Molecular Recognition by Silicon Nanowire Field-Effect Transistor and Single-Molecule Force Spectroscopy

Silicon nanowire (SiNW) field-effect transistors (FETs) have been developed as very sensitive and label-free biomolecular sensors. The detection principle operating in a SiNW biosensor is indirect. The biomolecules are detected by measuring the changes in the current through the transistor. Those changes are produced by the electrical field created by the biomolecule. Here, we have combined nanolithography, chemical functionalization, electrical measurements and molecular recognition methods to correlate the current measured by the SiNW transistor with the presence of specific molecular recognition events on the surface of the SiNW. Oxidation scanning probe lithography (o-SPL) was applied to fabricate sub-12 nm SiNW field-effect transistors. The devices were applied to detect very small concentrations of proteins (500 pM). Atomic force microscopy (AFM) single-molecule force spectroscopy (SMFS) experiments allowed the identification of the protein adsorption sites on the surface of the nanowire. We detected specific interactions between the biotin-functionalized AFM tip and individual avidin molecules adsorbed to the SiNW. The measurements confirmed that electrical current changes measured by the device were associated with the deposition of avidin molecules.

Logic-in-Memory Inverter Based on a Silicon Nanowire Feedback Field-Effect Transistor

In this paper, we propose a logic-in-memory (LIM) inverter comprising a silicon nanowire (SiNW) n-channel feedback field-effect transistor (n-FBFET) and a SiNW p-channel metal oxide semiconductor field-effect transistor (p-MOSFET). Further, we investigated the hybrid logic and memory operations of the inverter using mixed-mode technology computer-aided design simulations. Our LIM inverter exhibited a high voltage gain of 296.8 (V/V) when transitioning from logic ‘1’ to ‘0’ and 7.9 (V/V) when transitioning from logic ‘0’ to ‘1’, while holding calculated logic at zero input voltage. The energy band diagrams of the n-FBFET structure demonstrated that the holding operation of the inverter was implemented by controlling the positive feedback loop. Moreover, the output logic can remain constant without any supply voltage, resulting in zero static power consumption.

A MOLECULAR DYNAMICS STUDY OF NANOWIRE RESONATOR BIO-OBJECT DETECTION

This paper presents a comprehensive analysis, carried out by the molecular dynamics (MD) simulations, of the vibrations of silicon nanowire (SiNW) resonators, having diverse applications including biological and medical fields. The chosen approach allows us to obtain a better understanding of the nanowire (NW) materials’ characteristics, providing a more detailed insight into the behavior of nanostructures, especially when the topic of interest is relevant to their dynamics, interatomic interactions, and atoms trajectories’ prediction. We first simulate a SiNW to study its frequency of vibrations using MD simulations. Then, we add a molecule of human immunodeficiency virus as an example to investigate the potential of the SiNW resonator for the detection of tiny bio-objects. The developed technique and its application to the detection of tiny objects, such as viruses, are discussed in the context of several key effects pertinent to the design of SiNW.

Performance demonstration of cavity-free planar multi-stage bileg and unileg silicon-nanowire thermoelectric generators.

A Thermoelectric (TE) generator is expected to play an important role in the operation of tiny-watt capable wireless power supply devices by converting the waste heat energy into electrical energy. This work is the demonstration of planar cavity-free multi-stage n-type unileg- and bileg Si-nanowire (Si-NW) TE generators. The result shows that the output power of the multi-stage bileg-TE generator increases linearly with increasing the stage number, whereas the rate of increase of the multi-stage unileg-TE generator power output tends to decrease as the stage number increases. Although the power of the multi-stage bileg-TE generator fabricated in this work was smaller than that of the multi-stage unileg-TE generator due to the large internal resistance of p-type elements, however, the improved linearity of the bileg-TE generator than the unileg-TE generator indicates the potential advantage of the multi-stage bileg-TE generator for the large-scale integration.