Effects of ion implantation energy of Er on defects and Er-gettering in silicon

1996 ◽  
pp. 955-959
Author(s):  
A. Majima ◽  
S. Uekusa ◽  
K. Shimazu ◽  
H. Takano
Keyword(s):  
Ion Implantation ◽  
Implantation Energy

Degradation in a Molybdenum-Gate MOS Structure Caused by N+ Ion Implantation for Work Function Control

2002 ◽  
Vol 716 ◽  
Author(s):  
Takaaki Amada ◽  
Nobuhide Maeda ◽  
Kentaro Shibahara
Keyword(s):  
Ion Implantation ◽  
Work Function ◽  
Nitrogen Concentration ◽  
Implantation Dose ◽  
Control Technique ◽  
High Dose ◽  
Implantation Energy ◽  
20 Nm ◽  
Large Work ◽  
Gate Work Function

AbstractAn Mo gate work function control technique which uses annealing or N+ ion implantation has been reported by Ranade et al. We have fabricated Mo-gate MOS diodes, based on their report, with 5-20 nm SiO2 and found that the gate leakage current was increased as the N+ implantation dose and implantation energy were increased. Although a work function shift was observed in the C-V characteristics, a hump caused by high-density interface states was found for high-dose specimens. Nevertheless, a work function shift larger than -1V was achieved. However, nitrogen concentration at the Si surface was about 1x1020 cm-3 for the specimen with a large work function shift.

Optical Activation of Ion Implanted Rare-Earths

1993 ◽  
Vol 301 ◽  
Author(s):  
P.N. Favennec ◽  
H. L'haridon ◽  
D. Moutonnet ◽  
M. Salvi ◽  
M. Gauneau
Keyword(s):  
Rare Earth ◽  
Ion Implantation ◽  
Rare Earth Elements ◽  
Rare Earths ◽  
Annealing Temperature ◽  
Implantation Energy ◽  
Optical Activation ◽  
Energy Dose ◽  
The Rare Earth ◽  
Ion Implanted

ABSTRACTA review of the main results concerning the ion implantation of the rare-earth elements is given.To obtain the best optical activation of rare-earths, we attempt to optimize the implantation (energy, dose) and annealing (temperature, duration) conditions. The studied materials are Si, II-VI binaries (ZnTe, CdS), III-V binaries (GaAs, InP), III-V ternaries (GaAlAs, GaInAs) and III-V quaternaries (GaInAsP).

Effects of Low Energy Carbon Ion Implantation on the Material Properties of InAs/GaAs Quantum Dots with Variation in Capping Layer

2015 ◽  
Vol 1743 ◽  
Author(s):  
S. Upadhyay ◽  
A Mandal ◽  
A. Basu ◽  
P. Singh ◽  
S. Chakrabarti
Keyword(s):  
Quantum Dots ◽  
Ion Implantation ◽  
Blue Shift ◽  
Low Energy ◽  
Stress Generation ◽  
Carbon Ions ◽  
Implantation Energy ◽  
Carbon Ion ◽  
Capping Layer ◽  
Pl Intensity

ABSTRACTUnder controlled irradiation of low energy carbon ions, photoluminescence (PL) study of InAs quantum dots prepared with different capping structures (GaAs and InAlGaAs) was carried out. Samples were investigated by varying implantation energy from 15 keV to 50 keV with fluence ranging between 3 × 1011ions/cm2 and 8 × 1011 ions/cm2. For fixed fluence of 4 × 1011ions/cm2, low temperature PL showed enhancement in a certain range of energy, along with a blue shift in the PL peak wavelength. In contrast, with varying fluence at fixed implantation energy of 50 keV, PL enhancement was not significant, rather a drop in PL intensity was noted at higher fluence from 5 × 1011 to 8 × 1011 ions/cm2. Moreover, carbon ion implantation caused a blue shift in the PL emission peak for both energy and fluence variations. PL intensity suppression was possibly caused by the formation of non-radiative recombination centers (NRCs) near the capping layer, while the corresponding blue shift might be attributed to stress generation in the capping layer due to implantation. As-grown and implanted InAlGaAs capped samples did not exhibit much variation in full width at half maxima of PL spectra; however, significant variation was observed for the GaAs capped sample. These results validate that InAlGaAs-capped QDs are more immune to ion implantation.

scholarly journals Effect of ion implantation energy for the synthesis of Ge nanocrystals in SiN films with HfO2/SiO2 stack tunnel dielectrics for memory application

2011 ◽  
Vol 6 (1) ◽  
Author(s):  
Bhabani Shankar Sahu ◽  
Florence Gloux ◽  
Abdelilah Slaoui ◽  
Marzia Carrada ◽  
Dominique Muller ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Implantation Energy ◽  
Ge Nanocrystals

