In situ growth of YBaCuO films by ion beam sputtering

The growth of Ag films deposited on various substrate materials such as MoS2, mica, graphite, and MgO has been investigated extensively using the in situ electron microscopy technique. The three stages of film growth, namely, the nucleation, growth of islands followed by liquid-like coalescence have been observed in both the vacuum vapor deposited and ion beam sputtered thin films. The mechanisms of nucleation and growth of silver films formed by ion beam sputtering on the (111) plane of silicon comprise the subject of this paper. A novel mode of epitaxial growth is observed to that seen previously.The experimental arrangement for the present study is the same as previous experiments, and the preparation procedure for obtaining thin silicon substrate is presented in a separate paper.

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In-situ epitaxial growth study of Bi/sub 2/(Sr,Ca)/sub 3/Cu/sub 2/O/sub x/ films by ion beam sputtering on cleaved MgO substrates

IEEE Transactions on Magnetics ◽

10.1109/20.133402 ◽

1991 ◽

Vol 27 (2) ◽

pp. 1205-1210 ◽

Cited By ~ 14

Author(s):

J. Fujita ◽

T. Yoshitake ◽

T. Satoh ◽

T. Ichihashi ◽

H. Igarashi

Keyword(s):

Epitaxial Growth ◽

Ion Beam ◽

Ion Beam Sputtering ◽

Growth Study ◽

Beam Sputtering

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Direct comparative study on the energy level alignments in unoccupied/occupied states of organic semiconductor/electrode interface by constructing in-situ photoemission spectroscopy and Ar gas cluster ion beam sputtering integrated analysis system

Journal of Applied Physics ◽

10.1063/1.4897517 ◽

2014 ◽

Vol 116 (15) ◽

pp. 153702 ◽

Cited By ~ 10

Author(s):

Dong-Jin Yun ◽

JaeGwan Chung ◽

Yongsu Kim ◽

Sung-Hoon Park ◽

Seong-Heon Kim ◽

...

Keyword(s):

Ion Beam ◽

Integrated Analysis ◽

Ion Beam Sputtering ◽

Beam Sputtering ◽

Cluster Ion ◽

Electrode Interface ◽

Analysis System ◽

Gas Cluster Ion Beam ◽

Ar Gas

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Study of Natural Oxidation of Ultra-Thin Aluminum Layers with In-Situ Resistance Measurement

MRS Proceedings ◽

10.1557/proc-569-185 ◽

1999 ◽

Vol 569 ◽

Cited By ~ 6

Author(s):

C. Fery ◽

W.E. Bailey ◽

K. Yamada ◽

S.X. Wang

Keyword(s):

Ion Beam ◽

Low Noise ◽

Resistance Measurement ◽

Ion Beam Sputtering ◽

Oxidation Rates ◽

Beam Sputtering ◽

Noise Data ◽

Set Up ◽

Lock In

ABSTRACTExposure to oxygen (1 Torr) at room temperature of thin Al films deposited by UHV ion beam sputtering has been studied using an in-situ resistance measurement set-up. Two lock-in amplifiers allow low noise data acquisition. By monitoring the conductance during deposition and oxidation we can deduce the consumed Al thickness as a function of exposure time (t). It is found that the Al/vacuum interface is diffuse for electron scattering. A two-stage mechanism for natural oxidation is revealed: fast growth (for t<10s) followed by a slow logarithmic growth. A simple model based on interface reactions and place exchange describes the experimental results. The conductance drop after 5 minutes of oxidation is found to decrease for initial Al thicknesses below 30A. This suggests the oxidation rates slow down for thin initial Al thicknesses.

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In situ preparation of Y/sub 1/Ba/sub 2/Cu/sub 3/O/sub 7-x/ thin films deposited by ion beam sputtering: preliminary results

IEEE Transactions on Magnetics ◽

10.1109/20.133989 ◽

1991 ◽

Vol 27 (2) ◽

pp. 2522-2524 ◽

Cited By ~ 3

Author(s):

S. Barbanera ◽

F. Murtas ◽

L. Scopa ◽

V. Boffa ◽

G. Paterno ◽

...

Keyword(s):

Thin Films ◽

Ion Beam ◽

Ion Beam Sputtering ◽

Preliminary Results ◽

In Situ Preparation ◽

Beam Sputtering

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Semi-quantitative in situ Auger analysis of silicon nitride layers deposited by reactive ion beam sputtering

Surface Science ◽

10.1016/0039-6028(85)90968-9 ◽

1985 ◽

Vol 162 (1-3) ◽

pp. 695-701 ◽

Cited By ~ 11

Author(s):

A. Bosseboeuf ◽

D. Bouchier

Keyword(s):

Silicon Nitride ◽

Ion Beam ◽

Ion Beam Sputtering ◽

Auger Analysis ◽

Beam Sputtering ◽

Nitride Layers

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Deposition of Conductive Titanium Sub-Oxide Films by Reactive Ion-Beam Sputtering

MRS Proceedings ◽

10.1557/proc-337-441 ◽

1994 ◽

Vol 337 ◽

Cited By ~ 1

Author(s):

K.G. Grigorov ◽

A.H. Benhocine ◽

D. Bouchier ◽

F. Meyer

Keyword(s):

Ion Beam ◽

High Vacuum ◽

Lattice Parameter ◽

Ultra High Vacuum ◽

Titanium Monoxide ◽

Ion Beam Sputtering ◽

Beam Sputtering ◽

Cubic Structure ◽

Electron Spectrometry

ABSTRACTTitanium monoxide films were deposited on silicon by reactive ion beam sputtering from a Ti target. The film composition was measured in situ by Auger electron spectrometry. It was observed that oxygen content in the deposit does not depend on the substrate temperature, up to 600 °C. Synthesized TiO films had a cubic structure with a lattice parameter of 4.17 Å, which confirmed that the O/Ti concentration ratio in the films was very close to the expected value. The films were found to be conductive, with a resistivity value equal to 170 μΩ cm. They had a yellowish metallic appearence and a very smooth surface. Sequences of annealings at increasing temperatures were performed under ultra-high-vacuum. No AES signal from silicon was observed up to a temperature of 700 °C.

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In Situ Deformation Studies of Fe/Al and Fe/Si Multi-Layered Films Prepared by Ion Beam Sputtering

MRS Proceedings ◽

10.1557/proc-239-487 ◽

1991 ◽

Vol 239 ◽

Author(s):

K. Kubota ◽

M. Naoe

Keyword(s):

Magnetic Properties ◽

Internal Stress ◽

Ion Beam ◽

Soft Magnetic Properties ◽

Ion Beam Sputtering ◽

Soft Magnetic ◽

Beam Sputtering ◽

In Situ Deformation ◽

Deformation Measurements

ABSTRACTIn situ deformation measurements of Fe/Al and Fe/Si multi-layered films on thin substrates were made by detecting the curvature of substrates during deposition. The deformation inside of Fe layers corresponding to the compressive and tensile stresses was detected for the Fe/Al and Fe/Si multi-layered films, respectively. For the Fe/Si multi-layered films, the internal stress in Fe layers became from tensile to compressive during deposition under bombardment of Ar Jons. These stresses in Fe layer were closely related to the soft magnetic properties of these multi-layered films. In situ deformation studies may be useful to make sure the effect of internal stress on the magnetic properties of these multi-layered films.

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