Plasma focus method for growth of molybdenum nitride thin films: Synthesis and thin film characterization

2017 ◽  
Vol 727 ◽  
pp. 978-985 ◽  
Author(s):  
Marzieh Shirazi ◽  
Maryam Ghasemloo ◽  
G. Reza Etaati ◽  
Mohammad Taghi Hosseinnejad ◽  
Mohammad Reza Toroghinejad
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Plasma Focus ◽  
Molybdenum Nitride ◽  
Thin Film Characterization

Thin Film Characterization Using the Point-Deflection Method

2001 ◽  
Vol 695 ◽  
Author(s):  
Ning Tang ◽  
Roxann L. Engelstad ◽  
Edward G. Lovell
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Transverse Load ◽  
Internal Stresses ◽  
Boundary Constraints ◽  
Thin Film Characterization ◽  
Out Of Plane ◽  
Average Internal Stress ◽  
Low Sensitivity ◽  
Plane Displacement

ABSTRACTThe Point-Deflection Method is a potentially useful technique for measuring the internal stresses of freestanding thin films. By applying a small concentrated transverse load at the center of a pre-stretched film, and measuring the corresponding out-of-plane displacement at appropriate locations, the average internal stress can be readily determined. The load-deflection relationship has been derived for both circular and rectangular shapes. The method involves no additional micromachining in sample preparation and has low sensitivity to the variations in boundary constraints. Its feasibility has been further substantiated with finite element simulations from a variety of perspectives, as well as experimental correlations from the stress measurements of a photomask pellicle film.

Structural, Morphological and Mechanical Characterisation of Molybdenum Nitride Thin Films Deposited by a Plasma Focus Device

2017 ◽  
Vol 41 (12) ◽  
pp. 699-704
Author(s):  
Mohammad Taghi Hosseinnejad ◽  
Mehdi Ettehadi-Abari ◽  
Naser Panahi
Keyword(s):  
Thin Films ◽  
Electrical Resistivity ◽  
Plasma Focus ◽  
Photoelectron Spectroscopy ◽  
Plasma Focus Device ◽  
Morphological Properties ◽  
Degree Of Crystallinity ◽  
Root Mean Square Roughness ◽  
Molybdenum Nitride ◽  
X Ray

This research focuses on the characterisation of nanostructured molybdenum nitride (MoN) thin films deposited on glass substrates at room temperature using a low-energy (1.1 kJ) plasma focus device. The nanostructure, surface morphology, electrical resistivity and mechanical properties of MoN thin films were studied in terms of the number of shots required to prepare them. X-ray diffraction (XRD) analysis indicated that all of the deposited layers were polycrystalline in nature, possessing the γ-Mo2N (fcc) structure. The XRD results also revealed that the degree of crystallinity and residual stress of the thin films were strongly dependent on the number of shots. X-ray photoelectron spectroscopy showed the Mo 3d3/2, Mo 3d5/2, Mo 3p3/2 and N 1s peaks for all of the thin films, confirming the formation of the γ-Mo2N structure. Scanning electron microscopy images showed the growth of granular structures and then the formation of larger-sized agglomerates on the surfaces of the samples with increasing numbers of shots. Atomic force microscopy indicated that grain sizes on surface layers as well as the average and root mean square roughness increased for samples deposited with more shots. Furthermore, the variations in hardness and electrical resistivity of the deposited MoN thin films were qualitatively explained on the basis of the morphological properties of the samples.

Characteristics of Molybdenum Nitride Thin Film by N2+ Ion Implantation

1999 ◽  
Vol 563 ◽  
Author(s):  
Dong Joon Kim ◽  
Ik-Soo Kim ◽  
Yong Tae Kim ◽  
Jong-Wan Park
Keyword(s):  
Thin Film ◽  
Crystal Structure ◽  
Thin Films ◽  
Thermal Stability ◽  
Tensile Stress ◽  
Ion Implantation ◽  
Molybdenum Nitride ◽  
Si Substrate ◽  
Post Annealing ◽  
Thermal Stability Of

AbstractMolybdenum nitride thin films were prepared by N2+ implantation with acceleration energy of 20 keV and the ion dose of 3×1017 ions/cm2. The structural property and thermal stability of the films were investigated by XRD, AES, AFM and RBS. The crystal structure of N2+ implanted molybdenum thin films (Mo-N2+) which had microcrystalline state was transformed to γ-Mo2N phase with a preferred (111) orientation after a post-annealing at 500 °C for 30min. However, a silicide reaction was not observed even after the annealing at 700 °C, which is due to the modification of the interface between Mo thin film and Si substrate by N2+ implantation. Also, Cu diffusion did not seem to be induced by the annealing at 700 °C for 30 min. The internal stress of the Mo-N2+ thin films during post-annealing at 600 °C for 30min was found to change from highly compressive stress to low tensile stress.

