Kinetics of island formation at the interfaces of AlGaAs/GaAs/AlGaAs quantum wells upon growth interruption

1987 ◽  
Vol 3 (1) ◽  
pp. 79-82 ◽  
Author(s):  
D. Bimberg ◽  
D. Mars ◽  
J.N. Miller ◽  
R. Bauer ◽  
D. Oertel ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Island Formation ◽  
Growth Interruption ◽  
Kinetics Of

Dynamics of island formation in the growth of InAs/InP quantum wells

1994 ◽  
Vol 136 (1-4) ◽  
pp. 278-281 ◽  
Author(s):  
A. Rudra ◽  
R. Houdré ◽  
J.F. Carlin ◽  
M. Ilegems
Keyword(s):  
Quantum Wells ◽  
Island Formation

Kinetics of accumulation of excess holes under photoexcitation and their relaxation in GaAs/AlGaAs shallow quantum wells

JETP Letters ◽  
2015 ◽  
Vol 101 (3) ◽  
pp. 183-188 ◽  
Author(s):  
M. V. Kochiev ◽  
V. A. Tsvetkov ◽  
N. N. Sibeldin
Keyword(s):  
Quantum Wells ◽  
Kinetics Of

Influence of Growth Conditions on the Modulation Mechanism of Photoreflectance Spectra of Single InGaAs/InAlAs Quantum Wells

1993 ◽  
Vol 324 ◽  
Author(s):  
Y. Baltagi ◽  
C. Bru ◽  
T. Benyatrou ◽  
M.A. Garcia-Perez ◽  
G. Guillot ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Room Temperature ◽  
Growth Conditions ◽  
Surface Barrier ◽  
Single Quantum ◽  
Interface Defects ◽  
Growth Interruption ◽  
Different Temperatures ◽  
Inp Substrates ◽  
Pump Laser Beam

AbstractUsing Photoreflectance (PR) measurements, we have investigated In0.53Ga0.47As single quantum wells (SQW) with In0.52Al0.48As barriers grown by MBE on InP substrates. Unusual lineshapes of PR spectra are observed for the fundamental transition in some of the SQW. This phenomenon is shown to be independent on the widths of both the SQW (5nm or 10nm) and the surface barrier layer (between 65nm and 300nm). PR spectra are recorded at different temperatures and in different samples, as well as with a secondary pump laser beam. From these measurements, it is concluded that interface defects exist in the SQW grown at 525°C without growth interruption. Such defects are clearly evidenced in room temperature PR experiments and confirmed by PL measurements.

Precise control of island formation using overgrowth technique on cleaved edges of strained multiple quantum wells

1997 ◽  
Vol 70 (22) ◽  
pp. 2981-2983 ◽  
Author(s):  
J. Arai ◽  
N. Usami ◽  
K. Ota ◽  
Y. Shiraki ◽  
A. Ohga ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Island Formation ◽  
Precise Control

Specific features of the spectra and relaxation kinetics of long-wavelength photoconductivity in narrow-gap HgCdTe epitaxial films and heterostructures with quantum wells

2013 ◽  
Vol 47 (11) ◽  
pp. 1438-1441 ◽  
Author(s):  
V. V. Rumyantsev ◽  
A. V. Ikonnikov ◽  
A. V. Antonov ◽  
S. V. Morozov ◽  
M. S. Zholudev ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Epitaxial Films ◽  
Narrow Gap ◽  
Relaxation Kinetics ◽  
Long Wavelength ◽  
Kinetics Of
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