Properties of Ion Implanted and UHV-CVD Grown Si:Er

1996 ◽  
Vol 422 ◽  
Author(s):  
M. Morse ◽  
B. Zheng ◽  
J. Palm ◽  
X. Duan ◽  
L. C. Kimerling
Keyword(s):  
Ion Implantation ◽  
High Vacuum ◽  
Chemical Vapor ◽  
Ultra High Vacuum ◽  
Implantation Energy ◽  
Lower Annealing Temperature ◽  
C 30 ◽  
Post Implantation ◽  
Donor Activity ◽  
Implanted Devices

AbstractWe have fabricated Si:Er films by ion implantation and ultra-high vacuum chemical vapor deposition (UHV-CVD). The energy of the ion implantation was varied from 200 keV to 4.5 MeV. Oxygen was co-implanted to overlap the erbium profile. At implant energies of 400 keV, we found that the luminescence was optimized at a lower annealing temperature (800° C, 30 minutes) than that needed for the 4.5 MeV implant (900°C, 30 minutes). The light intensity per erbium atom is critically dependent on the implantation energy. However, spreading resistance measurements show that the donor activity of the implanted erbium is independent of energy. We have correlated the donor activity with quantum efficiency by varying the donor spatial distribution and concentration through post implantation heat treatments.For the UHV-CVD grown Si:Er films, two erbium metallorganic precursors, Er(TMHD)3 and Er(FOD)3. have been used for growths from 550–620°C. The thickness of the erbium layers are similar to that of implanted devices but the Er concentration of 4 × 1021/cm3 exceeded the implanted material by two orders of magnitude.

scholarly journals Effect of Nitrogen Ion Implantation Energy on the Mechanical and Chemical Properties of AISI M50 Steel

2021 ◽  
Vol 2021 ◽  
pp. 1-8
Author(s):  
Xiangyu Xie ◽  
Chao Chen ◽  
Jun Luo ◽  
Jin Xu
Keyword(s):  
Ion Implantation ◽  
Chemical Properties ◽  
Metal Vapor ◽  
Vacuum Arc ◽  
Implantation Energy ◽  
Nitrogen Ion Implantation ◽  
Nitrogen Ions ◽  
Nitrogen Ion ◽  
And Chemical Properties ◽  
M50 Steel

Nitrogen ion implantation has shown its role in enhancing steel surface properties. In this work, AISI M50 steel was implanted with nitrogen ions by using the metal vapor vacuum arc technique with a dose of 2 × 1017 cm−2, and corresponding implanted energies were at 60 keV, 80 keV, and 100 keV, respectively. The distribution of implanted nitrogen ions was calculated, and the samples were tribologically tested and examined. As shown by the results, the microhardness in implanted samples was 1.17 times greater relative to that of the unimplanted sample. The implantation of the nitrogen ion leads to a change in the friction coefficient of the AISI M50 steel. Adhesive wear mechanism occurs in the unimplanted sample, and adhesion resistance tends to increase when nitrogen-implanted energy increases. The formation of oxides α-Fe2O3 and Fe3O4 further enhanced the tribological properties for implanted samples.

Formation of AlGaAs by ion beam mixing of Al films on GaAs

1990 ◽  
Vol 48 (4) ◽  
pp. 690-691
Author(s):  
R.S. Deol ◽  
E.A. Kamil ◽  
K.P. Homewood ◽  
T. Kobayashi
Keyword(s):  
Ion Implantation ◽  
Room Temperature ◽  
Ion Beam ◽  
Chamber Pressure ◽  
Pure Aluminium ◽  
Material Synthesis ◽  
Ion Beam Mixing ◽  
Implantation Energy ◽  
Gaas Substrates ◽  
Heated Filament

There is considerable interest in the use of ion implantation for material synthesis. The synthesis of AlGaAs by dual implants of As+ and Al+ into GaAs followed by rapid thermal annealing (RTA) has been reported recently. In this paper results relating to the formation of AlxGa1-xAs by depositing thin Al films on GaAs substrates and irradiating with arsenic ions followed by RTA are presented.Aluminium layers of 580Å or 650Å in thickness were deposited onto liquid encapsulated Czochralski (LEC) grown samples of semi-insulating <100> GaAs. The deposition was done using pure aluminium on a heated filament at a chamber pressure of ∽10−6 Torr with the thickness being measured using a talystep. Subsquently As+ implants were performed at room temperature using an energy of 150, 200 or 300 keV and a dose of 3x1016 or 1x1017 cm−2. The implantation energy was selected to ensure that the projected depth exceeded the thickness of the Al overlayer employed.

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