An enhancement algorithm based on adaptive updating template with Gaussian model for Si3N4 ceramic bearing roller surface defects detection

2021 ◽  
Author(s):  
Yu Dongling ◽  
Zhang Xiaohui ◽  
Zhou Jianzhen ◽  
Wu Nanxing
Keyword(s):  
Surface Defects ◽  
Gaussian Model ◽  
Si3n4 Ceramic ◽  
Roller Surface ◽  
Ceramic Bearing ◽  
Enhancement Algorithm

scholarly journals Research on the Intelligent Recognition System of Printing Roller Surface Defects Based on Machine Vision

2020 ◽  
Vol 1518 ◽  
pp. 012058
Author(s):  
Chen Liang ◽  
Sun Hanxv ◽  
Jia Qingxuan ◽  
Zhang Yanheng ◽  
Cao Shaozhong ◽  
...  
Keyword(s):  
Machine Vision ◽  
Surface Defects ◽  
Recognition System ◽  
Roller Surface ◽  
Intelligent Recognition

Cratering due to surface defects in the Gaussian model

1983 ◽  
Vol 78 (1) ◽  
pp. 529-535 ◽  
Author(s):  
Ernst Nowak ◽  
J. M. Deutch ◽  
A. Nihat Berker
Keyword(s):  
Surface Defects ◽  
Gaussian Model

Erratum: Cratering due to surface defects in the Gaussian model [J. Chem. Phys. 78, 529 (1983)]

1983 ◽  
Vol 78 (11) ◽  
pp. 7017-7017
Author(s):  
Ernst Nowak ◽  
J. M. Deutch ◽  
A. Nihat Berker
Keyword(s):  
Surface Defects ◽  
Gaussian Model ◽  
Chem Phys

scholarly journals A Method for Identifying Defects on Highly Reflective Roller Surface Based on Image Library Matching

2020 ◽  
Vol 2020 ◽  
pp. 1-9
Author(s):  
Wei Shao ◽  
Peng Peng ◽  
Yunqiu Shao ◽  
Awei Zhou
Keyword(s):  
Visual Recognition ◽  
Surface Defects ◽  
Experimental Tests ◽  
Accurate Identification ◽  
Edge Information ◽  
Roller Surface ◽  
Reflective Surface ◽  
Identification Method ◽  
Image Library

Identification of the highly reflective surface defects on roller parts is a requirement to assure high quality of parts. However, the highly reflective roller surface has the reflection characteristics, which easily lead to the missed detection or wrong detection of defect targets in the visual recognition process. For this problem, a new identification method based on image library matching is proposed. First, to protect the edge information of the defect target while eliminating noise, preprocessing of the measured initial images can be accomplished by using the accelerated optimized bilateral filtering. Second, the entropy and grid gray gradient are used to achieve rough segmentation of highly reflective surface defects on roller parts. Finally, a defect fine identification method based on the Hu invariant moment matching integrated with morphological classification is proposed for achieving image library matching and further quickly removing the pseudodefects. Experimental tests were conducted to verify the effectiveness of the proposed method in achieving accurate identification of highly reflective surface defects on roller parts. The proposed method has an accuracy of 98.2%, and the running time can basically meet the requirements of real-time performance.

Defects in Crystals

1968 ◽  
Vol 26 ◽  
pp. 244-245
Author(s):  
Kenneth R. Lawless
Keyword(s):  
Electron Microscope ◽  
Point Defects ◽  
Surface Defects ◽  
Chemical Properties ◽  
Material Point ◽  
Crystal Defects ◽  
Defects In Crystals ◽  
Irradiation Effects ◽  
Normal Lattice ◽  
Line Defects

One of the most important applications of the electron microscope in recent years has been to the observation of defects in crystals. Replica techniques have been widely utilized for many years for the observation of surface defects, but more recently the most striking use of the electron microscope has been for the direct observation of internal defects in crystals, utilizing the transmission of electrons through thin samples.Defects in crystals may be classified basically as point defects, line defects, and planar defects, all of which play an important role in determining the physical or chemical properties of a material. Point defects are of two types, either vacancies where individual atoms are missing from lattice sites, or interstitials where an atom is situated in between normal lattice sites. The so-called point defects most commonly observed are actually aggregates of either vacancies or interstitials. Details of crystal defects of this type are considered in the special session on “Irradiation Effects in Materials” and will not be considered in detail in this session.

Characterization of homoepitaxial diamond films by Electron microscopy

1991 ◽  
Vol 49 ◽  
pp. 880-881
Author(s):  
D.P. Malta ◽  
S.A. Willard ◽  
R.A. Rudder ◽  
G.C. Hudson ◽  
J.B. Posthill ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Surface Defects ◽  
Substrate Surface ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Polycrystalline Diamond ◽  
Large Degree ◽  
Rf Plasma ◽  
Semiconducting Diamond

Semiconducting diamond films have the potential for use as a material in which to build active electronic devices capable of operating at high temperatures or in high radiation environments. A major goal of current device-related diamond research is to achieve a high quality epitaxial film on an inexpensive, readily available, non-native substrate. One step in the process of achieving this goal is understanding the nucleation and growth processes of diamond films on diamond substrates. Electron microscopy has already proven invaluable for assessing polycrystalline diamond films grown on nonnative surfaces.The quality of the grown diamond film depends on several factors, one of which is the quality of the diamond substrate. Substrates commercially available today have often been found to have scratched surfaces resulting from the polishing process (Fig. 1a). Electron beam-induced current (EBIC) imaging shows that electrically active sub-surface defects can be present to a large degree (Fig. 1c). Growth of homoepitaxial diamond films by rf plasma-enhanced chemical vapor deposition (PECVD) has been found to planarize the scratched substrate surface (Fig. 1b).

