Reducing dielectric loss in Na0.5Bi0.5TiO3 based high temperature capacitor material

A high-temperature poly (m-phenyleneisophthalamide) (PMIA) dielectric composite was successfully manufactured with functionalized BN (fBN) fillers. Due to effective modification by KH-550, fBN particles evenly dispersed in PMIA matrix. The dielectric property, breakdown strength and thermal conductivity of PMIA/fBN dielectric composite were researched. The consequences indicate that fBN fillers can not only decrease the dielectric loss but also enhance the breakdown strength of PMIA/fBN dielectric composites. Furthermore, owing to the generated heat transfer pathways by fBN particles, the thermal conductivities improved from 0.23 W·m-1·K-1 of fBN-0 to 0.86 W·m-1·K-1 of fBN-30, demonstrating a significant improvement. These results present a novel method for fabricating high-temperature PMIA/fBN dielectric composites with improved breakdown strength and thermal conductivity.

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Suppression of high-temperature dielectric loss by designed thermal annealing treatment in (Bi1/2Na1/2)TiO3 ceramics

Journal of the European Ceramic Society ◽

10.1016/j.jeurceramsoc.2021.12.029 ◽

2021 ◽

Author(s):

Ju-Hyeon Lee ◽

Geon-Ju Lee ◽

An-Phuc Hoang ◽

Till Frömling ◽

Thuy-Linh Pham ◽

...

Keyword(s):

High Temperature ◽

Dielectric Loss ◽

Thermal Annealing ◽

Annealing Treatment ◽

Thermal Annealing Treatment

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Reduced Dielectric Loss and Strain Hysteresis in Fe and Mn Comodified High-Temperature BiScO3 -PbTiO3 Ceramics

Journal of the American Ceramic Society ◽

10.1111/jace.13224 ◽

2014 ◽

Vol 97 (12) ◽

pp. 3890-3896 ◽

Cited By ~ 25

Author(s):

Jianguo Chen ◽

Guoxi Jin ◽

Chun-Ming Wang ◽

Jinrong Cheng

Keyword(s):

High Temperature ◽

Dielectric Loss ◽

Fe And Mn ◽

Pbtio3 Ceramics

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Study of Polyimide Films as Passivation for High Temperature High Voltage Silicon Carbide Devices

Materials Science Forum ◽

10.4028/www.scientific.net/msf.556-557.671 ◽

2007 ◽

Vol 556-557 ◽

pp. 671-674 ◽

Cited By ~ 1

Author(s):

Sombel Diaham ◽

Marie Laure Locatelli ◽

Thierry Lebey

Keyword(s):

Silicon Carbide ◽

Dielectric Constant ◽

High Temperature ◽

Dielectric Loss ◽

Loss Factor ◽

Electrical Behavior ◽

Power Devices ◽

Polyimide Films ◽

Temperature Operating ◽

Conduction Properties

Characterizations of Al/Polyimide/Al capacitors in a temperature range extended up to 400°C are presented. The aim is to determine the retained BPDA/PPD polyimide (PI) intrinsic dielectric and conduction properties, as a first stage in the evaluation of its ability to be applied as a passivation material for high temperature operating silicon carbide power devices. The dielectric constant, dielectric loss factor, and the static leakage current of the “as-prepared” Al/PI/Al structures are strongly affected above 175°C, reaching critical values at 400°C with regard to the aimed application. However, an evolution of these characteristics after the sample exposure at high temperature is observed, resulting in a very good and stabilized electrical behavior even at 400°C.

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