Effects of annealing temperature and Al2O3 buffer layer on ZnO thin films grown by atomic layer deposition

AbstractThe SrTa2O6 (STO) thin films were prepared by plasma enhanced atomic layer deposition (PEALD) with alternating supply of reactant sources, Sr[Ta(C2H5O)5(C4H10NO)]2 {Strontium bis-[tantalum penta-ethoxide dimethyllaminoethoxide]; Sr(Ta(OEt)5▪dmae)2} and O2plasma. It was observed that the uniform and conformal STO thin films were successfully deposited using PEALD and the film thickness per cycle was saturated at about 0.8 nm at 300°C. Electrical properties of SrTa2O6 (STO) thin films prepared on Pt/SiO2/Si substrates with annealing temperatures have been investigated. While the grain size and dielectric constant of STO films increased with increasing annealing temperature, the leakage current characteristics of STO films slightly deteriorated. The leakage current density of a 40nm-STO film was about 5×10−8A/cm2 at 3V.

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Preparation of boron-doped ZnO thin films by photo-atomic layer deposition

Solar Energy Materials and Solar Cells ◽

10.1016/s0927-0248(00)00086-6 ◽

2001 ◽

Vol 65 (1-4) ◽

pp. 125-132 ◽

Cited By ~ 81

Author(s):

Y. Yamamoto ◽

K. Saito ◽

K. Takahashi ◽

M. Konagai

Keyword(s):

Thin Films ◽

Atomic Layer Deposition ◽

Atomic Layer ◽

Zno Thin Films ◽

Boron Doped ◽

Layer Deposition ◽

Doped Zno

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Effective Oxygen-Defect Passivation in ZnO Thin Films Prepared by Atomic Layer Deposition Using Hydrogen Peroxide

Journal of the Korean Ceramic Society ◽

10.4191/kcers.2019.56.3.11 ◽

2019 ◽

Vol 56 (3) ◽

pp. 302-307

Author(s):

Yue Wang ◽

Kyung-Mun Kang ◽

Minjae Kim ◽

Hyung-Ho Park

Keyword(s):

Thin Films ◽

Hydrogen Peroxide ◽

Atomic Layer Deposition ◽

Atomic Layer ◽

Zno Thin Films ◽

Oxygen Defect ◽

Layer Deposition ◽

Defect Passivation

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Effects of Substrate Temperature on the Microstructure and Photoluminescence Properties of ZnO Thin Films by Atomic Layer Deposition

Korean Journal of Materials Research ◽

10.3740/mrsk.2005.15.11.741 ◽

2005 ◽

Vol 15 (11) ◽

pp. 741-744 ◽

Cited By ~ 2

Author(s):

Jong-Min Lim ◽

Chong-Mu Lee

Keyword(s):

Thin Films ◽

Atomic Layer Deposition ◽

Substrate Temperature ◽

Atomic Layer ◽

Zno Thin Films ◽

Photoluminescence Properties ◽

Layer Deposition

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Effects of Annealing Atmosphere on the Optoelectrical Properties of ZnO Thin Films Grown by Atomic Layer Deposition

Materials Science Forum ◽

10.4028/www.scientific.net/msf.510-511.670 ◽

2006 ◽

Vol 510-511 ◽

pp. 670-673 ◽

Cited By ~ 2

Author(s):

Chong Mu Lee ◽

Yeon Kyu Park ◽

Anna Park ◽

Choong Mo Kim

Keyword(s):

Thin Films ◽

Atomic Layer Deposition ◽

Atomic Layer ◽

Xrd Analysis ◽

Nitrogen Atmosphere ◽

Zno Thin Films ◽

Zno Films ◽

Annealing Atmosphere ◽

Zno Film ◽

Layer Deposition

This paper investigated the effects of annealing atmosphere on the carrier concentration, carrier mobility, electrical resistivity, and PL characteristics as well as the crystallinity of ZnO films deposited on sapphire substrates by atomic layer deposition (ALD). X-ray diffraction (XRD) and photoluminescence (PL) analyses, and Hall measurement were performed to investigate the crystallinity, optical properties and electrical properties of the ZnO thin films, respectively. According to the XRD analysis results, the crystallinity of the ZnO film annealed in an oxygen atmosphere is better than that of the ZnO film annealed in a nitrogen atmosphere. It was found that annealing undoped ZnO films grown by ALD at a high temperature above 600°C improves the crystallinity and enhances UV emission.

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