Optical properties of bulk GaN crystals grown from solution at moderate pressure and temperature

2008 ◽  
Vol 310 (17) ◽  
pp. 3941-3945 ◽  
Author(s):  
M. Gowda ◽  
J.A. Freitas ◽  
R.M. Frazier ◽  
B.N. Feigelson ◽  
M.V. Rao
Keyword(s):  
Optical Properties ◽  
Moderate Pressure ◽  
Bulk Gan

Optical properties of InGaN grown by MOCVD on sapphire and on bulk GaN

1999 ◽  
Author(s):  
Marek Osinski ◽  
Petr G. Eliseev ◽  
Jinhyun Lee ◽  
Vladimir A. Smagley ◽  
Tamoya Sugahara ◽  
...  
Keyword(s):  
Optical Properties ◽  
Bulk Gan

Modes of generation of the optical properties of a moderate-pressure nanosecond discharge with a slit cathode in argon

2009 ◽  
Vol 52 (4) ◽  
pp. 430-436 ◽  
Author(s):  
N. A. Ashurbekov ◽  
K. O. Iminov ◽  
V. S. Kobzeva ◽  
O. V. Kobzev
Keyword(s):  
Optical Properties ◽  
Moderate Pressure ◽  
Nanosecond Discharge

Electrical and optical properties of bulk GaN substrates studied by Kelvin probe and photoluminescence

2012 ◽  
Vol 10 (3) ◽  
pp. 536-539 ◽  
Author(s):  
J. D. McNamara ◽  
M. A. Foussekis ◽  
A. A. Baski ◽  
X. Li ◽  
V. Avrutin ◽  
...  
Keyword(s):  
Optical Properties ◽  
Kelvin Probe ◽  
Electrical And Optical Properties ◽  
Bulk Gan

Study of optical properties of bulk GaN crystals grown by HVPE

2016 ◽  
Vol 674 ◽  
pp. 218-222 ◽  
Author(s):  
Hong Gu ◽  
Guoqiang Ren ◽  
Taofei Zhou ◽  
Feifei Tian ◽  
Yu Xu ◽  
...  
Keyword(s):  
Optical Properties ◽  
Bulk Gan

First-principle study on electronic structure and optical properties of GaN nanowires with different cross-sections

2016 ◽  
Vol 30 (22) ◽  
pp. 1650136
Author(s):  
Yike Kong ◽  
Lei Liu ◽  
Sihao Xia ◽  
Honggang Wang ◽  
Meishan Wang
Keyword(s):  
Optical Properties ◽  
Cross Sections ◽  
Formation Energy ◽  
Comparative Investigation ◽  
Dielectric Constants ◽  
Cross Sectional ◽  
Gan Nanowires ◽  
Bulk Gan ◽  
Structure Density ◽  
The Stability

This paper explores the properties of intrinsic gallium nitride (GaN) nanowires (NWs) in terms of formation energy, band structure, density of state (DOS) and optical properties with plane-wave ultrasoft pseudopotential method based on first-principles. Results show that after relaxation, N atoms of the outer layers move outwards, while Ga atoms move inwards, and the relaxation of surface atomic structure appears less obvious with the increasing cross-sectional area. Comparing different cross-sections of GaN NWs, it is found that the formation energy decreases and the stability goes stronger with the increasing size. With the increasing cross-section, the bandgap is decreased. Moreover, through comparative investigation in optical properties between GaN NWs and bulk GaN, a valuable phenomenom is found that the static dielectric constants of GaN NWs are notably lower, which contributes remarkably to the excellent absorbing performance of GaN NWs.

scholarly journals Role of Central Atom on the Pressure Response of 2D Perovskites Containing a Long Alkyl Chain (Decylammonium, DA): DA2PbI4 and DA2GeI4

2021 ◽  
Author(s):  
Lorenzo Malavasi ◽  
Marta Morana ◽  
Boby Joseph ◽  
Mauro Coduri ◽  
Ausonio Tuissi ◽  
...  
Keyword(s):  
Optical Properties ◽  
Phase Separation ◽  
Alkyl Chain ◽  
Central Atom ◽  
Ambient Pressure ◽  
Pressure Response ◽  
Lead Free ◽  
White Lead ◽  
Moderate Pressure ◽  
Long Alkyl Chain

The application of an external pressure on Metal Halide Perovskite (MHPs) has become a fascinating way of tuning their optical properties, achieving also novel features. Here, the pressure response of 2D MHPs including a long alkyl chain made of ten carbon atoms, namely decylammonium (DA), has been investigated as a function of the central atom in DA2PbI4 and DA2GeI4. The two systems share a common trend in the phase stability, displaying a transition from an orthorhombic to a monoclinic phase around 2 GPa, followed by a phase separation in two monoclinic phases characterized by different c-axis. The optical properties show rather different behavior due to the presence of Pb or Ge. DA2PbI4 shows a progressive red shift of the band gap from 2.28 eV at ambient conditions, to 1.64 eV at 11.5 GPa, with a narrow PL emission composed by two components, with the second one appearing in concomitance with the phase separation and significantly shifted to lower energy. On the other hand, DA2GeI4, changes from a non-PL system at ambient pressure, to a clear broadband emitter centered around 730 nm (FWHM ~ 170 nm), with a large stoke shift, and an intensity maximum at about 3.7 GPa. This work sheds light on the structural stability of 2D perovskites characterized by extended alkyl chains, to date limited to four carbon atoms, and shows the pressure-induced emergence of broad emission in a novel lead-free perovskite, DA2GeI4. The evidence of wide emission by a moderate pressure in a germanium-based 2D MHP represents a novel result which may open the design, by chemical pressure, of efficient wide or even white lead-free emitters.

scholarly journals Optical properties of C-doped bulk GaN wafers grown by halide vapor phase epitaxy

2014 ◽  
Vol 116 (22) ◽  
pp. 223503 ◽  
Author(s):  
S. Khromov ◽  
C. Hemmingsson ◽  
B. Monemar ◽  
L. Hultman ◽  
G. Pozina
Keyword(s):  
Optical Properties ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Bulk Gan

Optical properties of InGaN/GaN quantum wells on sapphire and bulk GaN substrate

2006 ◽  
Vol 3 (6) ◽  
pp. 2078-2081 ◽  
Author(s):  
M. Dworzak ◽  
T. Stempel ◽  
A. Hoffmann ◽  
G. Franssen ◽  
S. Grzanka ◽  
...  
Keyword(s):  
Optical Properties ◽  
Quantum Wells ◽  
Bulk Gan

scholarly journals Microstructural dependency of optical properties of m-plane InGaN multiple quantum wells grown on 2° misoriented bulk GaN substrates

2015 ◽  
Vol 107 (8) ◽  
pp. 082104 ◽  
Author(s):  
Fengzai Tang ◽  
Jonathan S. Barnard ◽  
Tongtong Zhu ◽  
Fabrice Oehler ◽  
Menno J. Kappers ◽  
...  
Keyword(s):  
Optical Properties ◽  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Bulk Gan
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