In situ growth of high-quality wafer-scale graphene on dielectric substrate for high-responsivity ultraviolet photodetector

Carbon ◽  
2020 ◽  
Author(s):  
Yang Chen ◽  
Ke Jiang ◽  
Hang Zang ◽  
Jianwei Ben ◽  
Shanli Zhang ◽  
...  
Keyword(s):  
Dielectric Substrate ◽  
In Situ Growth ◽  
Ultraviolet Photodetector ◽  
High Quality ◽  
Wafer Scale ◽  
High Responsivity

Epitaxial growth manner and structure of superconducting oxide films

1990 ◽  
Vol 48 (4) ◽  
pp. 2-3
Author(s):  
Yoshichika Bando ◽  
Takahito Terashima ◽  
Kenji Iijima ◽  
Kazunuki Yamamoto ◽  
Kazuto Hirata ◽  
...  
Keyword(s):  
Ultrathin Films ◽  
Film Surface ◽  
High Energy ◽  
Epitaxial Films ◽  
Layer By Layer ◽  
Initial Growth ◽  
In Situ Growth ◽  
High Quality ◽  
Activated Reactive Evaporation

The high quality thin films of high-Tc superconducting oxide are necessary for elucidating the superconducting mechanism and for device application. The recent trend in the preparation of high-Tc films has been toward “in-situ” growth of the superconducting phase at relatively low temperatures. The purpose of “in-situ” growth is to attain surface smoothness suitable for fabricating film devices but also to obtain high quality film. We present the investigation on the initial growth manner of YBCO by in-situ reflective high energy electron diffraction (RHEED) technique and on the structural and superconducting properties of the resulting ultrathin films below 100Å. The epitaxial films have been grown on (100) plane of MgO and SrTiO, heated below 650°C by activated reactive evaporation. The in-situ RHEED observation and the intensity measurement was carried out during deposition of YBCO on the substrate at 650°C. The deposition rate was 0.8Å/s. Fig. 1 shows the RHEED patterns at every stage of deposition of YBCO on MgO(100). All the patterns exhibit the sharp streaks, indicating that the film surface is atomically smooth and the growth manner is layer-by-layer.

scholarly journals In situ growth of large-area and self-aligned graphene nanoribbon arrays on liquid metal

2020 ◽  
Author(s):  
Le Cai ◽  
Wanzhen He ◽  
Xudong Xue ◽  
Jianyao Huang ◽  
Ke Zhou ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Graphene Nanoribbons ◽  
Chemical Vapour ◽  
Copper Surface ◽  
In Situ Growth ◽  
Large Area ◽  
High Quality ◽  
Hydrogen Flow ◽  
Template Free

Abstract Intrinsic graphene features semi-metallic characteristics that limit its applications in electronic devices, whereas graphene nanoribbons (GNRs) are promising semiconductors owing to their bandgap-opening feature. However, the controllable mass-fabrication of high-quality GNR arrays remains a major challenge. In particular, the in situ growth of GNR arrays through template-free chemical vapour deposition (CVD) has not been realized. Herein, we report a template-free CVD strategy to grow large-area, high-quality, and self-aligned GNR arrays on the liquid copper surface. The width of as-grown GNR could be optimized to sub-10 nm with aspect ratio up to 387, which is higher than those of reported CVD-GNRs. The study of the growth mechanism indicates that a unique comb-like etching-regulated growth process caused by a trace hydrogen flow guides the formation of the mass-produced self-aligned GNR arrays. Our approach is operationally simple and efficient, offering an assurance for the use of GNR arrays in integrated circuits.

scholarly journals In situ growth of capping-free magnetic iron oxide nanoparticles on liquid-phase exfoliated graphene

Nanoscale ◽  
2015 ◽  
Vol 7 (19) ◽  
pp. 8995-9003 ◽  
Author(s):  
T. Tsoufis ◽  
Z. Syrgiannis ◽  
N. Akhtar ◽  
M. Prato ◽  
F. Katsaros ◽  
...  
Keyword(s):  
Iron Oxide ◽  
Liquid Phase ◽  
Iron Oxide Nanoparticles ◽  
Oxide Nanoparticles ◽  
Graphene Sheets ◽  
In Situ Growth ◽  
Magnetic Iron Oxide Nanoparticles ◽  
High Quality ◽  
Exfoliated Graphene

We report a facile approach for the in situ synthesis of very small iron oxide nanoparticles on the surface of high-quality graphene sheets.

In Situ Growth of High Quality Epitaxial Yba2cu3O7‐X Thin Films at Moderate Temperatures by Pulsed Laser Ablation

1989 ◽  
Vol 169 ◽  
Author(s):  
Douglas H. Lowndes ◽  
David P. Norton ◽  
J. W. Mccamy ◽  
R. Feenstra ◽  
J. D. Budai ◽  
...  
Keyword(s):  
Laser Ablation ◽  
Film Growth ◽  
Laser Energy ◽  
Thickness Variation ◽  
In Situ Growth ◽  
High Quality ◽  
Higher Temperature ◽  
Laser Beam Scanning ◽  
Rotating Target

AbstractPulsed KrF (248 nm) laser ablation has been used for in situ growth of smooth, high‐quality YBa2Cu3O7‐x epitaxial films of variable thickness on SrTiO3, KTaO3, LaGaO3, LaA1O3, cubic ZrO2, and MgO substrates, at temperatures of ∼60O‐730°C, without higher temperature post‐annealing. A rotating target pellet, fine focusing by a single cylindrical lens, laser‐beam scanning over the target, and laser energy densities ∼2.5‐3 J/cm2 can be combined to yield films of completely uniform composition and with ∼25% thickness variation over areas ∼8 cm2. The best films have Tc > 92 K and JC(H = 0, T = 77 K) > 2 MA/cm2. Film‐growth procedures are described, together with results of superconducting and normal‐state transport measurements.

scholarly journals In Situ Growth of High Quality Crystals for Organic Electronics

2020 ◽  
Vol 2 (3) ◽  
pp. 790-795
Author(s):  
Ilya Bronshtein ◽  
Gregory Leitus ◽  
Boris Rybtchinski
Keyword(s):  
Organic Electronics ◽  
In Situ Growth ◽  
High Quality

scholarly journals White-light induced grafting of 3-MPA on the Si(111)–H surface for catalyzing Au nanoparticles’ in situ growth

Nanoscale ◽  
2015 ◽  
Vol 7 (21) ◽  
pp. 9563-9569 ◽  
Author(s):  
Li-Kun Yang ◽  
Ya-Qiong Su ◽  
Xiao-Ying Wu ◽  
Da-Xiao Zhang ◽  
Yan-Li Chen ◽  
...  
Keyword(s):  
White Light ◽  
Silicon Surface ◽  
Au Nanoparticles ◽  
In Situ Growth ◽  
Organic Monolayers ◽  
High Quality

A novel, mild and effective method was designed for grafting of high-quality organic monolayers on a silicon surface to catalyze nanoparticles’ growth.

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