Three-dimensional analysis of dislocation multiplication in single-crystal silicon under accurate control of cooling history of temperature

ABSTRACTAn alternative three-dimensional (3D) Monte Carlo (MC) dynamic simulation model for phosphorus implant into (100) single-crystal silicon has been developed which incorporates the effects of channeling and damage. This model calculates the trajectories of both implanted ions and recoiled silicons and concurrently and explicitly affects both ions and recoils due to the presence of accumulative damage. In addition, the model for room-temperature implant accounts for the self-annealing effect using our defined recombination probabilities for vacancies and interstitials saved on the unit volumes. Our model has been verified by the comparison with the previously published SIMS data over commonly used energy range between 10 and 180 keV, using our proposed empirical electronic energy loss model. The 3D formations of the amorphous region and the ultra-shallow junction around the implanted region could be predicted by using our model, TRICSI (TRansport Ions into Crystal-Silicon).

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Selective Silicon Epitaxy for Advanced Dram Structures

MRS Proceedings ◽

10.1557/proc-158-339 ◽

1989 ◽

Vol 158 ◽

Author(s):

Gary B. Bronner

Keyword(s):

Single Crystal ◽

Three Dimensional ◽

Single Crystal Silicon ◽

Advanced Technology ◽

Memory Cells ◽

Crystal Silicon ◽

Silicon Epitaxy ◽

Silicon Devices ◽

The Future ◽

A Cell

ABSTRACTIn silicon microelectronics, memory cells and chips are used to develop the most advanced technology. In the future these chips will require three dimensional structures to achieve the needed density. This paper describes the use of selective silicon epitaxy to build truly three dimensional DRAM cells. The cell consists of a trench capacitor which is overgrown with single crystal silicon. A transistor and isolation are then built above the trench capacitor resulting in a cell that occupies the same area as the transistor alone. Fully functional memory cells have been built. The results show that selective silicon epitaxy is a realistic candidate for building three dimensional silicon devices.

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Fabrication of Three-Dimensional MIS Nano-Capacitor Based on Nanoimprinted Single Crystal Silicon Nanowire Arrays

Micro and Nanosystems ◽

10.2174/1876402911204040333 ◽

2012 ◽

Vol 4 (4) ◽

pp. 333-338 ◽

Cited By ~ 3

Author(s):

Yujia Zhai ◽

Marylene Palard ◽

Leo Mathew ◽

Muhammad Mustafa Hussain ◽

C. Grant Willson ◽

...

Keyword(s):

Single Crystal ◽

Silicon Nanowire ◽

Three Dimensional ◽

Single Crystal Silicon ◽

Nanowire Arrays ◽

Crystal Silicon ◽

Silicon Nanowire Arrays

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Applicability of the three-dimensional Alexander-Haasen model for the analysis of dislocation distributions in single-crystal silicon

Journal of Crystal Growth ◽

10.1016/j.jcrysgro.2014.11.011 ◽

2015 ◽

Vol 411 ◽

pp. 49-55 ◽

Cited By ~ 7

Author(s):

B. Gao ◽

K. Jiptner ◽

S. Nakano ◽

H. Harada ◽

Y. Miyamura ◽

...

Keyword(s):

Single Crystal ◽

Three Dimensional ◽

Single Crystal Silicon ◽

Crystal Silicon

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Analysis of Silicon-On-Insulator Structures Formed By Oxygen Ion Implantation

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100118370 ◽

1985 ◽

Vol 43 ◽

pp. 300-301

Author(s):

N. Lewis ◽

E. L. Hall ◽

A. Mogro-Campero ◽

R. P. Love

Keyword(s):

Ion Implantation ◽

Single Crystal ◽

Single Crystal Silicon ◽

Silicon Layer ◽

Device Fabrication ◽

Silicon On Insulator ◽

High Dose ◽

Crystal Silicon ◽

Oxygen Ion ◽

Oxygen Ion Implantation

The formation of buried oxide structures in single crystal silicon by high-dose oxygen ion implantation has received considerable attention recently for applications in advanced electronic device fabrication. This process is performed in a vacuum, and under the proper implantation conditions results in a silicon-on-insulator (SOI) structure with a top single crystal silicon layer on an amorphous silicon dioxide layer. The top Si layer has the same orientation as the silicon substrate. The quality of the outermost portion of the Si top layer is important in device fabrication since it either can be used directly to build devices, or epitaxial Si may be grown on this layer. Therefore, careful characterization of the results of the ion implantation process is essential.

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