Comparative assessment of InGaAs sub-channel and InAs composite channel double gate (DG)-HEMT for sub-millimeter wave applications

AEU - International Journal of Electronics and Communications ◽

10.1016/j.aeue.2017.10.029 ◽

2018 ◽

Vol 83 ◽

pp. 462-469 ◽

Cited By ~ 8

Author(s):

Saravana Kumar Radhakrishnan ◽

Baskaran Subramaniyan ◽

Mohanbabu Anandan ◽

Mohankumar Nagarajan

Keyword(s):

Millimeter Wave ◽

Comparative Assessment ◽

Double Gate ◽

Composite Channel ◽

Inas Composite Channel

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Comparative assessment of III–V heterostructure and silicon underlap double gate MOSFETs

Semiconductors ◽

10.1134/s1063782612100119 ◽

2012 ◽

Vol 46 (10) ◽

pp. 1299-1303 ◽

Cited By ~ 8

Author(s):

Hemant Pardeshi ◽

Godwin Raj ◽

Sudhansu Kumar Pati ◽

N. Mohankumar ◽

Chandan Kumar Sarkar

Keyword(s):

Comparative Assessment ◽

Double Gate

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Interest of 0.15 μm gate length InGaAs/InP composite channel HEMTs for millimeter-wave MMIC amplifiers

IEEE MTT/ED/AP/LEO Societies Joint Chapter United Kingdom and Republic of Ireland Section. 1997 Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications. EDMO (Cat. No.97TH8305) ◽

10.1109/edmo.1997.668598 ◽

2002 ◽

Cited By ~ 1

Author(s):

P. Chevalier ◽

F. Dessenne ◽

M. Badirou ◽

J.L. Thobel ◽

R. Fauquembergue

Keyword(s):

Millimeter Wave ◽

Gate Length ◽

Composite Channel

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Lateral Scale Down of InGaAs/InAs Composite-Channel HEMTs With Tungsten-Based Tiered Ohmic Structure for 2-S/mm $g_{m}$ and 500-GHz $f_{T}$

IEEE Transactions on Electron Devices ◽

10.1109/ted.2006.890262 ◽

2007 ◽

Vol 54 (3) ◽

pp. 378-384 ◽

Cited By ~ 31

Author(s):

Hideaki Matsuzaki ◽

Takashi Maruyama ◽

Toshihiko Koasugi ◽

Hiroyuki Takahashi ◽

Masami Tokumitsu ◽

...

Keyword(s):

Composite Channel ◽

Scale Down ◽

Lateral Scale ◽

Inas Composite Channel

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Fabrication of InAs composite channel high electron mobility transistors by utilizing Ne-based atomic layer etching

Applied Physics Letters ◽

10.1063/1.2780113 ◽

2007 ◽

Vol 91 (10) ◽

pp. 102110 ◽

Cited By ~ 8

Author(s):

T.-W. Kim ◽

J.-I. Song ◽

J. H. Jang ◽

D.-H. Kim ◽

S. D. Park ◽

...

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

Atomic Layer ◽

High Electron ◽

High Electron Mobility ◽

Composite Channel ◽

Electron Mobility Transistors ◽

Atomic Layer Etching ◽

Inas Composite Channel

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$$\hbox {In}_{0.7}\hbox {Ga}_{0.3}\hbox {As}/\hbox {InAs}/\hbox {In}_{0.7}\hbox {Ga}_{0.3}\hbox {As}$$ In 0.7 Ga 0.3 As / InAs / In 0.7 Ga 0.3 As composite-channel double-gate (DG)-HEMT devices for high-frequency applications

Journal of Computational Electronics ◽

10.1007/s10825-017-0991-x ◽

2017 ◽

Vol 16 (3) ◽

pp. 732-740 ◽

Cited By ~ 1

Author(s):

R. Saravana Kumar ◽

A. Mohanbabu ◽

N. Mohankumar ◽

D. Godwin Raj

Keyword(s):

High Frequency ◽

Double Gate ◽

Composite Channel

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Comparative Assessment of LTCC Band-pass Filters for Millimeter-Wave Applications

2006 European Microwave Conference ◽

10.1109/eumc.2006.281432 ◽

2006 ◽

Author(s):

Vasily Kondratyev ◽

Markku Lahti ◽

Kari Kautio

Keyword(s):

Millimeter Wave ◽

Comparative Assessment ◽

Band Pass

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Impact of Gatelength on the Performance of InGaAs/InAs/InGaAs Composite Channel Dual Material Double Gate-High Electron Mobility Transistor Devices for High-Frequency Applications

Journal of Nanoelectronics and Optoelectronics ◽

10.1166/jno.2017.2139 ◽

2017 ◽

Vol 12 (12) ◽

pp. 1314-1320

Author(s):

S. Nagarajan ◽

Reeba Korah ◽

G. Maria Kalavathy

Keyword(s):

Electron Mobility ◽

High Frequency ◽

High Electron Mobility Transistor ◽

High Electron ◽

Double Gate ◽

High Electron Mobility ◽

Composite Channel ◽

Dual Material

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Metal-organic vapor-phase epitaxy growth of InP-based HEMT structures with InGaAs/InAs composite channel

2012 International Conference on Indium Phosphide and Related Materials ◽

10.1109/iciprm.2012.6403369 ◽

2012 ◽

Cited By ~ 2

Author(s):

Hiroki Sugiyama ◽

Takuya Hoshi ◽

Haruki Yokoyama ◽

Hideaki Matsuzaki

Keyword(s):

Vapor Phase ◽

Vapor Phase Epitaxy ◽

Composite Channel ◽

Organic Vapor ◽

Metal Organic ◽

Inas Composite Channel

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In₀.₅₃Ga₀.₄₇As/InAs Composite Channel MOS-HEMT Exhibiting 511 GHz fτ and 256 GHz f max

IEEE Journal of the Electron Devices Society ◽

10.1109/jeds.2020.3017141 ◽

2020 ◽

Vol 8 ◽

pp. 930-934

Author(s):

Brian Markman ◽

Simone Tommaso Suran Brunelli ◽

Aranya Goswami ◽

Matthew Guidry ◽

Mark J. W. Rodwell

Keyword(s):

Composite Channel ◽

Inas Composite Channel

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Enhanced InGaAs/InAs/InGaAs Composite Channel MOSHEMT Device Performance by Using Double Gate Recessed Structure with HfO2 as Dielectric Materials

Micro-Electronics and Telecommunication Engineering - Lecture Notes in Networks and Systems ◽

10.1007/978-981-33-4687-1_49 ◽

2021 ◽

pp. 511-525

Author(s):

R. Saravana Kumar ◽

N. Mohankumar ◽

S. Baskaran ◽

R. Poornachandran

Keyword(s):

Dielectric Materials ◽

Device Performance ◽

Double Gate ◽

Composite Channel

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