Wide-range three-dimensional reciprocal-space mapping: a novel approach applied to organic monodomain thin films

2007 ◽  
Vol 40 (3) ◽  
pp. 580-582 ◽  
Author(s):  
R. Resel ◽  
O. Lengyel ◽  
T. Haber ◽  
O. Werzer ◽  
W. Hardeman ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Three Dimensional ◽  
Reciprocal Space ◽  
Ray Method ◽  
Reciprocal Space Mapping ◽  
X Ray ◽  
Novel Approach ◽  
Wide Range ◽  
Thin Film Characterization

An X-ray method is presented to characterize thin films with unknown crystal structure with specific crystal orientations. The method maps large volumes of the reciprocal space by a series of pole-figure measurements using a standard texture goniometer. The data can be used for lattice indexing and texture evaluation and in subsequent steps for a complete structural thin-film characterization. The application of the method is demonstrated on an organic monodomain thin film consisting of uniaxially aligned crystallites.

NOISE REDUCTION IN TERAHERTZ THIN FILM MEASUREMENTS USING A DOUBLE MODULATED DIFFERENTIAL TECHNIQUE

2002 ◽  
Vol 02 (01) ◽  
pp. R13-R28 ◽  
Author(s):  
SAMUEL P. MICKAN ◽  
DEREK ABBOTT ◽  
JESPER MUNCH ◽  
X.-C. ZHANG
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Integrated Circuits ◽  
Noise Reduction ◽  
Time Domain ◽  
Noise Levels ◽  
Differential Technique ◽  
Thin Film Characterization ◽  
Double Modulation

Differential terahertz (THz) time-domain spectroscopy (TDS) is a technique for decreasing noise levels in THz thin film characterization experiments. Characterizing thin films in the GHz to THz range is critical for the development of fast integrated circuits and photonic systems, and is potentially applicable to biosensors and proteomics. This paper shows how the differential technique, combined with double modulation, enables the study of thin films with noise reduction over normal TDS that improves at the film gets thinner. Double modulated differential THz-TDS has enabled the characterization of films with less than 1-μm thickness.

Investigation of the physical, optical, and chemical properties of phase segregated AlCoOx thin films from a novel hexol-type cluster

2021 ◽  
Author(s):  
Jordan D. Levine ◽  
Meredith C. Sharps ◽  
Elizabeth A. Cochran ◽  
David A. Marsh ◽  
William H. Casey ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Oxide Film ◽  
Metal Oxide ◽  
Chemical Properties ◽  
Mixed Metal Oxide ◽  
Thin Film Characterization ◽  
Metal Oxide Film ◽  
And Chemical Properties

We report the fabrication and thin film characterization of an aluminum and cobalt mixed metal–oxide film that has been solution deposited from a novel hexol-type inorganic cluster.

Studies on Water in the Hydration Chamber of a Modified Electron Microscope

1970 ◽  
Vol 28 ◽  
pp. 544-545
Author(s):  
R. C. Moretz ◽  
G. G. Hausner ◽  
D. F. Parsons
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electron Microscope ◽  
Steady State ◽  
Room Temperature ◽  
Small Mass ◽  
Equilibrium Pressure ◽  
Biological Objects ◽  
Mechanical Pump ◽  
Differential Pumping

Use of the electron microscope to examine wet objects is possible due to the small mass thickness of the equilibrium pressure of water vapor at room temperature. Previous attempts to examine hydrated biological objects and water itself used a chamber consisting of two small apertures sealed by two thin films. Extensive work in our laboratory showed that such films have an 80% failure rate when wet. Using the principle of differential pumping of the microscope column, we can use open apertures in place of thin film windows.Fig. 1 shows the modified Siemens la specimen chamber with the connections to the water supply and the auxiliary pumping station. A mechanical pump is connected to the vapor supply via a 100μ aperture to maintain steady-state conditions.

