On the Potential of Gallium- and Indium-Based Liquid Metal Membranes for Hydrogen Separation

The concept of liquid metal membranes for hydrogen separation, based on gallium or indium, was recently introduced as an alternative to conventional palladium-based membranes. The potential of this class of gas separation materials was mainly attributed to the promise of higher hydrogen diffusivity. The postulated improvements are only beneficial to the flux if diffusion through the membrane is the rate-determining step in the permeation sequence. Whilst this is a valid assumption for hydrogen transport through palladium-based membranes, the relatively low adsorption energy of hydrogen on both liquid metals suggests that other phenomena may be relevant. In the current study, a microkinetic modeling approach is used to enable simulations based on a five-step permeation mechanism. The calculation results show that for the liquid metal membranes, the flux is limited by the dissociative adsorption over a large temperature range, and that the membrane flux is expected to be orders of magnitude lower compared to the membrane flux through pure palladium membranes. Even when accounting for the lower cost of the liquid metals compared to palladium, the latter still outperforms both gallium and indium in all realistic scenarios, in part due to the practical difficulties associated with making liquid metal thin films.

Lift-Off Ablation of Metal Thin Films for Micropatterning Using Ultrashort Laser Pulses

Laser ablation of metal thin films draws attention as a fast means of clean micropatterning. In this study, we attempt to remove only the metal thin film layer selectively without leaving thermal damage on the underneath substrate. Specifically, our single-pulse ablation experiment followed by two-temperature analysis explains that selective ablation can be achieved for gold (Au) films of 50–100 nm thickness by the lift-off process induced as a result of vaporization of the titanium (Ti) interlayer with a strong electron–phonon coupling. With increasing the film thickness comparable to the mean free path of electrons (100 nm), the pulse duration has to be taken shorter than 10 ps, as high-temperature electrons generated by the ultrashort pulses transfer heat to the Ti interlayer. We verify the lift-off ablation by implementing millimeters-scale micropatterning of optoelectronic devices without degradation of optical properties.

Electropolishing—A Practical Method for Accessing Voids in Metal Films for Analyses

In many applications, voids in metals are observed as early degradation features caused by fatigue. In this publication, electropolishing is presented in the context of a novel sample preparation method that is capable of accessing voids in the interior of metal thin films along their lateral direction by material removal. When performed at optimized process parameters, material removal can be well controlled and the surface becomes smooth at the micro scale, resulting in the voids being well distinguishable from the background in scanning electron microscopy images. Compared to conventional cross-sectional sample preparation (embedded mechanical cross-section or focused ion beam), the accessed surface is not constrained by the thickness of the investigated film and laterally resolved void analyses are possible. For demonstrational purposes of this method, the distribution of degradation voids along the metallization of thermo-mechanically stressed microelectronic chips has been quantified.

Nanoscale Soft Wetting Observed in Co/Sapphire during Pulsed Laser Irradiation

Liquid drops on deformable soft substrates exhibit quite complicated wetting behavior as compared to those on rigid solid substrates. We report on a soft wetting behavior of Co nanoparticles (NPs) on a sapphire substrate during pulsed laser-induced dewetting (PLID). Co NPs produced by PLID wetted the sapphire substrate with a contact angle near 70°, which is in contrast to typical dewetting behavior of metal thin films exhibiting contact angles greater than 90°. In addition, a nanoscale γ-Al2O3 wetting ridge about 15 nm in size and a thin amorphous Al2O3 interlayer were observed around and beneath the Co NP, respectively. The observed soft wetting behavior strongly indicates that the sapphire substrate became soft and deformable during PLID. Moreover, the soft wetting was augmented under PLID in air due to the formation of a CoO shell, resulting in a smaller contact angle near 30°.

Thermal atomic layer deposition of rhenium nitride and rhenium metal thin films using methyltrioxorhenium

The growth of rhenium nitride and rhenium metal thin films is presented using atomic layer deposition (ALD) with the precursors methyltrioxorhenium and 1,1-dimethylhydrazine. Saturative, self-limiting growth was determined at 340...