Estimation of Ga adatom diffusion length for GaP growth by molecular beam epitaxy

2019 ◽  
Vol 512 ◽  
pp. 37-40 ◽  
Author(s):  
Jose A. Piedra-Lorenzana ◽  
Keisuke Yamane ◽  
Koki Shiota ◽  
Junya Fujimoto ◽  
Shunsuke Tanaka ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Diffusion Length ◽  
Adatom Diffusion

Surface diffusion length of Ga adatoms on (1̄1̄1̄)B surfaces during molecular beam epitaxy

1994 ◽  
Vol 64 (9) ◽  
pp. 1123-1125 ◽  
Author(s):  
Y. Nomura ◽  
Y. Morishita ◽  
S. Goto ◽  
Y. Katayama ◽  
T. Isu
Keyword(s):  
Molecular Beam Epitaxy ◽  
Surface Diffusion ◽  
Molecular Beam ◽  
Diffusion Length

Difference in Diffusion Length of Ga Atoms underAs2andAs4Flux in Molecular Beam Epitaxy

1997 ◽  
Vol 36 (Part 1, No. 9A) ◽  
pp. 5670-5673 ◽  
Author(s):  
Takeyoshi Sugaya ◽  
Tadashi Nakagawa ◽  
Yoshinobu Sugiyama ◽  
Yasuhiko Tanuma ◽  
Kenji Yonei
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Diffusion Length

Separate control of number density and size of ErAs nanoparticles by a modified diffusion length process using two flux conditions during molecular beam epitaxy

2019 ◽  
Vol 692 ◽  
pp. 137586
Author(s):  
Yuanchang Zhang ◽  
Kurt G. Eyink ◽  
Madelyn Hill ◽  
Brittany Urwin ◽  
Krishnamurthy Mahalingam
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Diffusion Length ◽  
Number Density ◽  
Separate Control

Minority carrier lifetime and diffusion length in HgTe/CdTe superlattices by molecular beam epitaxy

1992 ◽  
Vol 61 (10) ◽  
pp. 1196-1198 ◽  
Author(s):  
S. H. Shin ◽  
J. M. Arias ◽  
M. Zandian ◽  
J. G. Pasko ◽  
J. Bajaj ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Diffusion Length ◽  
Minority Carrier Lifetime ◽  
And Diffusion

Facet Formation of Lineshaped Silicon Mesas Grown with Micro Shadow Masks

1994 ◽  
Vol 351 ◽  
Author(s):  
H. Gossner ◽  
G. Fehlauer ◽  
W. Kiunke ◽  
I. Eisele ◽  
M. Stolz ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Epitaxial Growth ◽  
Molecular Beam ◽  
Three Dimensional ◽  
Temperature Dependent ◽  
Adatom Diffusion ◽  
Substrate Side ◽  
Side Walls ◽  
Dimensional Growth ◽  
Facet Formation

ABSTRACTAs reported previously, perfect facets can be achieved at the side walls of submicron silicon mesa structures grown by molecular beam epitaxy (MBE) with micro shadow masks [1]. An essentially self organizing, three-dimensional growth was observed. In this paper we present the results of the epitaxial growth on (001) substrates using long (≥ 1μm), lineshaped mask apertures, which put constraints on the formation of facets. At a growth temperature of 500°C {111} facet formation is observed for lineshaped mesas oriented along the <110> direction of the substrate. Side walls with a length of I μm are perfectly plane, while mesas with a length of 10 μm and more show rough sidewalls. This is explained by a limited silicon adatom diffusion on the facet. For higher flux rates the facet formation is suppressed. This can be understood in terms of a reduced adatom diffusion.A crossover from {111} to {113} facet formation is observed at growth temperatures above 500°C. A model for the temperature dependent formation of {111} and {113} facets is given.

AFM Study of Film Growth Kinetics in Heteroepitaxy

1992 ◽  
Vol 263 ◽  
Author(s):  
William M. Tong ◽  
Eric J. Snyder ◽  
R. Stanley Williams ◽  
Akihisa Yanase ◽  
Yusaburo Segawa ◽  
...  
Keyword(s):  
Thin Films ◽  
Correlation Function ◽  
Molecular Beam Epitaxy ◽  
Kinetic Parameter ◽  
Molecular Beam ◽  
Diffusion Length ◽  
Film Growth ◽  
Growth Theory ◽  
Atomic Force ◽  
Substrate Temperatures

ABSTRACTThe growth of CuCl/CaF2 heterostructures has been studied with an atomic force microscope (AFM). We have grown by molecular beam epitaxy (MBE) CuCl thin films at various substrate temperatures and thicknesses on CaF2(111) substrates. AFM studies reveal that islanding is the dominant growth mechanism. We calculated the height-height correlation function, 〈lh(qt)|2〉, for each of our films and compared them to the predictions made by the Shadowing Growth Theory, a preexisting growth model that enabled us to extract the important kinetic parameter of surface diffusion length for the growth condition of each of the four films.

scholarly journals Si Incorporation in InP Nanowires Grown by Au-Assisted Molecular Beam Epitaxy

2009 ◽  
Vol 2009 ◽  
pp. 1-7 ◽  
Author(s):  
Lorenzo Rigutti ◽  
Andres De Luna Bugallo ◽  
Maria Tchernycheva ◽  
Gwenole Jacopin ◽  
François H. Julien ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Diffusion Length ◽  
Catalyst Particle ◽  
Dopant Distribution ◽  
Dopant Incorporation ◽  
Nanowire Surface ◽  
Si Doped ◽  
The Mean ◽  
Direct Incorporation

We report on the growth, structural characterization, and conductivity studies of Si-doped InP nanowires grown by Au-assisted molecular beam epitaxy. It is shown that Si doping reduces the mean diffusion length of adatoms on the lateral nanowire surface and consequently reduces the nanowire growth rate and promotes lateral growth. A resistivity as low as5.1±0.3×10−5 Ω⋅cm is measured for highly doped nanowires. Two dopant incorporation mechanisms are discussed: incorporation via catalyst particle and direct incorporation on the nanowire sidewalls. The first mechanism is shown to be less efficient than the second one, resulting in inhomogeneous radial dopant distribution.

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