High temperature thermal conductivity of free-standing diamond films prepared by DC arc plasma jet CVD

2014 ◽  
Vol 50 ◽  
pp. 55-59 ◽  
Author(s):  
R.H. Zhu ◽  
J.Y. Miao ◽  
J.L. Liu ◽  
L.X. Chen ◽  
J.C. Guo ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
High Temperature ◽  
Diamond Films ◽  
Plasma Jet ◽  
Arc Plasma ◽  
Free Standing ◽  
Dc Arc

Analysis of Interface between Free-Standing Diamond Films and Mo Substrates

2005 ◽  
Vol 475-479 ◽  
pp. 3615-3618
Author(s):  
Hui Qing Li ◽  
Cheng Ming Li ◽  
Guang Chao Chen ◽  
Fan Xiu Lu ◽  
Yu Mei Tong
Keyword(s):  
Phase Composition ◽  
Amorphous Carbon ◽  
Time Use ◽  
Diamond Films ◽  
Plasma Jet ◽  
Arc Plasma ◽  
Free Standing ◽  
Dc Arc ◽  
First Time ◽  
Gas Recycling

Interfaces between Mo substrate and free-standing diamond films prepared by DC arc plasma jet operated at gas recycling mode were investigated, including for the first time used and multi-time used substrate. The morphology, phase composition and bonding state of elements in the interface between substrates and diamond films were examined by optical microscopy, XRD and XPS. The profiles of carbon concentration of Mo substrates were measured by GDOES. It showed that Mo2C and MoC were formed on the first time used Mo substrate, and MoC was found on diamond films nucleation side after detachment. It suggested that MoC was peeled off from Mo substrate. The stable Mo2C on Mo substrate was formed after multi-time use of Mo substrate. However, MoC has not been found on it. The thickness of carburizing layer on the first time used Mo substrate is up to 30µm, and the carburizing layer on the multi-time used substrate is much thicker than that on the first used. The amorphous carbon in the surface of the substrate and nucleation side of diamond films was found by XPS, including for the first time used and multi-time used substrate.

Free-standing diamond films deposited by DC arc plasma jet on graphite substrates with a destroyable Ti interlayer

2009 ◽  
Vol 18 (11) ◽  
pp. 1348-1352 ◽  
Author(s):  
Chengming Li ◽  
Limei Wang ◽  
Liangxian Chen ◽  
Zheng Liu ◽  
Lifu Hei ◽  
...  
Keyword(s):  
Diamond Films ◽  
Plasma Jet ◽  
Arc Plasma ◽  
Free Standing ◽  
Dc Arc

Erosion difference of growth and nucleation sides of free-standing diamond films prepared by DC arc plasma jet CVD

2015 ◽  
Vol 355 ◽  
pp. 203-208 ◽  
Author(s):  
R.H. Zhu ◽  
C.M. Li ◽  
L.X. Chen ◽  
J.L. Liu ◽  
J.J. Wei ◽  
...  
Keyword(s):  
Diamond Films ◽  
Plasma Jet ◽  
Arc Plasma ◽  
Free Standing ◽  
Dc Arc

Fracture behavior of diamond films deposited by DC arc plasma jet CVD

2018 ◽  
Vol 44 (11) ◽  
pp. 13402-13408 ◽  
Author(s):  
Kang An ◽  
Liangxian Chen ◽  
Xiongbo Yan ◽  
Xin Jia ◽  
Yun Zhao ◽  
...  
Keyword(s):  
Fracture Behavior ◽  
Diamond Films ◽  
Plasma Jet ◽  
Arc Plasma ◽  
Dc Arc

Effects of nitrogen addition on morphology and mechanical property of DC arc plasma jet CVD diamond films

2004 ◽  
Vol 13 (1) ◽  
pp. 139-144 ◽  
Author(s):  
J.X Yang ◽  
H.D Zhang ◽  
C.M Li ◽  
G.C Chen ◽  
F.X Lu ◽  
...  
Keyword(s):  
Mechanical Property ◽  
Diamond Films ◽  
Plasma Jet ◽  
Nitrogen Addition ◽  
Cvd Diamond ◽  
Arc Plasma ◽  
Dc Arc

OES study of the gas phase during diamond films deposition in high power DC arc plasma jet CVD system

2006 ◽  
Vol 15 (5) ◽  
pp. 980-984 ◽  
Author(s):  
Zhou Zu-Yuan ◽  
Chen Guang-Chao ◽  
Tang Wei-Zhong ◽  
Lü Fan-Xiu
Keyword(s):  
Gas Phase ◽  
High Power ◽  
Diamond Films ◽  
Plasma Jet ◽  
Arc Plasma ◽  
Dc Arc

Growth feature of layered self-standing diamond films by DC arc plasma jet CVD

2007 ◽  
Vol 309 (1) ◽  
pp. 86-92 ◽  
Author(s):  
G.C. Chen ◽  
H. Lan ◽  
B. Li ◽  
F.W. Dai ◽  
S.J. Askari ◽  
...  
Keyword(s):  
Diamond Films ◽  
Plasma Jet ◽  
Arc Plasma ◽  
Growth Feature ◽  
Dc Arc

Diamond Films Synthesis with a DC Arc Plasma Jet: Effect of Substrate Temperature on Quality of Diamond Films

2011 ◽  
Vol 175 ◽  
pp. 245-248
Author(s):  
Rong Fa Chen ◽  
Liang Gang Dai ◽  
Rui Zhu ◽  
Xian Liang Zhang ◽  
Tao Liu ◽  
...  
Keyword(s):  
Substrate Temperature ◽  
Diamond Film ◽  
Diamond Films ◽  
Plasma Jet ◽  
Sem Analysis ◽  
Arc Plasma ◽  
X Ray Diffraction ◽  
Dc Arc ◽  
Substrate Temperatures

. High quality diamond film wafers with different thickness are prepared by high power DC arc plasma jet CVD (DCPJ CVD) method using a CH4/Ar/H2 gas mixture. The effect of substrate temperature on the quality of diamond film was studied with theoretical analysis and experimental investigation. The results indicate that different structures in diamond film may grow with different substrate temperatures. The temperatures of 800°C, 900°C and 1000°C were tested in the experiments. The quality of diamond film showed the best at the temperature of 900°C. Characterization by X-ray diffraction, Raman spectroscopy and SEM analysis are also carried out.

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