Neutron quasielastic scattering from dynamic disorder in PbF2 and BaF2

1980 ◽  
Vol 80 (4) ◽  
pp. 337-341 ◽  
Author(s):  
M.H. Dickens ◽  
W. Hayes ◽  
C. Smith ◽  
M.T. Hutchings ◽  
R.E. Lechner
1997 ◽  
Vol 28 (4) ◽  
pp. 418 ◽  
Author(s):  
O. M. Knyaz’kov

1999 ◽  
Author(s):  
J. A. Caballero ◽  
E. Moya de Guerra ◽  
J. M. Udı́as ◽  
J. E. Amaro ◽  
T. W. Donnelly

1996 ◽  
Vol 64 (6) ◽  
pp. 758-765 ◽  
Author(s):  
W. M. Klipstein ◽  
J. S. Radnich ◽  
S. K. Lamoreaux

2000 ◽  
Vol 86 (1-3) ◽  
pp. 285-292
Author(s):  
P. Reineker ◽  
Ch. Warns ◽  
Th. Neidlinger ◽  
I. Barvi´k

2017 ◽  
Vol 163 ◽  
pp. 00039
Author(s):  
A. Mukherjee ◽  
Piyasi Biswas ◽  
Md. Moin Shaikh ◽  
Subinit Roy ◽  
A. Goswami ◽  
...  

1983 ◽  
Vol 28 (5) ◽  
pp. 569-572 ◽  
Author(s):  
J M Janik ◽  
E Mikuli ◽  
A Migdal-Mikuli ◽  
M Rachwalska ◽  
T Stanek ◽  
...  

2000 ◽  
Vol 33 (1) ◽  
pp. 147-155 ◽  
Author(s):  
A. D. Stoica ◽  
M. Popovici ◽  
W. B. Yelon ◽  
R. Berliner

The use of bent perfect crystals in focusing three-axis neutron spectrometry with position-sensitive detection (PSD) is analyzed on the basis of a phase-space theory. With PSD, the usual sequential scans are replaced by simultaneous scans. The case of high resolution in energy transfer is considered in detail. With commercial thin silicon wafers, the achievable resolutions are in the 10–150 µeV range, depending on neutron energy. Resolutions around 10 µeV are obtained on the peak of cold-source spectra. To take advantage of the possibilities offered by silicon wafers, PSD with spatial resolution well below 1 mm will be needed. With PSD analysis, a new kind of focusing exists that allows the thickness of bent perfect analyzer crystals to be increased, providing an intensity gain at no resolution loss. With multilamella assemblies a gain in count rate by the number of lamellae in the packet is achievable. Results of a demonstration experiment are presented, confirming that under the right conditions, a multilamella analyzer may resemble a single bent wafer, the individual curves of many wafers having been combined to provide the intensity gain.


2005 ◽  
Vol 109 (45) ◽  
pp. 21241-21257 ◽  
Author(s):  
Marcel Ovidiu Vlad ◽  
Gianfranco Cerofolini ◽  
Peter Oefner ◽  
John Ross

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