Fabrication of InAs composite channel high electron mobility transistors by utilizing Ne-based atomic layer etching

Applied Physics Letters ◽

10.1063/1.2780113 ◽

2007 ◽

Vol 91 (10) ◽

pp. 102110 ◽

Author(s):

T.-W. Kim ◽

J.-I. Song ◽

J. H. Jang ◽

D.-H. Kim ◽

S. D. Park ◽

...

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

Atomic Layer ◽

High Electron ◽

High Electron Mobility ◽

Composite Channel ◽

Electron Mobility Transistors ◽

Atomic Layer Etching ◽

Inas Composite Channel

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Atomic layer deposition of ZrO2as gate dielectrics for AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors on silicon

Applied Physics Letters ◽

10.1063/1.4824445 ◽

2013 ◽

Vol 103 (14) ◽

pp. 142109 ◽

Author(s):

G. Ye ◽

H. Wang ◽

S. Arulkumaran ◽

G. I. Ng ◽

R. Hofstetter ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Electron Mobility ◽

Gate Dielectrics ◽

High Electron Mobility Transistors ◽

Atomic Layer ◽

High Electron ◽

Metal Insulator ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Layer Deposition

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Evaluation of AlGaN/GaN metal–oxide–semicondutor high-electron mobility transistors with plasma-enhanced atomic layer deposition HfO2/AlN date dielectric for RF power applications

Japanese Journal of Applied Physics ◽

10.7567/jjap.56.094101 ◽

2017 ◽

Vol 56 (9) ◽

pp. 094101

Author(s):

Yu Sheng Chiu ◽

Quang Ho Luc ◽

Yueh Chin Lin ◽

Jui Chien Huang ◽

Chang Fu Dee ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Metal Oxide ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

Atomic Layer ◽

High Electron ◽

Rf Power ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Layer Deposition

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Threshold voltage controlled by gate area and gate recess in inverted trapezoidal trigate AlGaN/GaN MOS high-electron-mobility transistors with photoenhanced chemical and plasma-enhanced atomic layer deposition oxides

Applied Physics Express ◽

10.7567/apex.8.084101 ◽

2015 ◽

Vol 8 (8) ◽

pp. 084101 ◽

Author(s):

Po-Chun Yeh ◽

Yun-Wei Lin ◽

Yue-Lin Huang ◽

Jui-Hung Hung ◽

Bo-Ren Lin ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Threshold Voltage ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

Atomic Layer ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Layer Deposition ◽

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Effects of process temperature during atomic layer deposition using water and ozone as oxidants on current–voltage characteristics of Al2O3/AlGaN/GaN high-electron-mobility transistors on Si substrates

Japanese Journal of Applied Physics ◽

10.7567/jjap.54.020301 ◽

2015 ◽

Vol 54 (2) ◽

pp. 020301 ◽

Author(s):

Toshiharu Kubo ◽

Joseph J. Freedsman ◽

Yusuke Yoshida ◽

Takashi Egawa

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

Atomic Layer ◽

High Electron ◽

High Electron Mobility ◽

Si Substrates ◽

Electron Mobility Transistors ◽

Layer Deposition ◽

Current Voltage ◽

Current Voltage Characteristics

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Characterization and Modeling of Microwave Noise in InP/InGaAs Composite Channel High Electron Mobility Transistors (HEMTs)

10.7567/ssdm.2005.i-7-2 ◽

2005 ◽

Author(s):

Yuwei Liu ◽

Hong Wang ◽

Rong Zeng

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Composite Channel ◽

Electron Mobility Transistors ◽

Microwave Noise

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High-performance high electron mobility transistors with GaN/InGaN composite channel and superlattice back barrier

Applied Physics Letters ◽

10.1063/1.5102080 ◽

2019 ◽

Vol 115 (7) ◽

pp. 072105 ◽

Author(s):

Yachao Zhang ◽

Rui Guo ◽

Shengrui Xu ◽

Jincheng Zhang ◽

Shenglei Zhao ◽

...

Keyword(s):

Electron Mobility ◽

High Performance ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Composite Channel ◽

Electron Mobility Transistors

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Atomic layer deposited Ta2O5 gate insulation for enhancing breakdown voltage of AlN/GaN high electron mobility transistors

Applied Physics Letters ◽

10.1063/1.3531551 ◽

2011 ◽

Vol 98 (2) ◽

pp. 023506 ◽

Author(s):

D. A. Deen ◽

D. F. Storm ◽

R. Bass ◽

D. J. Meyer ◽

D. S. Katzer ◽

...

Keyword(s):

Breakdown Voltage ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

Atomic Layer ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors

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Enhancement mode AlGaN/GaN MOS high-electron-mobility transistors with ZrO2gate dielectric deposited by atomic layer deposition

Applied Physics Express ◽

10.7567/apex.9.071003 ◽

2016 ◽

Vol 9 (7) ◽

pp. 071003 ◽

Author(s):

Travis J. Anderson ◽

Virginia D. Wheeler ◽

David I. Shahin ◽

Marko J. Tadjer ◽

Andrew D. Koehler ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

Atomic Layer ◽

High Electron ◽

High Electron Mobility ◽

Enhancement Mode ◽

Electron Mobility Transistors ◽

Layer Deposition

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Study of Ohmic contact resistance to Ga[sub (1−X)]In[sub (X)]As/InP composite channel InP high electron mobility transistors for X=35% to X=81%

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.589523 ◽

1997 ◽

Vol 15 (5) ◽

pp. 1773 ◽

Author(s):

J. B. Shealy

Keyword(s):

Contact Resistance ◽

Ohmic Contact ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Composite Channel ◽

Electron Mobility Transistors

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High-Performance InGaAs/InP Composite-Channel High Electron Mobility Transistors Grown by Metal–Organic Vapor-Phase Epitaxy

Japanese Journal of Applied Physics ◽

10.1143/jjap.47.2828 ◽

2008 ◽

Vol 47 (4) ◽

pp. 2828-2832 ◽

Author(s):

Hiroki Sugiyama ◽

Toshihiko Kosugi ◽

Haruki Yokoyama ◽

Koichi Murata ◽

Yasuro Yamane ◽

...

Keyword(s):

Vapor Phase ◽

Electron Mobility ◽

High Performance ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Composite Channel ◽

Organic Vapor ◽

Electron Mobility Transistors ◽

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