Two structural states of the Z-band in cardiac and skeletal muscle

1989 ◽  
Vol 47 ◽  
pp. 1022-1023
Author(s):  
J.P. Schroeter ◽  
M.A. Goldstein ◽  
J.P. Bretaudiere ◽  
L.H. Michael ◽  
R.L. Sass
Keyword(s):  
Skeletal Muscle ◽  
Cross Section ◽  
Real Space ◽  
Contractile State ◽  
Contour Maps ◽  
False Color ◽  
Grey Scale ◽  
Fourier Filtering ◽  
Cardiac Muscles ◽  
Enhancement Algorithm

We have recently established the existence of two structural states of the Z band lattice in cross section in cardiac as well as in skeletal muscle. The two structural states are related to the contractile state of the muscle. In skeletal muscle at rest, the Z band is in the small square (ss) lattice form, but tetanized muscle exhibits the basket weave (bw) form. In contrast, unstimu- lated cardiac muscle exhibits the bw form, but cardiac muscles exposed to EGTA show the ss form.We have used two-dimensional computer enhancement techniques on digitized electron micrographs to compare each lattice form as it appears in both cardiac and skeletal muscle. Both real space averaging and fourier filtering methods were used. Enhanced images were displayed as grey-scale projections, as contour maps, and in false color.There is only a slight difference between the lattices produced by the two different enhancement techniques. Thus the information presented in these images is not likely to be an artifact of the enhancement algorithm.

Microstructure of sputter deposited Ni-Sb ohmic contacts on GaAs

1989 ◽  
Vol 47 ◽  
pp. 450-451
Author(s):  
S. Yegnasubramanian ◽  
V.C. Kannan ◽  
R. Dutto ◽  
P.J. Sakach
Keyword(s):  
High Performance ◽  
Ohmic Contacts ◽  
Surface Defects ◽  
Pure Metal ◽  
Device Fabrication ◽  
Native Oxide ◽  
Metal Thin Films ◽  
Recent Developments ◽  
Different Temperatures ◽  
Sputter Deposited

Recent developments in the fabrication of high performance GaAs devices impose crucial requirements of low resistance ohmic contacts with excellent contact properties such as, thermal stability, contact resistivity, contact depth, Schottky barrier height etc. The nature of the interface plays an important role in the stability of the contacts due to problems associated with interdiffusion and compound formation at the interface during device fabrication. Contacts of pure metal thin films on GaAs are not desirable due to the presence of the native oxide and surface defects at the interface. Nickel has been used as a contact metal on GaAs and has been found to be reactive at low temperatures. Formation Of Ni2 GaAs at 200 - 350C is reported and is found to grow epitaxially on (001) and on (111) GaAs, but is shown to be unstable at 450C. This paper reports the investigations carried out to understand the microstructure, nature of the interface and composition of sputter deposited and annealed (at different temperatures) Ni-Sb ohmic contacts on GaAs by TEM. Attempts were made to correlate the electrical properties of the films such as the sheet resistance and contact resistance, with the microstructure. The observations are corroborated by Scanning Auger Microprobe (SAM) investigations.

Contrasts of planar defects in reflection electron microscopy

1993 ◽  
Vol 51 ◽  
pp. 1004-1005
Author(s):  
Feng Tsai ◽  
J. M. Cowley
Keyword(s):  
Electron Microscopy ◽  
Surface Defects ◽  
Practical Importance ◽  
Theoretical Treatment ◽  
Crystal Surfaces ◽  
Planar Defects ◽  
Surface Steps ◽  
Surface Reconstructions ◽  
Domain Boundaries ◽  
Reflection Electron Microscopy

Reflection electron microscopy (REM) has been used to study surface defects such as surface steps, dislocations emerging on crystal surfaces, and surface reconstructions. However, only a few REM studies have been reported about the planar defects emerging on surfaces. The interaction of planar defects with surfaces may be of considerable practical importance but so far there seems to be only one relatively simple theoretical treatment of the REM contrast and very little experimental evidence to support its predications. Recently, intersections of both 90° and 180° ferroelectric domain boundaries with BaTiO3 crystal surfaces have been investigated by Tsai and Cowley with REM.The REM observations of several planar defects, such as stacking faults and domain boundaries have been continued by the present authors. All REM observations are performed on a JEM-2000FX transmission electron microscope. The sample preparations may be seen somewhere else. In REM, the incident electron beam strikes the surface of a crystal with a small glancing angle.

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