author(s):  
T. Som ◽  
O. Sinha ◽  
J. Ghatak ◽  
B. Satpati ◽  
D. Kanjilal
Keyword(s):  
Silicon Nitride ◽  
Ion Beam ◽  
Heavy Ion ◽  
Nitride Layer ◽  
Swift Heavy Ion ◽  
Silicon Nitride Layer ◽  
Heavy Ion Beam

Complete prevention of reaction at HfO2/Si interfaces by 1nm silicon nitride layer

2008 ◽  
Vol 602 (11) ◽  
pp. 1948-1953 ◽  
Author(s):  
Hikaru Kobayashi ◽  
Kentaro Imamura ◽  
Ken-ichi Fukayama ◽  
Sung-Soon Im ◽  
Osamu Maida ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Nitride Layer ◽  
Silicon Nitride Layer
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