Observations on the growth of YBa2Cu3O7-δ thin films on MgO by pulsed-laser ablation

1991 ◽  
Vol 49 ◽  
pp. 1068-1069
Author(s):  
M. Grant Norton ◽  
C. Barry Carter
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Laser Ablation ◽  
Substrate Surface ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Laser Ablation Process ◽  
Deposition Parameters

Pulsed-laser ablation has been widely used to produce high-quality thin films of YBa2Cu3O7-δ on a range of substrate materials. The nonequilibrium nature of the process allows congruent deposition of oxides with complex stoichiometrics. In the high power density regime produced by the UV excimer lasers the ablated species includes a mixture of neutral atoms, molecules and ions. All these species play an important role in thin-film deposition. However, changes in the deposition parameters have been shown to affect the microstructure of thin YBa2Cu3O7-δ films. The formation of metastable configurations is possible because at the low substrate temperatures used, only shortrange rearrangement on the substrate surface can occur. The parameters associated directly with the laser ablation process, those determining the nature of the process, e g. thermal or nonthermal volatilization, have been classified as ‘primary parameters'. Other parameters may also affect the microstructure of the thin film. In this paper, the effects of these ‘secondary parameters' on the microstructure of YBa2Cu3O7-δ films will be discussed. Examples of 'secondary parameters' include the substrate temperature and the oxygen partial pressure during deposition.

Microstructural characterization of YBa2Cu3O7-x thin films formed by metalorganic CVD

1991 ◽  
Vol 49 ◽  
pp. 1080-1081
Author(s):  
P. Lu ◽  
W. Huang ◽  
C.S. Chern ◽  
Y.Q. Li ◽  
J. Zhao ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Critical Current Density ◽  
Critical Current ◽  
Current Density ◽  
Film Growth ◽  
Chemical Vapor ◽  
Microstructural Characterization ◽  
Ion Milling ◽  
Conventional Grinding

The YBa2Cu3O7-x thin films formed by metalorganic chemical vapor deposition(MOCVD) have been reported to have excellent superconducting properties including a sharp zero resistance transition temperature (Tc) of 89 K and a high critical current density of 2.3x106 A/cm2 or higher. The origin of the high critical current in the thin film compared to bulk materials is attributed to its structural properties such as orientation, grain boundaries and defects on the scale of the coherent length. In this report, we present microstructural aspects of the thin films deposited on the (100) LaAlO3 substrate, which process the highest critical current density.Details of the thin film growth process have been reported elsewhere. The thin films were examined in both planar and cross-section view by electron microscopy. TEM sample preparation was carried out using conventional grinding, dimpling and ion milling techniques. Special care was taken to avoid exposure of the thin films to water during the preparation processes.

Determination of Stoichiometry of GaAs Component in (Gaas)Ge Epitaxially Grown Thin Films by Electron Microprobe X-Ray Analysis

1990 ◽  
Vol 48 (2) ◽  
pp. 264-265
Author(s):  
D. R. Liu ◽  
S. S. Shinozaki ◽  
R. J. Baird
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Compound Semiconductors ◽  
Energy Dispersive Analysis ◽  
X Ray ◽  
Metastable Alloys ◽  
Lower Voltage

The epitaxially grown (GaAs)Ge thin film has been arousing much interest because it is one of metastable alloys of III-V compound semiconductors with germanium and a possible candidate in optoelectronic applications. It is important to be able to accurately determine the composition of the film, particularly whether or not the GaAs component is in stoichiometry, but x-ray energy dispersive analysis (EDS) cannot meet this need. The thickness of the film is usually about 0.5-1.5 μm. If Kα peaks are used for quantification, the accelerating voltage must be more than 10 kV in order for these peaks to be excited. Under this voltage, the generation depth of x-ray photons approaches 1 μm, as evidenced by a Monte Carlo simulation and actual x-ray intensity measurement as discussed below. If a lower voltage is used to reduce the generation depth, their L peaks have to be used. But these L peaks actually are merged as one big hump simply because the atomic numbers of these three elements are relatively small and close together, and the EDS energy resolution is limited.

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