Optical properties of InGaN grown by MOCVD on sapphire and on bulk GaN

1999 ◽  
Author(s):  
Marek Osinski ◽  
Petr G. Eliseev ◽  
Jinhyun Lee ◽  
Vladimir A. Smagley ◽  
Tamoya Sugahara ◽  
...  
Keyword(s):  
Optical Properties ◽  
Bulk Gan

Electrical and optical properties of bulk GaN substrates studied by Kelvin probe and photoluminescence

2012 ◽  
Vol 10 (3) ◽  
pp. 536-539 ◽  
Author(s):  
J. D. McNamara ◽  
M. A. Foussekis ◽  
A. A. Baski ◽  
X. Li ◽  
V. Avrutin ◽  
...  
Keyword(s):  
Optical Properties ◽  
Kelvin Probe ◽  
Electrical And Optical Properties ◽  
Bulk Gan

Study of optical properties of bulk GaN crystals grown by HVPE

2016 ◽  
Vol 674 ◽  
pp. 218-222 ◽  
Author(s):  
Hong Gu ◽  
Guoqiang Ren ◽  
Taofei Zhou ◽  
Feifei Tian ◽  
Yu Xu ◽  
...  
Keyword(s):  
Optical Properties ◽  
Bulk Gan

First-principle study on electronic structure and optical properties of GaN nanowires with different cross-sections

2016 ◽  
Vol 30 (22) ◽  
pp. 1650136
Author(s):  
Yike Kong ◽  
Lei Liu ◽  
Sihao Xia ◽  
Honggang Wang ◽  
Meishan Wang
Keyword(s):  
Optical Properties ◽  
Cross Sections ◽  
Formation Energy ◽  
Comparative Investigation ◽  
Dielectric Constants ◽  
Cross Sectional ◽  
Gan Nanowires ◽  
Bulk Gan ◽  
Structure Density ◽  
The Stability

This paper explores the properties of intrinsic gallium nitride (GaN) nanowires (NWs) in terms of formation energy, band structure, density of state (DOS) and optical properties with plane-wave ultrasoft pseudopotential method based on first-principles. Results show that after relaxation, N atoms of the outer layers move outwards, while Ga atoms move inwards, and the relaxation of surface atomic structure appears less obvious with the increasing cross-sectional area. Comparing different cross-sections of GaN NWs, it is found that the formation energy decreases and the stability goes stronger with the increasing size. With the increasing cross-section, the bandgap is decreased. Moreover, through comparative investigation in optical properties between GaN NWs and bulk GaN, a valuable phenomenom is found that the static dielectric constants of GaN NWs are notably lower, which contributes remarkably to the excellent absorbing performance of GaN NWs.

scholarly journals Optical properties of C-doped bulk GaN wafers grown by halide vapor phase epitaxy

2014 ◽  
Vol 116 (22) ◽  
pp. 223503 ◽  
Author(s):  
S. Khromov ◽  
C. Hemmingsson ◽  
B. Monemar ◽  
L. Hultman ◽  
G. Pozina
Keyword(s):  
Optical Properties ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Bulk Gan

Optical properties of InGaN/GaN quantum wells on sapphire and bulk GaN substrate

2006 ◽  
Vol 3 (6) ◽  
pp. 2078-2081 ◽  
Author(s):  
M. Dworzak ◽  
T. Stempel ◽  
A. Hoffmann ◽  
G. Franssen ◽  
S. Grzanka ◽  
...  
Keyword(s):  
Optical Properties ◽  
Quantum Wells ◽  
Bulk Gan

scholarly journals Microstructural dependency of optical properties of m-plane InGaN multiple quantum wells grown on 2° misoriented bulk GaN substrates

2015 ◽  
Vol 107 (8) ◽  
pp. 082104 ◽  
Author(s):  
Fengzai Tang ◽  
Jonathan S. Barnard ◽  
Tongtong Zhu ◽  
Fabrice Oehler ◽  
Menno J. Kappers ◽  
...  
Keyword(s):  
Optical Properties ◽  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Bulk Gan

Optical properties of bulk GaN crystals grown from solution at moderate pressure and temperature

2008 ◽  
Vol 310 (17) ◽  
pp. 3941-3945 ◽  
Author(s):  
M. Gowda ◽  
J.A. Freitas ◽  
R.M. Frazier ◽  
B.N. Feigelson ◽  
M.V. Rao
Keyword(s):  
Optical Properties ◽  
Moderate Pressure ◽  
Bulk Gan

Thermal and optical properties of bulk GaN crystals fabricated through hydride vapor phase epitaxy with void-assisted separation

2005 ◽  
Vol 98 (10) ◽  
pp. 103509 ◽  
Author(s):  
Yuichi Oshima ◽  
Takayuki Suzuki ◽  
Takeshi Eri ◽  
Yusuke Kawaguchi ◽  
Kazutoshi Watanabe ◽  
...  
Keyword(s):  
Optical Properties ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Bulk Gan
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